旋涂法制备量子点LED功能层材料的研究进展
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摘要
综述了采用旋涂法制备的量子点发光二极管(QLED)中各功能层材料的研究进展,对可旋涂制备的多种载流子注入层和传输层材料的特性及应用进行了对比总结。多项研究表明:对于电子传输层(ETL),ZnO和TiO2等无机金属氧化物材料在电子迁移率及器件可靠性方面都要优于有机材料;对于空穴传输层(HTL),则是具有较高空穴迁移率及成膜质量好的聚[双(4-苯基)(4-丁基苯基)胺](Poly-TPD)、聚(9-乙烯咔唑)(PVK)等有机聚合物材料应用更为广泛;而MoOx和WOx等无机金属氧化物材料则由于其能级匹配和可靠性方面的优势更多用于空穴注入层。随着技术的成熟及QLED应用中对高效率和高可靠性的要求,无机金属氧化物材料在QLED中的应用将越来越广泛,结合成本低廉的旋涂法,将有力地推动QLED的商业化。
The research progress on each functional layer material of quantum dot light emitting diodes(QLEDs)fabricated by the spin-coating method are reviewed.The characteristics and applications of various materials for carrier injection layers and transport layers prepared by spincoating are compared and summarized.Numerous studies show that the inorganic metal oxide materials(ZnO,TiO2,etc)are superior to organic materials in the electron mobility and device reliability as the electron transport layer(ETL),and the organic polymer materials(poly [double(4-phenyl)(4-butyl phenyl)amine](Poly-TPD),poly(9-vinyl carbazole)(PVK),etc)with higher hole mobility and better film quality are more widely used as the hole transport layer(HTL).Moreover,a few inorganic metal oxide materials such as MoOxand WOx,etc are widely used as the hole injection layer due to their better energy level matching and higher reliability.With the technology maturity and the demands of higher efficiency and higher reliability in QLEDs applications,inorganic metal oxide materials prepared by low-cost spin-coating method will become more and more widespread,which will promote the commercialization of QLEDs.
The research progress on each functional layer material of quantum dot light emitting diodes(QLEDs)fabricated by the spin-coating method are reviewed.The characteristics and applications of various materials for carrier injection layers and transport layers prepared by spincoating are compared and summarized.Numerous studies show that the inorganic metal oxide materials(ZnO,TiO2,etc)are superior to organic materials in the electron mobility and device reliability as the electron transport layer(ETL),and the organic polymer materials(poly [double(4-phenyl)(4-butyl phenyl)amine](Poly-TPD),poly(9-vinyl carbazole)(PVK),etc)with higher hole mobility and better film quality are more widely used as the hole transport layer(HTL).Moreover,a few inorganic metal oxide materials such as MoOxand WOx,etc are widely used as the hole injection layer due to their better energy level matching and higher reliability.With the technology maturity and the demands of higher efficiency and higher reliability in QLEDs applications,inorganic metal oxide materials prepared by low-cost spin-coating method will become more and more widespread,which will promote the commercialization of QLEDs.
引文
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[2]DAI X L,ZHANG Z X,JIN Y Z,et al.Solution-processed,high-performance light emitting diodes based on quantum dots[J].Nature,2014,515(7525):96-99.
[3]SHIM J W,ZHOU Y H,FUENTES-HERNANDEZ C,et al.Studies of the optimization of recombination layers for inverted tandem polymer solar cells[J].Solar Energy Materials and Solar Cells,2012,107:51-55.
[4]DONG I S,HONG H K,HWANG D K,et al.Inverted CdSe-ZnS quantum dots light-emitting diode using low-work function organic material polyethylenimine ethoxylated[J].Journal of Materials Chemistry:C,2013,2(3):510-514.
[5]CHO K S,LEE E K,JOO W J,et al.High-performance crosslinked colloidal quantum-dot light-emitting diodes[J].Nature Photonics,2009,3(6):341-345.
[6]QASIM K,CHEN J,LI Z,et al.Highly-improved performance of TiO2 nanocrystal based quantum-dot light emitting diode[J].RSC Advances,2013,3(30):12104-12108.
[7]KOLODZIEJCZAK-RADZIMSKA A,JESIONOWSKI T.Zinc oxide-from synthesis to application:a review[J].Materials,2014,7(4):2833-2881.
[8]PACHOLSKI C,KORNOWSKI A,WELLER H.Self-assembly of ZnO:from nanodots to nanorods[J].Angewandte Chemie International Edition,2002,41(7):1188-1191.
