太赫兹真空电子器件微加工技术及后处理方法
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摘要
太赫兹频段真空电子器件的尺寸很小,其加工精度和表面质量要求很高,需要采用微加工技术及其一些特殊的加工工艺。本文主要介绍了几种常用于制作太赫兹真空电子器件的微加工方法,主要讨论了微机械加工、微细电火花加工、LIG-A/UV-LIGA和DRIE等加工技术的特点及适用范围。为了提高器件的表面质量,讨论了清洗、净化及表面化学抛光技术等后处理技术。此外,太赫兹器件的设计结构特征也会限制微加工技术的选择,由此文中分析了几种常见太赫兹真空器件的特点及其可采用的加工方法和工艺。
The latest development in the micro-fabrication and post-processing technologies of the terahertz vacuum electronic device(TVEDs) was tentatively reviewed in a thought provoking way.The discussions with specific examples focused on the strengths and weaknesses and applications of a variety of the widely used,state-of-the-art micro-fabrication methods and tools,such as the micromachining,micro-electric discharge machining(μEDM),lithographie galanoformung,abformung(LIGA)/ultraviolet(UV)-LIGA,and deep reactive ion etching.In addition,the impacts of the major post-processing technologies,including rinsing,cleaning,and chemical polishing of surfaces,on the surface properties of the TVEDs,was also briefly discussed.
The latest development in the micro-fabrication and post-processing technologies of the terahertz vacuum electronic device(TVEDs) was tentatively reviewed in a thought provoking way.The discussions with specific examples focused on the strengths and weaknesses and applications of a variety of the widely used,state-of-the-art micro-fabrication methods and tools,such as the micromachining,micro-electric discharge machining(μEDM),lithographie galanoformung,abformung(LIGA)/ultraviolet(UV)-LIGA,and deep reactive ion etching.In addition,the impacts of the major post-processing technologies,including rinsing,cleaning,and chemical polishing of surfaces,on the surface properties of the TVEDs,was also briefly discussed.
引文
[1]刘盛纲,钟任斌.太赫兹科学技术及其应用的新发展[J].电子科技大学学报,2009,38(5):481-486.
[2]Siegel P H.Terahertz Technology[J].IEEE Transaction onMicrowave Theory and Techniques,2002,50(3):910-928
[3]张建.序言——加强太赫兹科学技术基础和应用研究[J].信息与电子工程,2011,9(3)
[4]Booske J H,Dobbs R J,Joye C D,et al.Vacuum ElectronicHigh Power Terahertz Sources[J].IEEE Trans on TerahertzScience and Technology,2011,(1):54-75
[5]王光强,范如玉,童长江,等.0.14THz高功率脉冲半导体探测器的分析与设计[J].应用物理,2010,(3):256-261
[6]Booske J H.Plasma Physics and Related Challenges of Mi-llimeter-Wave-to-Terahertz andHigh PowerMicrowave Gener-ation[J].Phys Plasmas,2008,15(5):1-16
[7]Booske J H,Barker R J.Introduction and Overview[C].Modern Mircrowave and Millimeter-Wave Power Electronics,Piscataway,2005:1-32
