基于短波通信的射频前端电磁脉冲防护模块仿真与设计
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摘要
随着通信系统面临的电磁工作环境越来越严峻,高功率容量、低插损、快响应时间的电磁脉冲防护模块对其射频前端电路的保护越发的重要起来.本文主要基于PIN二级管射频限幅的原理,构建了PIN二极管的时域等效电路模型,利用去嵌入阻抗场计算方法提取相应电路的S参数,优化设计匹配网络,并采用无源多级PIN二极管结构,设计了一个工作于0~200MHz,插入损耗小于0.15d B,驻波比小于1.4d B,响应时间小于1ns的短波通信电磁脉冲防护模块.结合PIN二极管时域等效电路模型,利用先进设计系统(Advanced Design System,ADS)仿真软件对电磁脉冲防护模块限幅性能进行仿真,并对加工出来的电磁脉冲防护模块进行了测试,结果验证了各项指标满足要求.
With the increasing threat of extremely difficult environment of communication system,the electromagnetic pulse protection module which has the characteristics of high power capacity,high isolation,low insertion loss and fast response time is becoming increasingly important. In this paper,the principle of radio frequency limiting of PIN is studied,and the structure of passive multistage PIN diode is adopted. Through the establishment of its field simulation model,the corresponding S parameters are extracted,and the optimal matching network is optimized. The electromagnetic pulse protection module which works at 0 ～ 200 MHz has insertion loss of less than 0. 15 dB,the voltage standing wave ratio( VSWR) of less than 1. 4,response time of less than 1 ns is designed. Combined with self-built PIN diode model,ADS simulation software is used to simulate the limiting performance of electromagnetic pulse protection module. The result shows that all the indexes meet the requirements.
With the increasing threat of extremely difficult environment of communication system,the electromagnetic pulse protection module which has the characteristics of high power capacity,high isolation,low insertion loss and fast response time is becoming increasingly important. In this paper,the principle of radio frequency limiting of PIN is studied,and the structure of passive multistage PIN diode is adopted. Through the establishment of its field simulation model,the corresponding S parameters are extracted,and the optimal matching network is optimized. The electromagnetic pulse protection module which works at 0 ～ 200 MHz has insertion loss of less than 0. 15 dB,the voltage standing wave ratio( VSWR) of less than 1. 4,response time of less than 1 ns is designed. Combined with self-built PIN diode model,ADS simulation software is used to simulate the limiting performance of electromagnetic pulse protection module. The result shows that all the indexes meet the requirements.
引文
[1]孙国至,刘尚合,陈京平,等.战场电磁环境效应对信息化战争的影响[J].军事运筹与系统工程,2006,20(3):43-47.SUN Guozhi,LIU Shanghe,CHEN Jingping,et al.Influence of battlefield electromagnetic environment effect on Information Warfare[J].Military Operations Research and Systems Engineering,2006,20(3):43-47.(in Chinese)
[2]怀特.微波半导体控制电路[M].王晦光,译.北京:科学出版社,1983.179-183.
[3]刘国靖,刘国至,潘泉,等.高功率微波短脉冲雷达接收机保护装置设计[J].西安电子科技大学学报,2002,29(2):236-240.LIU Guojing,LIU Guozhi,PAN Quan,et al.The fundamental design of HPMshort-pulse radar receiver protectors[J].Journal of Xidian University,2002,29(2):236-240.(in Chinese)
[4]朱长青,刘尚合,魏明.ESD辐射场测试研究[J].电子学报,2005,33(9):1702-1705.ZHU Chang-qing,LIU Shang-he,WEI Ming.A study on test&measurement of the radiated field by ESD[J].Acta Electronica Sinca,2005,33(9):1702-1705.(in Chinese)
[5]陈盘训.半导体器件和集成电路的辐射效应[M].北京:国防工业出版社,2005.328-333.
