镁与锂共掺杂氧化锌纳米薄膜的结构与特性研究
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摘要
以溶胶凝胶法成长了锂与镁共掺杂氧化锌纳米薄膜,并且探讨了锂掺杂与镁掺杂对薄膜结构、光学特性及电性质的影响。结果发现,锂掺杂量增加时XRD的2θ值向低角度偏移,VO缺陷随锂掺杂量增加而变大,进而使薄膜内含氧量降低且呈富锌(Zn-rich)态。在富锌状态下Lii缺陷增加,进而使得电子浓度增大。镁掺杂能降低,VO缺陷形成,使薄膜内含氧量提高而转向富氧(O-rich)态,在偏富氧态下Lii缺陷形成几率降低,LiZn缺陷形成几率增大。锂掺杂氧化锌薄膜的导电型态为n型,再掺杂镁时则能提升含氧量而抑制施体型缺陷的形成,得到Li_(0.008)Zn_(0.933)Mg_(0.059)O薄膜呈p型导电型态。
Li and Mg co-doped ZnO nano-film was prepared by sol-gel method and the influences of Li and Mg co-doping on structure,optical property,and electrical property of these films were discussed. Results showed that the 2θ of XRD gradually moved to low angle with Li doping content increasing.The VOdefect became more with Li doping content increasing and then the oxygen content in films decreased,and it led to the film be Zn-rich.The Liidefect became more and then the electron concentration also increased in the state of Zn-rich.Mg doping could inhibit the growth of VOdefect and might increase the oxygen content,and it led to the film be O-rich.The formation of Liidefects decreased and the formation of LiZndefects increased in the state of O-rich.The conductive type of Li doped ZnO film was n type,and then Mg doping in ZnO film could increase the oxygen content and inhibit the growth of donor defects.The conductive type of Li_(0.008)Zn_(0.933)Mg_(0.059)O film was p type obtained in the experiment.
Li and Mg co-doped ZnO nano-film was prepared by sol-gel method and the influences of Li and Mg co-doping on structure,optical property,and electrical property of these films were discussed. Results showed that the 2θ of XRD gradually moved to low angle with Li doping content increasing.The VOdefect became more with Li doping content increasing and then the oxygen content in films decreased,and it led to the film be Zn-rich.The Liidefect became more and then the electron concentration also increased in the state of Zn-rich.Mg doping could inhibit the growth of VOdefect and might increase the oxygen content,and it led to the film be O-rich.The formation of Liidefects decreased and the formation of LiZndefects increased in the state of O-rich.The conductive type of Li doped ZnO film was n type,and then Mg doping in ZnO film could increase the oxygen content and inhibit the growth of donor defects.The conductive type of Li_(0.008)Zn_(0.933)Mg_(0.059)O film was p type obtained in the experiment.
引文
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[13]Duan X Y,Yao R H,Zhao Y J.The mechanism of Li,N dual-acceptor co-doped p-type Zn O[J].Applied Physics A,2008,91(3):467-472.
[2]Ajili M,CastagnéM,Turki N K.Study on the doping effect of Sndoped Zn O thin films[J].Superlattices&Microstructures,2013,53(1):213-222.
[3]Lin Y J,Tsai C L.Changes in surface band bending,surface work function,and sheet resistance of undoped Zn O films due to(NH4)2Sx treatment[J].Journal of Applied Physics,2006,100(11):113721.
[4]Ren S X,Sun G W,Zhao J,et al.Electric field-induced magnetic swiching in Mn:Zn O film[J].Applied Physics Letters,2014,104(23):232406.
[5]才红.铁掺杂氧化锌制备及对有机染料的光催化降解[J].无机盐工业,2014,46(12):71-74.
[6]Carvalho A,Alkauskas A,Pasquarello A,et al.Li-related defects in Zn O:Hybrid functional calculations[J].Physica B Condensed Matter,2009,404(23/24):4797-4799.
[7]Lu J G,Zhang Y Z,Ye Z Z,et al.Control of p-and n-type conductivities in Li-doped Zn O thin films[J].Applied Physics Letters,2006,89(11):112113.
[8]Lin Y J,Wu P H,Tsai C L,et al.Mechanisms of enhancing bandedge luminescence of Zn1-xMgxO prepared by the sol-gel method[J].Journal of Physics D:Applied Physics,2008,41(12):125103.
[9]Babikier M,Li Q,Wang J,et al.Li doped Zn O thin film:effect of substrate temperature on structure,optical and electrical properties[J].Optical&Quantum Electronics,2015,47(12):3655-3665.
[10]An H R,Ahn H J,Park J W.High-quality,conductive,and transparent Ga-doped Zn O films grown by atmospheric-pressure chemical-vapor deposition[J].Ceramics International,2015,41(2):2253-2259.
[11]Maniv S,Westwood W D,Colombini E.Pressure and angle of incidence effects in reactive planar magnetron sputtered Zn O layers[J].Journal of Vacuum Science&Technology,1982,20(2):162-170.
[12]Yadav H K,Sreenivas K,Katiyar R S,et al.Defect induced activation of Raman silent modes in rf co-sputtered Mn doped Zn O thin films[J].Journal of Physics D Applied Physics,2007,40(19):6005.
[13]Duan X Y,Yao R H,Zhao Y J.The mechanism of Li,N dual-acceptor co-doped p-type Zn O[J].Applied Physics A,2008,91(3):467-472.