Effect of substrate type on Ni self-assembly process
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摘要
Ni self-assembly has been performed on Ga N(0001), Si(111) and sapphire(0001) substrates. Scanning electron microscopy(SEM) images verify that the Si(111) substrate leads to failure of the Ni assembly due to Si–N interlayer formation; the GaN(0001) and sapphire(0001) substrates promote assembly of the Ni particles. This indicates that the GaN/sapphire(0001) substrates are fit for Ni self-assembly. For the Ni assembly process on Ga N/sapphire(0001) substrates,three differences are observed from the x-ray diffraction(XRD) patterns:(i) Ni self-assembly on the sapphire(0001) needs a 900?C annealing temperature, lower than that on the GaN(0001) at 1000?C, and loses the Ni network structure stage;(ii) the Ni particle shape is spherical for the sapphire(0001) substrate, and truncated-cone for the GaN(0001) substrate; and(iii) a Ni–N interlayer forms between the Ni particles and the GaN(0001) substrate, but an interlayer does not appear for the sapphire(0001) substrate. All these differences are attributed to the interaction between the Ni and the Ga N/sapphire(0001) substrates. A model is introduced to explain this mechanism.
Ni self-assembly has been performed on Ga N(0001), Si(111) and sapphire(0001) substrates. Scanning electron microscopy(SEM) images verify that the Si(111) substrate leads to failure of the Ni assembly due to Si–N interlayer formation; the GaN(0001) and sapphire(0001) substrates promote assembly of the Ni particles. This indicates that the GaN/sapphire(0001) substrates are fit for Ni self-assembly. For the Ni assembly process on Ga N/sapphire(0001) substrates,three differences are observed from the x-ray diffraction(XRD) patterns:(i) Ni self-assembly on the sapphire(0001) needs a 900?C annealing temperature, lower than that on the GaN(0001) at 1000?C, and loses the Ni network structure stage;(ii) the Ni particle shape is spherical for the sapphire(0001) substrate, and truncated-cone for the GaN(0001) substrate; and(iii) a Ni–N interlayer forms between the Ni particles and the GaN(0001) substrate, but an interlayer does not appear for the sapphire(0001) substrate. All these differences are attributed to the interaction between the Ni and the Ga N/sapphire(0001) substrates. A model is introduced to explain this mechanism.
Ni self-assembly has been performed on Ga N(0001), Si(111) and sapphire(0001) substrates. Scanning electron microscopy(SEM) images verify that the Si(111) substrate leads to failure of the Ni assembly due to Si–N interlayer formation; the GaN(0001) and sapphire(0001) substrates promote assembly of the Ni particles. This indicates that the GaN/sapphire(0001) substrates are fit for Ni self-assembly. For the Ni assembly process on Ga N/sapphire(0001) substrates,three differences are observed from the x-ray diffraction(XRD) patterns:(i) Ni self-assembly on the sapphire(0001) needs a 900?C annealing temperature, lower than that on the GaN(0001) at 1000?C, and loses the Ni network structure stage;(ii) the Ni particle shape is spherical for the sapphire(0001) substrate, and truncated-cone for the GaN(0001) substrate; and(iii) a Ni–N interlayer forms between the Ni particles and the GaN(0001) substrate, but an interlayer does not appear for the sapphire(0001) substrate. All these differences are attributed to the interaction between the Ni and the Ga N/sapphire(0001) substrates. A model is introduced to explain this mechanism.