[8]廖复疆.真空电子技术(第2版)[M].北京:国防工业出版社,2008
[9]Scheitrum G P.Microfabrication MVEDs[C].Modern Mir-crowave and Millimeter-Wave Power Electronics,Piscataway,2005:343-395
[10]王明红,薛谦忠,刘濮鲲.太赫兹真空电子器件的研究现状及其发展评述[J].电子与信息学报,2008,30(7):1766-1772
[11]徐捷.采用光子晶体的行波管慢波结构高频特性研究[J].真空科学与技术学报,2011,31(6):721-727
[12]Ives R L.Microfabrication ofHigh-Frequency Vacuum Elec-tron Devices[J].IEEE Transactions on Plasma Science,2004,32(3):1277-1291
[13]程焰林,向伟,王远.太赫兹微型电真空器件及其制造工艺[J].真空电子技术,2011,(3):43-48
[14]Pengvanich P,Chernin D,Lau Y Y,et al.Effect of RandomCircuit Fabrication Errors on Smal-l Signal Gain and Phase inTraveling-Wave Tubes[J].IEEE Trans on Electron De-vices,2008,55(3):916-924
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[16]Shin Y M,Barnett L R,Luhmann Jr N C.MEMS-FabricatedMicro Vacuum Electron Devices(μVEDs)for Terahertz(THz)Applications[C].Proc IRMMW-THz Conf,2008
[17]Korovin S D,Mesyats G A,Pegel I V,et al.Pulsewidth Lim-itation in the Relativistic Backward Wave Oscillator[J].IEEE Trans on Plasma Science,2000,28(3):485-495
[18]王文祥.微波工程技术[M].北京:国防科技出版社,2009:545-573
[19]廖复疆.微型真空电子器件和太赫兹辐射源技术进展[J].电子学报,2003,31(9):1361-1364
[20]Granatstein V L,Nusinovich G S,Barker R J,et al.EmergingApplications and Future Possibilities[C].Modern Mir-crowave and Millimeter-Wave Power Electronics,Piscat-away,2005:765-813
[21]王志勇,吴笑天,袁玉兰.微细切削加工影响因素研究[J].机械制造与自动化,2010,39(6):42-44
[22]周军.铝合金7050-T7451微切削加工机理及表面完整性研究[D].济南:山东大学,2010
[23]石文天,刘玉德,李慎龙.微小型零件的微细切削加工工艺研究[J].组合机床与自动化加工技术,2011,(5):93-97
[24]卢猛.微结构功能表面金刚石超精密加工工艺的研究[D].哈尔滨:哈尔滨工业大学,2007
[25]赖院欣.精密微小零件三维微细切削加工基础研究[D].广州:广东工业大学,2006
[26]TONG CH J,LI Z,WANG J G,et al.Particle Simulation onHigh Power Terahertz Wave Generated by Backward WaveOscillator[C].Proc SPIE,2009,(385)7:101-106
[27]吴振华,张开春,刘盛纲.折叠波导结构的THz振荡辐射源研究[J].电子学报,2009,37(12):2677-2680
[28]陈樟,王亚军.0.14THz折叠波导行波管慢波结构设计与加工[J].信息与电子工程,2011,9(3):299-302
[29]张天鹏.微细电火花加工工艺的基础性研究[D].南京:南京航空航天大学,2006
[30]崔景芝.微细电火花加工的基本规律及其仿真研究[D].哈尔滨:哈尔滨工业大学,2007
[31]杨志伟.微凸起和微坑结构的特种加工成形技术研究[D].南京:南京航空航天大学,2007
[32]刘晋春,白基成,郭永丰.特种加工(第五版)[M].北京:机械工业出版社,2008
[33]Bratman V L,Bandurkin I V,Dumesh B S,et al.Sources ofCoherent Terahertz Radiation[C].High Energy Density andHigh Power RF:7thWorkshop,2006:356-366
[34]Bratman V L,Dumesh B S,Fedotov A E.Terahertz Orotronsand Oromultipliers[J].IEEE Trans on Plasma Science,2010,38(6):1466-1471
[35]邓扬明.基于准LIGA技术制作微齿轮的研究[D].北京:北京工业大学,2005
[36]刘楠.UV-LIGA工艺中若干关键技术的研究[D].哈尔滨:哈尔滨工业大学,2007
