一种适用于GaN器件的谐振驱动电路
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摘要
针对氮化镓(GaN)器件,传统的驱动电路是电压源型驱动,在高频下充放电回路中的寄生电感会引起栅源电压振荡,超过GaN器件的栅源耐压值,损坏GaN器件。采用谐振驱动(RGD)电路是解决上述传统驱动存在的问题的有效途径之一,利用LC谐振,在GaN器件开通和关断时提供一条低阻抗箝位路径,减小栅源电压的振荡,提供一个稳定的栅源电压。详细分析了RGD电路的工作原理,同时设计制作了1 MHz的Boost变换器原理样机,并给出了实验结果。
GaN devices are traditionally driven by the voltage source circuit,and could be easily damaged when the gate-source voltage of GaN device oscillates and exceeds the maximum withstanding voltage owing to the parasitic inductance in charge and discharge circuit under high-frequency operation. RGD(Resonant Gate Driver) circuit represents an effective approach to solve the problem of oscillation of the gate-source voltage. A low impedance clamped path can be obtained using LC resonance when GaN devices are turned on and off,which can reduce the oscillation of gate voltage and provide a stable gate voltage. The working principle of RGD circuit is described in detail. Meanwhile,a prototype of 1 MHz Boost converter is designed and the experimental results are provided.
GaN devices are traditionally driven by the voltage source circuit,and could be easily damaged when the gate-source voltage of GaN device oscillates and exceeds the maximum withstanding voltage owing to the parasitic inductance in charge and discharge circuit under high-frequency operation. RGD(Resonant Gate Driver) circuit represents an effective approach to solve the problem of oscillation of the gate-source voltage. A low impedance clamped path can be obtained using LC resonance when GaN devices are turned on and off,which can reduce the oscillation of gate voltage and provide a stable gate voltage. The working principle of RGD circuit is described in detail. Meanwhile,a prototype of 1 MHz Boost converter is designed and the experimental results are provided.
引文
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[14] 周岩,张俊波,陈麒米. 开关变换器功率电感磁损建模及应用[J]. 电力自动化设备,2017,37(11):132-137.ZHOU Yan,ZHANG Junbo,CHEN Qimi. Modeling and application of core losses for power inductor in switching converter[J]. Electric Power Automation Equipment,2017,37(11):132-137.
[2] YAN Y,MARTINEZ-PEREZ A,CASTELLAZZI A. High-frequency resonant gate driver for GaN HEMTs[C]//IEEE Control and Mo-deling for Power Electronics.Vancouver,BC,Canada:IEEE,2015:1-6.
[3] MAHESH M S,TSUNEO K,NORIYUKI T. An efficient resonant gate-drive scheme for high-frequency applications[J]. IEEE Tran-sactions on Industry Applications,2012,48(4):1418-1431.
[4] VRIES I D D. A resonant power MOSFET/IGBT gate driver [C]//Applied Power Electronics Conference and Exposition. Dallas,TX,USA:IEEE,2002:179-185.
[5] 刘丽,马瑜,谢小高,等. 高频谐振门极驱动电路的研究[J]. 电力电子技术,2007,41(11):41-43.LIU Li,MA Yu,XIE Xiaogao,et al. Study of high frequency resonant gate drives[J]. Power Electrontic,2007,41(11):41-43.
[6] SPIAZZI G,MATTAVELLI P,ROSSETTO L. Design considerations and comparison between two high-frequency resonant drivers for synchronous rectification MOSFETs[C]//Applied Power Electronics Conference and Exposition. Anaheim,CA,USA:IEEE,2007:1644-1650.
[7] 沈刚,王华民. 利用附加电感实现高频功率MOSFET谐振栅极驱动[J]. 电气传动,2005,35(1):28-30.SHEN Gang,WANG Huamin. Implement of resonant gate drive for high frequency power MOSFET with additional inductor[J]. Electric Drive,2005,35(1):28-30.
[8] PHILIP A,NEVILLE M,DERRICK H. A first approach to a design method for resonant gate driver architectures[J]. IEEE Transactions on Power Electronics,2012,27(8):3855-3868.
[9] CHEN Yuhui,FRED C L,LUCA A,et al. A resonant MOSFET gate driver with complete energy recovery[C]//Power Electronics and Motion Control Conference. Beijing,China:IEEE,2000:402-406.
[10] MASAYUKI O,TAKAHARU I,HIROAKI Y,et al. Resonant gate driver for a normally on GaN HEMT[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics,2016,4(3):926-934.
[11] CHEN Yuhui,FRED C L,LUCA A,et al. A resonant MOSFET gate driver with efficient energy recovery[J]. IEEE Transactions on Power Electronics,2004,19(2):470-477.
[12] PATRICK D,DARA O S,MICHAEL G E. An assessment of resonant gate drive techniques for use in modem low power DC-DC converters[C]//Applied Power Electronics Conference and Exposition. Austin,TX,USA:IEEE,2005:1572-1580.
[13] LONG Yu,ZHANG Weimin,BENJAMIN B,et al. A 10-MHz resonant gate driver design for LLC resonant DC-DC converters using GaN devices[C]//Applied Power Electronics Conference and Exposition. Fort Worth,TX,USA:IEEE,2014:2093-2097.
[14] 周岩,张俊波,陈麒米. 开关变换器功率电感磁损建模及应用[J]. 电力自动化设备,2017,37(11):132-137.ZHOU Yan,ZHANG Junbo,CHEN Qimi. Modeling and application of core losses for power inductor in switching converter[J]. Electric Power Automation Equipment,2017,37(11):132-137.