引文
[1]Chiu C H,Lu T C,Huang H W,Lai C F,Kao C C,Chu J T,Yu C C,Kuo H C,Wang S C,Lin C F and Hsueh T H 2007 Nanotechnology 18445201
[2]Yang G F,Xie F,Tong Y Y,Chen P,Yu Z G,Yan D W,Xue J J,Zhu HX,Guo Y,Li G H and Gao S M 2015 Mat.Sci.Semicon.Proc.30 694
[3]Zhao S M and Zhuang P 2014 Chin.Phys.B 23 054203
[4]Henley S J and Carey J D 2005 Phys.Rev.B 72 195408
[5]Facsko S,Dekorsy T,Koerdt C,Trappe C,Kurz H,Vogt A and Hartnagel H L 1999 Science 285 1551
[6]Oh Y J,Ross C A,Jung Y S,Wang Y and Thompson C V 2009 Small5 860
[7]Tiberto P,Gupta S,Bianco S,Celegato F,Martino P,Chiolerio A,Tagliaferro A and Allia P 2011 J.Nanopart.Res.13 245
[8]Aggarwal S,Ogale S B,Ganpule C S,Shinde S R,Novikov V A,Monga A P,Burr M R and Ramesh R 2001 Appl.Phys.Lett.78 1442
[9]Carey J D,Ong L L and Silva S R P 2003 Nanotechnology 14 1223
[10]Chhowalla M,Teo K B K,Ducati C,Rupesinghe N L,Amaratunga GA G,Ferrari A C,Roy D,Robertson J and Milne W I 2001 J.Appl.Phys.90 5308
[11]Yu C C,Chu C F,Tsai J Y,Huang H W,Hsueh T H,Lin C F and Wang S C 2002 Jpn.J.Appl.Phys.41 L910
[12]Kim S I,Lee S R,Ahn K M and Ahn B T 2010 J.Electrochem.Soc.157 H231
[13]Julies B A,Knoesen D,Pretorius R and Adams D 1999 Thin Solid Films 347 201
[14]Diebold U,Pan J M and Madey T E 1995 Surf.Sci.331-333 845
[15]Richardson J T,Scates R and Twigg M V 2003 Appl.Catal.A:Gen.246 137
[16]Detavernier C,Sweet J J and Lavoie C 2008 J.Appl.Phys.103 113526
[2]Yang G F,Xie F,Tong Y Y,Chen P,Yu Z G,Yan D W,Xue J J,Zhu HX,Guo Y,Li G H and Gao S M 2015 Mat.Sci.Semicon.Proc.30 694
[3]Zhao S M and Zhuang P 2014 Chin.Phys.B 23 054203
[4]Henley S J and Carey J D 2005 Phys.Rev.B 72 195408
[5]Facsko S,Dekorsy T,Koerdt C,Trappe C,Kurz H,Vogt A and Hartnagel H L 1999 Science 285 1551
[6]Oh Y J,Ross C A,Jung Y S,Wang Y and Thompson C V 2009 Small5 860
[7]Tiberto P,Gupta S,Bianco S,Celegato F,Martino P,Chiolerio A,Tagliaferro A and Allia P 2011 J.Nanopart.Res.13 245
[8]Aggarwal S,Ogale S B,Ganpule C S,Shinde S R,Novikov V A,Monga A P,Burr M R and Ramesh R 2001 Appl.Phys.Lett.78 1442
[9]Carey J D,Ong L L and Silva S R P 2003 Nanotechnology 14 1223
[10]Chhowalla M,Teo K B K,Ducati C,Rupesinghe N L,Amaratunga GA G,Ferrari A C,Roy D,Robertson J and Milne W I 2001 J.Appl.Phys.90 5308
[11]Yu C C,Chu C F,Tsai J Y,Huang H W,Hsueh T H,Lin C F and Wang S C 2002 Jpn.J.Appl.Phys.41 L910
[12]Kim S I,Lee S R,Ahn K M and Ahn B T 2010 J.Electrochem.Soc.157 H231
[13]Julies B A,Knoesen D,Pretorius R and Adams D 1999 Thin Solid Films 347 201
[14]Diebold U,Pan J M and Madey T E 1995 Surf.Sci.331-333 845
[15]Richardson J T,Scates R and Twigg M V 2003 Appl.Catal.A:Gen.246 137
[16]Detavernier C,Sweet J J and Lavoie C 2008 J.Appl.Phys.103 113526