CsI光阴极在紫外波段的时间弥散特性
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摘要
为了得到CsI光阴极在紫外波段的时间弥散特性,使用蒙特卡罗方法对CsI光阴极在紫外光入射情况下的光电发射进行模拟,研究了当阴极厚度为5~45nm、入射紫外光能量为6.8~8.4eV时CsI光阴极出射电子的时间分布。得到了CsI光阴极的时间弥散与紫外光能量和CsI光阴极厚度的关系,发现当CsI光阴极厚度小于30nm的时候,光阴极的时间弥散随紫外光的能量增加而减小,随光阴极厚度的增加而增加。当CsI光阴极厚度大于30nm的时候,光阴极的时间弥散趋于稳定,与紫外光的能量和光阴极的关系较小。
A Monte Carlo model was developed and implemented to calculate the characteristics of ultraviolet ray induced electron emission from a CsI photocathode.Time distributions of emitted electrons were investigated with an incident ultraviolet ray energy ranging from 6.8to 8.4eV and a CsI thickness ranging from 5to 45 nm.Simulation results indicate that the time dispersion of CsI photocathodes decreases with the incident ultraviolet ray energy and increases with the CsI thickness when the CsI thickness is less than 30 nm.However,when the CsI thickness is larger than 30 nm,the time dispersion of CsI photocathodes has little dependence on the incident ultraviolet ray energy and the CsI thickness.
A Monte Carlo model was developed and implemented to calculate the characteristics of ultraviolet ray induced electron emission from a CsI photocathode.Time distributions of emitted electrons were investigated with an incident ultraviolet ray energy ranging from 6.8to 8.4eV and a CsI thickness ranging from 5to 45 nm.Simulation results indicate that the time dispersion of CsI photocathodes decreases with the incident ultraviolet ray energy and increases with the CsI thickness when the CsI thickness is less than 30 nm.However,when the CsI thickness is larger than 30 nm,the time dispersion of CsI photocathodes has little dependence on the incident ultraviolet ray energy and the CsI thickness.
引文
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[3]李晋,胡昕,樊龙,等.X射线条纹相机阴极制备及其绝对标定[J].强激光与粒子束,2015,27(8):082003-1-082003-4.Li Jin,Hu Xin,Fan Long,et al.Fabrication and absolute calibration of X-ray streak camera cathode[J].High Power Laser and Particle Beams,2015,27(8):082003-1-082003-4.
[4]Khan S F,Lee J J,Izumi N,et al.Characterization of the Xray sensitivity of a streak camera used at the national ignition facility(NIF)[J].Proc.SPIE,2013,8850:88500D-1-88500D-6.
[5]Acconcia T V,Agocs,A G,Barile,F,et al.VHMPID RICH prototype using pressurized C4F8O radiator gas and VUV photon detector[J].Nuclear Instruments&Methods In Physics Research Section A,2014,767:50-60.
[6]Baishali G,Radhakrishna,V,Koushal,V,et al.Performance study of a cesium iodide photocathode-based UV photon detector in Ar/CH4 mixture[J].Photonics Research,2014,2(3):92-96.
[7]Zavoisky E K,Fanchenko S D.Image converter high-speed photography with 10-9-10-14 sec time resolution[J].Appl.Opt.,1965,4(9):1155-1167.
[8]Spicer W E,Herrera-Gomez A.Modern theory and applications of photocathodes[J].Proc.SPIE,1993,2002:18-33.
[9]Llacer J,Garwin E L.Electron-photon interaction in alkali halides.I.The transport of secondary electrons with energies between 0.25and 7.5eV[J].J.Appl.Phys,1969,40(7):2766-2775.
[10]Ashley J C,Ritchie R H,Crawford O H.Energy loss and scattering of subexcitation electrons in SiO2[C]//Proc.the10th Werner Brandt Conf.,1988:329.