[37]黄新龙.若干微电子机械系统研制及相应LIGA工艺研究[D].合肥:中国科学技术大学,2009
[38]Makarova O V,Divan R,Tucek J,et al.Fabrication of SolidCopper220GHzFoldedWaveguide Circuits byUV Lithogra-phy[C].IEEE International Vacuum Electronics Confer-ence:2010:183-184
[39]Tucek J,Basten M,Gallagher D,et al.Sub-Millimeter andTHz Power Amplifier Development at Northrop Grumman[C].IEEE International Vacuum Electronics Conference,2010:19-20
[40]Ives R L,Kory C,Read M,et al.Development of Backward-Wave Oscillators for Terahertz Applications[C].Proc ofSPIE,2003,5070:71-82
[41]Dispenza M,Brunetti F,Cojocaru C S,et al.Towards a THzBackward Wave Amplifier in European OPTHER Project[J].Proc of SPIE,2010:783706-1~7
[42]Brunetti F,Cojocarua C S,de Rossi A,et al.European Re-search on THz Vacuum Amplifiers[C].35th InternationalConference on Infrared,Millimeter,and Terahertz Waves,2010
[43]张开春.太赫兹频段扩展互作用振荡器研究[D].成都:电子科技大学,2009
[44]张开春.太赫兹扩展互作用振荡器的矩形耦合器特性研究[J].电子学报,2011,39(3):632-635
[45]朱泳,闫桂珍,王成伟,等.高深宽比深隔离槽的刻蚀技术研究[J].微纳电子技术,2003,7/8:113-115
[46]杨帆,胡利勤,林贺,等.新型前栅场发射器件的研究[J].真空科学与技术学报,2012,32(3):192-195
[47]孙广毅.高深宽比微纳结构模拟、加工及其应用[D].天津:南开大学,2010
[48]Tucek J,Gallagher D,Kreischer K,et al.A Compact,HighPower,0.65 THz Source[C].IEEE International VacuumElectronics Conference,2008:16-17
[49]Dayton JA,Mearini GT,Kory C L,et al.Assembly and Pre-liminary Testing of the Prototype 650 GHz BWO[C].Proc9th IVEC Conf,2008:394-395
[50]Schuhmann T,Protz J,Fields D,et al.A MEMS FabricationApproach for a 200 GHz Microklystron Driven by a Smal-lScaled Pseudospark Elect[J].Proc of SPIE,2010,7873:783705-1-783705-6
[51]Kreischer K E,Tucek J C,Gallagher D A,Mihailovich R E.Operation of a compact,0.65 THz source[C].33rd Interna-tional Conference on Infrared,Millimeter and TerahertzWaves,2008
[52]王新林.飞秒激光烧蚀金属材料特性与微零件制备研究[D].武汉:华中科技大学,2007
[53]So J K,Shin Y M,Jang K H,et al.Experimental Study on0.5 THz Superradiant Smith-Purcell Radiation[J].IEEEInternational Vacuum Electronics Conference,2007
[54]明平美.UV-LIGA微细电火花加工组合制造技术基础研究[D].南京:南京航空航天大学,2006
[55]周永章,丁毅,陈步荣.不锈钢化学抛光工艺研究[J].材料保护,2003,36(8):42-43
[2]Siegel P H.Terahertz Technology[J].IEEE Transaction onMicrowave Theory and Techniques,2002,50(3):910-928
[3]张建.序言——加强太赫兹科学技术基础和应用研究[J].信息与电子工程,2011,9(3)
[4]Booske J H,Dobbs R J,Joye C D,et al.Vacuum ElectronicHigh Power Terahertz Sources[J].IEEE Trans on TerahertzScience and Technology,2011,(1):54-75
[5]王光强,范如玉,童长江,等.0.14THz高功率脉冲半导体探测器的分析与设计[J].应用物理,2010,(3):256-261
