多孔硅对RDX感度及性能的影响
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  • 英文篇名:Effects of Porous Silicon on Sensitivity and Performances of RDX
  • 作者:胡菲 ; 刘玉存 ; 袁俊明
  • 英文作者:HU Fei;LIU Yucun;YUAN Junming;College of Chemical Engineering and Environment,North University of China;
  • 关键词:多孔硅(PSi) ; RDX ; 感度 ; 爆速 ; DSC
  • 英文关键词:porous silicon;;RDX;;sensitivity;;detonation velocity;;DSC
  • 中文刊名:BPQC
  • 英文刊名:Explosive Materials
  • 机构:中北大学化工与环境学院;
  • 出版日期:2014-04-18 13:37
  • 出版单位:爆破器材
  • 年:2014
  • 期:v.43;No.199
  • 语种:中文;
  • 页:BPQC201402010
  • 页数:4
  • CN:02
  • ISSN:32-1163/TJ
  • 分类号:33-36
摘要
为了研究纳米多孔硅对黑索今(RDX)感度和性能的影响,对其进行热性能、感度、爆速和钢凹深度的测试。结果表明:随着多孔硅的加入,RDX的撞击感度和爆速均有所降低,且随着多孔硅质量分数的增加,撞击感度依次升高而爆速依次降低;当多孔硅的质量分数为1%时,降低了RDX的摩擦感度,但多孔硅质量分数进一步增加时,却提高了RDX的摩擦感度;3%多孔硅的加入可以增加RDX的作功能力。
        In order to study the effect of nano porous silicon on the sensitivity and performances of RDX,thermal performance,sensitivity,detonation velocity and concave depth of steel of RDX containing porous silicon were tested. The results show that the impact sensitivity and the detonation velocity of RDX tend to reduce with the addition of porous silicon. With the increasing content of porous silicon,the impact sensitivity turns to increase,while the detonation velocity decreases successively. When the porous silicon content is 1%,the friction sensitivity of RDX is reduced. But further increase of the porous silicon content leads to the friction sensitivity of RDX improved. The addition of 3% porous silicon contributes to the work capacity of RDX.
引文
[1]黄辉,王泽山,黄亨建,等.新型含能材料的研究进展[J].火炸药学报,2005,28(4):9-13.Huang Hui,Wang Zeshan,Huang Hengjian,et al.Researches and progresses of novel energetic materials[J].Chinese Journal of Explosives and Propellant,2005,28(4):9-13.
    [2]丁景逸.炸药发展动向与添加剂对炸药性能的影响[J].现代兵器,1982(8):50-55.
    [3]郁卫飞,黄辉,聂福德,等.纳米多孔硅复合材料爆炸反应的实验与理论研究[J].含能材料,2004,12(增):476-482.Yu Weifei,Huang Hui,Nie Fude,et al.Experimental and theoretical investigation on explosive phenomena of nano-structure porous silicon composite[J].Chinese Journal of Energetic Materials,2004,12(zl):476-482.
    [4]胡小华,施琼玲,魏锡文,等.多孔硅的表面吸附性能的研究[J].功能材料,2012,21(43):3006-3009.Hu Xiaohua,Shi Qiongling,Wei Xiwen,et al.Theoretical study on the performance of porous silicon explosion[J].Journal of Functional Materials,2012,21(43):3006-3009.
    [5]Plummer A,Cao H,Dawson R,et al.The influence of pore size and oxidising agent on the energetic properties of porous silicon[J].Proceedings of SPIE,2008,7267:72670P1-72670P10.
    [6]薛艳,卢斌,任小明,等.纳米多孔硅含能材料性能研究[J].含能材料,2010,18(5):523-526.Xue Yan,Lu Bin,Ren Xiaoming,et al.Properties of energetic materials based on nano-porous silicon[J].Chinese Journal of Energetic Materials,2010,18(5):523-526.
    [7]Kovalev D,Timoshenko V Yu,Künzner N,et al.Strong explosive interaction of hydrogenated porous silicon with oxygen at cryogenic temperatures[J].Physical Review letters,2001,87(6):068301/1-068301/4.
    [8]Mikulec F V,Kirtland J D,Sailor M J.Explosive nanocrystalline porous silicon and its use in atomic emission spectroscopy[J].Advanced Materials,2002,14(1):38-41.
    [9]黎学明,潘进,杜军,等.化学侵蚀温度对多孔硅粉理化性质的影响[J].重庆大学学报,2003,26(3):39-41.Li Xueming,Pan Jin,Du Jun,et al.Effect of temperature on properties of porous silicon powder in chemical etching process[J].Journal of Chongqing University,2003,26(3):39-41.
    [10]Gronet C M,Lewis N S,Cogan G,et al.n-Type silicon photoelectrochemistry in methanol:design of a10.1%efficient semiconductor/liquid junction solar cell[J].Proceedings of the National Academy of Sciences,1983,80(4):1152-1156.
    [11]Zhang G X.Porous silicon:morphology and formation mechanisms[M]//Vayenas C G,White R E,GamboaAdelco M E.Modern Aspects of Electrochemistry.Springer US,2006:65-133.
    [12]刘玉存,王作山,吕春玲,等.炸药的输出钢凹值与爆压的关系研究[J].华北工学院学报,2001,22(4):304-307.Liu Yucun,Wang Zuoshan,LüChunling,et al.The relation between steel dent date and detonation pressure of explosive sample[J].Journal of North China Institute of Technology,2001,22(4):304-307.
    [13]黄亨建,董海山,花成,等.添加剂的理化性质对RDX撞击感度的影响[C]//2002年材料科学与工程新进展(上).2002年中国材料研讨会论文集,2002:99-1001.

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