[9]QIAN L,ZHENG Y,XUE J G,et al.Stable and efficient quantum-dot light-emitting diodes based on solution-processed multilayer structures[J].Nature Photonics,2011,5(9):543-548.
[10]CHEN J,LEI W,LI Z,et al.All solution processable of color tunable quantum dot light-emitting diodes[J].SID Symposium Digestof Technical Papers,2015,45(1):1312-1314.
[11]JANG I,KIM J,PARK C J,et al.Study of ethanolamine surface treatment on the metal-oxide electron transport layer in inverted InP quantum dot light-emitting diodes[J].Electronic Materials Letters,2015,11(6):1066-1071.
[12]PAN Y J,CHEN J,HUANG Q Q,et al.Size tunable ZnO nanoparticles to enhance electron Injection in solution processed QLEDs[J].2016,3(2):215-222.
[13]KIM H M,YOUN J H,SEO G J,et al.Inverted quantumdot light-emitting diodes with solution-processed aluminiumzinc oxide as a cathode buffer[J].Journal of Materials Chemistry:C,2013,1(8):1567-1573.
[14]KIM J H,HAN C Y,LEE K H,et al.Performance improvement of quantum dot-light-emitting diodes enabled by an alloyed ZnMgO nanoparticle electron transport layer[J].Chemistry of Materials,2014,27(1):197-204.
[15]KIM H H,PARK S,YI Y,et al.Inverted quantum dot light emitting diodes using polyethylenimine ethoxylated modified ZnO[J].Scientific Reports,2015,5(1):1-5.
[16]HO M D,KIM D,KIM N,et al.Polymer and small molecule mixture for organic hole transport layers in quantum dot light-emitting diodes[J].Applied Materials&Interfaces,2013,5(23):12369-12374.
[17]YANG J,LEE J,LEE J,et al.Mobility enhancement of hole transporting layer in quantum-dot light-emitting diodes incorporating single-walled carbon nanotubes[J].Diamond and Related Materials,2017,73:154-160.
[18]ZHANG X L,DAI H,ZHAO J L,et al.All-solution processed composite hole transport layer for quantum dot light emitting diode[J].Thin Solid Films,2016,603(1):187-192.
[19]SUN Q J,SUBRAMANYAM G,DAI L M,et al.Highly efficient quantum-dot light-emitting diodes with DNA-CTMA as a combined hole-transporting and electron-blocking layer[J].ACS Nano,2009,3(3):737-43.
[20]PARK Y R,DOH J H,SHIN K,et al.Solution-processed quantum dot light-emitting diodes with PANI∶PSS holetransport interlayers[J].Organic Electronics,2015,19(1):131-139.
[21]TAN Z A,ZHANG Y,XIE C,et al.Near-band-edge electroluminescence from heavy-metal-free colloidal quantum dots[J].Advanced Materials,2011,23(31):3553-3558.
[22]CASTAN A,KIM H M,JANG J.All-solution-processed inverted quantum-dot light-emitting diodes[J].ACS Applied Materials&Interfaces,2014,6(4):2508-2515.
[23]HE S J,LI S S,WANG F Z,et al.Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer[J].Nanotechnology,2013,24(17):175201-175207.
[24]KIM J Y,YUSOFF A R B M,JIN J.Quantum-dot light-emitting diode featuring polymeric metal oxide anode buffer layer[J].IEEE Journal of Selected Topics in Quantum Electronics,2014,21(4):17-22.
[25]YANG X Y,MUTLUGUN E,ZHAO Y B,et al.Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes[J].Small,2014,10(2):247-252.
[26]YANG X Y,MA Y Y,MUTLUGUN E,et al.Stable,efficient,and all-solution-processed quantum dot light-emitting diodes with double-sided metal oxide nanoparticle charge transport layers[J].ACS Applied Materials&Interfaces,2014,6(1):495-499.
[27]DING T,YANG X Y,BAI L Y,et al.Colloidal quantum-dot LEDs with a solution-processed copper oxide(CuO)hole injection layer[J].Organic Electronics,2015,26(1):245-250.
[28]ZHANG Y D,WANG S J,CHEN L,et al.Solution-processed quantum dot light-emitting diodes based on NiO nanocrystals hole injection layer[J].Organic Electronics,2017,44(1):189-197.
[29]WANG D Y,WANG I S,HUANG I S,et al.Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer[J].Journal of Physical Chemistry:C,2012,116(18):10181-10185.
[30]BHAUMIK S,PAL A J.Light-emitting diodes based on solution-processed nontoxic quantum dots:oxides as carriertransport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer[J].ACS Applied Materials&Interfaces,2014,6(14):11348-11356.