一款S波段大功率限幅器微封装模块设计
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摘要
针对芯片封装小型化和高密度组装的技术趋势和行业要求,文章介绍了南京国博电子有限公司新研发的一款2~6 GHz无源限幅器模块,采用4 mm×4 mm×1.5 mm金属陶瓷无引脚表贴(QFN)封装,可伐盖板平行缝焊工艺,气密结构,在10 us脉宽、10%占空比脉冲条件下,耐受100 W输入功率,限幅电平不超过15 d Bm,该产品具有体积小、重量轻、承受功率大、可靠性高、一致性好等特点。
With the trend of microchip packaging and high-density assembly technology and industry requirements,this paper introduces a new 2-6 GHz passive limiter module developed by Nanjing Guobo Co.,Ltd., which uses 4 mm×4 mm×1.5 mm metal ceramic quad flat non-leaded(QFN)package and airtight structure with parallel seam weldingtechnology. Under the condition of lous pulse width and 10% duty cycle pulse, the input power of 100 W is tolerated,and the limit level is no more than 15 d Bm. This product has the characteristics of small size, light weight, high affordable power, high reliability and good consistency.
With the trend of microchip packaging and high-density assembly technology and industry requirements,this paper introduces a new 2-6 GHz passive limiter module developed by Nanjing Guobo Co.,Ltd., which uses 4 mm×4 mm×1.5 mm metal ceramic quad flat non-leaded(QFN)package and airtight structure with parallel seam weldingtechnology. Under the condition of lous pulse width and 10% duty cycle pulse, the input power of 100 W is tolerated,and the limit level is no more than 15 d Bm. This product has the characteristics of small size, light weight, high affordable power, high reliability and good consistency.
引文
[1]薛正辉,杨仕明,李伟明,等.微波固态电路[M].北京:北京理工大学出版社,2004.
[2]马海棠.一种DC~4 GHz微波限幅器的设计方法[J].科技信息,2010(19):137.
[3]张海伟,史小卫,徐乐,等.高功率PIN限幅器设计及测试方案[J].强激光与粒子束,2011(11):3029-3032.
[4]仝良玉,蒋长顺,张元伟,等.热仿真设计在陶瓷封装中的应用研究[J].电子与封装,2014(6):1-3.
[5]高辉,仝良玉,蒋长顺.多芯片陶瓷封装的结-壳热阻分析方法[J].电子与封装,2016(7):1-4.
[2]马海棠.一种DC~4 GHz微波限幅器的设计方法[J].科技信息,2010(19):137.
[3]张海伟,史小卫,徐乐,等.高功率PIN限幅器设计及测试方案[J].强激光与粒子束,2011(11):3029-3032.
[4]仝良玉,蒋长顺,张元伟,等.热仿真设计在陶瓷封装中的应用研究[J].电子与封装,2014(6):1-3.
[5]高辉,仝良玉,蒋长顺.多芯片陶瓷封装的结-壳热阻分析方法[J].电子与封装,2016(7):1-4.