[6]张忠连.超短波通信系统射频前端电磁防护技术研究[D].成都:电子科技大学,2009.34-39.ZHANG Zhonglian.Study on RF electromagnetic protection technology of ultra short w ave communication system[D].Chengdu:University of Electronic Science and Technology of China,2009.34-39.(in Chinese)
[7]颜克文.短波通信设备电磁防护技术研究[D].成都:电子科技大学,2009.43-51.YAN Ke w en.Research on electromagnetic protection technology of short w ave communication equipment[D].Chengdu:University of Electronic Science and Technology of China,2009.43-51.(in Chinese)
[8]张海伟,史小卫,徐乐,等.高功率PIN限幅器设计及测试方案[J].强激光与粒子束,2011,23(11):3029-3031.ZHANG Haiw ei,SHI Xiaow ei,XU Le,et al.High pow er PIN limiter design and test plan[J].High Pow er Laser and Particle Beams,2011,23(11):3029-3031.(in Chinese)
[9]郑生全,邓峰,王冬冬,等.电子设备和系统射频通道高功率微波电磁脉冲场-路综合防护方法综述[J].中国舰船研究,2015,10(2):7-13.ZHENG Shengquan,DENG Feng,WANG Dongdong,et al.Overview of the HPMfield-circuit integrated protection methods for electronic equipment and system RF-channel[J].Chinese Journal of Ship Research,2015,10(2):7-14.(in Chinese)
[10]金杰,冯军,盛志伟,等.0.18微米CMOS 10Gb/s光接收机限幅放大器[J].电子学报,2004,32(8):1393-1395.JIN Jie,FENG Jun,SHENG Zhi-w ei,et al.0.18μm CMOS limiting amplifier for 10Gb/s optical receiver[J].Acta Electronica Sinca,2004,32(8):1393-1395.(in Chinese)
[11]Strollo G M.A new SPICE model of power P-I-N diode based on asymptotic w aveform evaluation[J].Pow er Electronics,IEEE Transaction on,1997,12(1):12-20.
[12]Caverly R H,Drozdovski N V,Drozdovskaia L M.SPICE modeling of microw ave and RF control diodes[A].Proceedings of the Circuits and Systems,Proceedings of the43rd IEEE Midw est Symposium on[C].Lansing,USA:IEEE,2000.28-31.
[13]Caverly R H,Quinn MJ.Time domain modeling of PIN control and limiter diodes[J].IEEE MTT-S Digest,1999,1(6):719-722.
[14]Mcnutt T R,Hefner A R,Mantooth H A,et al.Silicon carbide Pi N and merged Pi N Schottky pow er diode models implemented in the Saber circuit simulator[J].Pow er Electronics,IEEE Transactions on,2004,19(3):573-581.
[15]汪海洋,李家胤,周翼鸿,等.PIN限幅器PSpice模拟与实验研究[J].强激光与粒子束,2006,18(1):88-92.WANG Haiyang,LI Jiayin,ZHOU Yihong,et al.Experimentstudy and PSpice simulation of PIN diode research[J].High Power Laser and Particle Beams,2006,18(1):88-92.(in Chinese)
[16]姚常飞,周明,罗运生,等.基于巴特沃斯低通滤波器的毫米波宽带低插损限幅器研究[J].电子学报,2013,41(9):1810-1814.YAO Chang-fei,ZHOU Ming,LUO Yun-sheng,et al.Research on millimeter w ave broad-band and low insertion loss limiters based on butterw orth low pass filter[J].Acta Electronica Sinica,2013,41(9):1810-1814.(in Chinese)
[2]怀特.微波半导体控制电路[M].王晦光,译.北京:科学出版社,1983.179-183.
[3]刘国靖,刘国至,潘泉,等.高功率微波短脉冲雷达接收机保护装置设计[J].西安电子科技大学学报,2002,29(2):236-240.LIU Guojing,LIU Guozhi,PAN Quan,et al.The fundamental design of HPMshort-pulse radar receiver protectors[J].Journal of Xidian University,2002,29(2):236-240.(in Chinese)
[4]朱长青,刘尚合,魏明.ESD辐射场测试研究[J].电子学报,2005,33(9):1702-1705.ZHU Chang-qing,LIU Shang-he,WEI Ming.A study on test&measurement of the radiated field by ESD[J].Acta Electronica Sinca,2005,33(9):1702-1705.(in Chinese)
[5]陈盘训.半导体器件和集成电路的辐射效应[M].北京:国防工业出版社,2005.328-333.