[6]Booske J H.Plasma Physics and Related Challenges of Mi-llimeter-Wave-to-Terahertz andHigh PowerMicrowave Gener-ation[J].Phys Plasmas,2008,15(5):1-16
[7]Booske J H,Barker R J.Introduction and Overview[C].Modern Mircrowave and Millimeter-Wave Power Electronics,Piscataway,2005:1-32
[8]廖复疆.真空电子技术(第2版)[M].北京:国防工业出版社,2008
[9]Scheitrum G P.Microfabrication MVEDs[C].Modern Mir-crowave and Millimeter-Wave Power Electronics,Piscataway,2005:343-395
[10]王明红,薛谦忠,刘濮鲲.太赫兹真空电子器件的研究现状及其发展评述[J].电子与信息学报,2008,30(7):1766-1772
[11]徐捷.采用光子晶体的行波管慢波结构高频特性研究[J].真空科学与技术学报,2011,31(6):721-727
[12]Ives R L.Microfabrication ofHigh-Frequency Vacuum Elec-tron Devices[J].IEEE Transactions on Plasma Science,2004,32(3):1277-1291
[13]程焰林,向伟,王远.太赫兹微型电真空器件及其制造工艺[J].真空电子技术,2011,(3):43-48
[14]Pengvanich P,Chernin D,Lau Y Y,et al.Effect of RandomCircuit Fabrication Errors on Smal-l Signal Gain and Phase inTraveling-Wave Tubes[J].IEEE Trans on Electron De-vices,2008,55(3):916-924
[15]Shin Y M,So J K,Han S T,et al.Microfabrication of Mi-llimeterWave Vacuum Electron Devices by Two-Step Deep-Etch X-Ray Lithography[J].Applied Physics Letters,2006,88(9):091916-1~3
[16]Shin Y M,Barnett L R,Luhmann Jr N C.MEMS-FabricatedMicro Vacuum Electron Devices(μVEDs)for Terahertz(THz)Applications[C].Proc IRMMW-THz Conf,2008
[17]Korovin S D,Mesyats G A,Pegel I V,et al.Pulsewidth Lim-itation in the Relativistic Backward Wave Oscillator[J].IEEE Trans on Plasma Science,2000,28(3):485-495
[18]王文祥.微波工程技术[M].北京:国防科技出版社,2009:545-573
[19]廖复疆.微型真空电子器件和太赫兹辐射源技术进展[J].电子学报,2003,31(9):1361-1364
[20]Granatstein V L,Nusinovich G S,Barker R J,et al.EmergingApplications and Future Possibilities[C].Modern Mir-crowave and Millimeter-Wave Power Electronics,Piscat-away,2005:765-813
[21]王志勇,吴笑天,袁玉兰.微细切削加工影响因素研究[J].机械制造与自动化,2010,39(6):42-44
[22]周军.铝合金7050-T7451微切削加工机理及表面完整性研究[D].济南:山东大学,2010
[23]石文天,刘玉德,李慎龙.微小型零件的微细切削加工工艺研究[J].组合机床与自动化加工技术,2011,(5):93-97
[24]卢猛.微结构功能表面金刚石超精密加工工艺的研究[D].哈尔滨:哈尔滨工业大学,2007
[25]赖院欣.精密微小零件三维微细切削加工基础研究[D].广州:广东工业大学,2006
[26]TONG CH J,LI Z,WANG J G,et al.Particle Simulation onHigh Power Terahertz Wave Generated by Backward WaveOscillator[C].Proc SPIE,2009,(385)7:101-106
[27]吴振华,张开春,刘盛纲.折叠波导结构的THz振荡辐射源研究[J].电子学报,2009,37(12):2677-2680
[28]陈樟,王亚军.0.14THz折叠波导行波管慢波结构设计与加工[J].信息与电子工程,2011,9(3):299-302
[29]张天鹏.微细电火花加工工艺的基础性研究[D].南京:南京航空航天大学,2006
[30]崔景芝.微细电火花加工的基本规律及其仿真研究[D].哈尔滨:哈尔滨工业大学,2007
[31]杨志伟.微凸起和微坑结构的特种加工成形技术研究[D].南京:南京航空航天大学,2007
[32]刘晋春,白基成,郭永丰.特种加工(第五版)[M].北京:机械工业出版社,2008