[6]张忠连.超短波通信系统射频前端电磁防护技术研究[D].成都:电子科技大学,2009.34-39.ZHANG Zhonglian.Study on RF electromagnetic protection technology of ultra short w ave communication system[D].Chengdu:University of Electronic Science and Technology of China,2009.34-39.(in Chinese)
[7]颜克文.短波通信设备电磁防护技术研究[D].成都:电子科技大学,2009.43-51.YAN Ke w en.Research on electromagnetic protection technology of short w ave communication equipment[D].Chengdu:University of Electronic Science and Technology of China,2009.43-51.(in Chinese)
[8]张海伟,史小卫,徐乐,等.高功率PIN限幅器设计及测试方案[J].强激光与粒子束,2011,23(11):3029-3031.ZHANG Haiw ei,SHI Xiaow ei,XU Le,et al.High pow er PIN limiter design and test plan[J].High Pow er Laser and Particle Beams,2011,23(11):3029-3031.(in Chinese)
[9]郑生全,邓峰,王冬冬,等.电子设备和系统射频通道高功率微波电磁脉冲场-路综合防护方法综述[J].中国舰船研究,2015,10(2):7-13.ZHENG Shengquan,DENG Feng,WANG Dongdong,et al.Overview of the HPMfield-circuit integrated protection methods for electronic equipment and system RF-channel[J].Chinese Journal of Ship Research,2015,10(2):7-14.(in Chinese)
[10]金杰,冯军,盛志伟,等.0.18微米CMOS 10Gb/s光接收机限幅放大器[J].电子学报,2004,32(8):1393-1395.JIN Jie,FENG Jun,SHENG Zhi-w ei,et al.0.18μm CMOS limiting amplifier for 10Gb/s optical receiver[J].Acta Electronica Sinca,2004,32(8):1393-1395.(in Chinese)
[11]Strollo G M.A new SPICE model of power P-I-N diode based on asymptotic w aveform evaluation[J].Pow er Electronics,IEEE Transaction on,1997,12(1):12-20.
[12]Caverly R H,Drozdovski N V,Drozdovskaia L M.SPICE modeling of microw ave and RF control diodes[A].Proceedings of the Circuits and Systems,Proceedings of the43rd IEEE Midw est Symposium on[C].Lansing,USA:IEEE,2000.28-31.
[13]Caverly R H,Quinn MJ.Time domain modeling of PIN control and limiter diodes[J].IEEE MTT-S Digest,1999,1(6):719-722.
[14]Mcnutt T R,Hefner A R,Mantooth H A,et al.Silicon carbide Pi N and merged Pi N Schottky pow er diode models implemented in the Saber circuit simulator[J].Pow er Electronics,IEEE Transactions on,2004,19(3):573-581.
[15]汪海洋,李家胤,周翼鸿,等.PIN限幅器PSpice模拟与实验研究[J].强激光与粒子束,2006,18(1):88-92.WANG Haiyang,LI Jiayin,ZHOU Yihong,et al.Experimentstudy and PSpice simulation of PIN diode research[J].High Power Laser and Particle Beams,2006,18(1):88-92.(in Chinese)
[16]姚常飞,周明,罗运生,等.基于巴特沃斯低通滤波器的毫米波宽带低插损限幅器研究[J].电子学报,2013,41(9):1810-1814.YAO Chang-fei,ZHOU Ming,LUO Yun-sheng,et al.Research on millimeter w ave broad-band and low insertion loss limiters based on butterw orth low pass filter[J].Acta Electronica Sinica,2013,41(9):1810-1814.(in Chinese)