[33]Bratman V L,Bandurkin I V,Dumesh B S,et al.Sources ofCoherent Terahertz Radiation[C].High Energy Density andHigh Power RF:7thWorkshop,2006:356-366
[34]Bratman V L,Dumesh B S,Fedotov A E.Terahertz Orotronsand Oromultipliers[J].IEEE Trans on Plasma Science,2010,38(6):1466-1471
[35]邓扬明.基于准LIGA技术制作微齿轮的研究[D].北京:北京工业大学,2005
[36]刘楠.UV-LIGA工艺中若干关键技术的研究[D].哈尔滨:哈尔滨工业大学,2007
[37]黄新龙.若干微电子机械系统研制及相应LIGA工艺研究[D].合肥:中国科学技术大学,2009
[38]Makarova O V,Divan R,Tucek J,et al.Fabrication of SolidCopper220GHzFoldedWaveguide Circuits byUV Lithogra-phy[C].IEEE International Vacuum Electronics Confer-ence:2010:183-184
[39]Tucek J,Basten M,Gallagher D,et al.Sub-Millimeter andTHz Power Amplifier Development at Northrop Grumman[C].IEEE International Vacuum Electronics Conference,2010:19-20
[40]Ives R L,Kory C,Read M,et al.Development of Backward-Wave Oscillators for Terahertz Applications[C].Proc ofSPIE,2003,5070:71-82
[41]Dispenza M,Brunetti F,Cojocaru C S,et al.Towards a THzBackward Wave Amplifier in European OPTHER Project[J].Proc of SPIE,2010:783706-1~7
[42]Brunetti F,Cojocarua C S,de Rossi A,et al.European Re-search on THz Vacuum Amplifiers[C].35th InternationalConference on Infrared,Millimeter,and Terahertz Waves,2010
[43]张开春.太赫兹频段扩展互作用振荡器研究[D].成都:电子科技大学,2009
[44]张开春.太赫兹扩展互作用振荡器的矩形耦合器特性研究[J].电子学报,2011,39(3):632-635
[45]朱泳,闫桂珍,王成伟,等.高深宽比深隔离槽的刻蚀技术研究[J].微纳电子技术,2003,7/8:113-115
[46]杨帆,胡利勤,林贺,等.新型前栅场发射器件的研究[J].真空科学与技术学报,2012,32(3):192-195
[47]孙广毅.高深宽比微纳结构模拟、加工及其应用[D].天津:南开大学,2010
[48]Tucek J,Gallagher D,Kreischer K,et al.A Compact,HighPower,0.65 THz Source[C].IEEE International VacuumElectronics Conference,2008:16-17
[49]Dayton JA,Mearini GT,Kory C L,et al.Assembly and Pre-liminary Testing of the Prototype 650 GHz BWO[C].Proc9th IVEC Conf,2008:394-395
[50]Schuhmann T,Protz J,Fields D,et al.A MEMS FabricationApproach for a 200 GHz Microklystron Driven by a Smal-lScaled Pseudospark Elect[J].Proc of SPIE,2010,7873:783705-1-783705-6
[51]Kreischer K E,Tucek J C,Gallagher D A,Mihailovich R E.Operation of a compact,0.65 THz source[C].33rd Interna-tional Conference on Infrared,Millimeter and TerahertzWaves,2008
[52]王新林.飞秒激光烧蚀金属材料特性与微零件制备研究[D].武汉:华中科技大学,2007
[53]So J K,Shin Y M,Jang K H,et al.Experimental Study on0.5 THz Superradiant Smith-Purcell Radiation[J].IEEEInternational Vacuum Electronics Conference,2007
[54]明平美.UV-LIGA微细电火花加工组合制造技术基础研究[D].南京:南京航空航天大学,2006
[55]周永章,丁毅,陈步荣.不锈钢化学抛光工艺研究[J].材料保护,2003,36(8):42-43