低温度系数高电源抑制比宽频带带隙基准电压源的设计
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摘要
本文设计了一款低温度系数高电源抑制比的带隙基准电压源。设计采用动态阈值MOS管(DTMOS)产生温度补偿电流,以降低温漂;输出部分采用一个简单的低通滤波器,以降低高频噪声,在较宽频带内提高电源抑制比。电路采用SMIC 0.18μm标准CMOS工艺实现,供电电源为1.8V,仿真结果表明:电路在-40～130℃温度范围内,温度系数为1.54×10-6℃-1,输出基准电压为1.154V,电源抑制比在10Hz处为-76dB,在100kHz处为-85dB,在15 MHz处为-63dB。本基准源具有较好的综合性能,可为数模转换电路、模数转换电路、电源管理芯片等提供高精度的基准电压,具有较大的应用价值。
A low temperature coefficient and high PSRR bandgap reference is presented in this paper.To temperature drift,a dynamic threshold MOS transistor is used to provide compensation current.A compact low-pass filter is introduced,the noise at high frequencies is reduced,and then a high PSRR over a wide frequency range is achieved.The proposed reference is implemented in SMIC 0.18μm CMOS process.The simulation results show that the temperature coefficient is 1.54×10-6℃-1,and an output reference voltage is 1.154 Vfor temperatures from-40 ℃ to 130 ℃ with supply voltage 1.8 V.The PSRR is-76 dB at 10 Hz,-85 dB at 100 kHz,and-63 dB at 15 MHz.The reference source has good comprehensive performance,which can provide high-precision reference voltage for digital-to-analog conversion circuit,analog-to-digital conversion circuit and power management chip,and has great application value.
A low temperature coefficient and high PSRR bandgap reference is presented in this paper.To temperature drift,a dynamic threshold MOS transistor is used to provide compensation current.A compact low-pass filter is introduced,the noise at high frequencies is reduced,and then a high PSRR over a wide frequency range is achieved.The proposed reference is implemented in SMIC 0.18μm CMOS process.The simulation results show that the temperature coefficient is 1.54×10-6℃-1,and an output reference voltage is 1.154 Vfor temperatures from-40 ℃ to 130 ℃ with supply voltage 1.8 V.The PSRR is-76 dB at 10 Hz,-85 dB at 100 kHz,and-63 dB at 15 MHz.The reference source has good comprehensive performance,which can provide high-precision reference voltage for digital-to-analog conversion circuit,analog-to-digital conversion circuit and power management chip,and has great application value.
引文
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[9]尹勇生,易昕,邓红辉.一种带2阶温度补偿的负反馈箝位CMOS基准电压源[J].微电子学,2017,47(6):774-778.DOI:10.13911/j.cnki.1004-3365.2017.06.010.
[10]刘俐.一种无运放高电源抑制比的带隙基准设计[J].电子与封装,2016,16(4):24-28.DOI:10.16257/j.cnki.1681-1070.2016.0045.
[11]吕江萍,胡巧云.一种曲率补偿的高精度带隙基准源设计[J].电子与封装,2016,16(8):34-36.DOI:10.16257/j.cnki.1681-1070.2016.0096.
[12] ASSADERAGHI F,SINITSKY D,PARKE S,et al.A dynamic threshold voltage MOSFET(DTMOS)for ultra-low voltage operation[C]//Proceedings of 1994IEEE International Electron Devices Meeting.Piscataway,NJ:IEEE Press,1994:809-812.DOI:10.1109/IEDM.1994.383301.
[13] TERAUCHI M,HAMASAKI A,SUKETA A.Selectable logarithmic/linear response active pixel sensor cell with reduced fixed-pattern-noise based on dynamic threshold MOS operation[J].Japanese Journal of Applied Physics,2005,44(4B):2347-2350.DOI:10.1143/JJAP.44.2347.
[2] TAN Xiaoliang,CHAN Pakkwong,DASGUPTA U.A sub-1-V 65-nm MOS threshold monitoring-based voltage reference[J].IEEE Transactions on Very Large Scale Integration(VLSI)Systems,2015,23(10):2317-2321.DOI:10.1109/tvlsi.2014.2361766.
[3] NING Ning,ZHAO Siyuan,WU Kejun,et al.A subthreshold MOSFET voltage reference based on current mirror technology under 55nm CMOS process[J].Nanoscience and Nanotechnology Letters,2014,6(2):128-133.DOI:10.1166/nnl.2014.1734.
[4]王军,韦笃取.一种分段补偿带隙基准电压源的设计[J].广西师范大学学报(自然科学版),2017,35(2):17-23.DOI:10.16088/j.issn.1001-6600.2017.02.003.
[5]张长春,吕超群,郭宇锋,等.低温度系数高电源抑制比带隙基准源的设计[J].南京邮电大学学报(自然科学版),2013,33(2):117-121.DOI:10.14132/j.cnki.1673-5439.2013.02.009.
[6] YANG B D.250-mV supply subthreshold CMOS voltage reference using a low-voltage comparator and a charge-pump circuit[J].IEEE Transactions on Circuits and Systems II:Express Briefs,2014,61(11):850-854.DOI:10.1109/TCSII.2014.2350354.
[7] MA B,YU Fengqi.A novel 1.2-V 4.5-ppm/°C curvature-compensated CMOS bandgap reference[J].IEEE Transactions on Circuits and Systems I:Regular Papers,2014,61(4):1026-1035.DOI:10.1109/TCSI.2013.2286032.
[8]蔡超波,凡东东,宋树祥,等.一款带POR的可校正低功耗电压基准源[J].广西师范大学学报(自然科学版),2016,34(1):26-31.DOI:10.16088/j.issn.1001-6600.2016.01.004.
[9]尹勇生,易昕,邓红辉.一种带2阶温度补偿的负反馈箝位CMOS基准电压源[J].微电子学,2017,47(6):774-778.DOI:10.13911/j.cnki.1004-3365.2017.06.010.
[10]刘俐.一种无运放高电源抑制比的带隙基准设计[J].电子与封装,2016,16(4):24-28.DOI:10.16257/j.cnki.1681-1070.2016.0045.
[11]吕江萍,胡巧云.一种曲率补偿的高精度带隙基准源设计[J].电子与封装,2016,16(8):34-36.DOI:10.16257/j.cnki.1681-1070.2016.0096.
[12] ASSADERAGHI F,SINITSKY D,PARKE S,et al.A dynamic threshold voltage MOSFET(DTMOS)for ultra-low voltage operation[C]//Proceedings of 1994IEEE International Electron Devices Meeting.Piscataway,NJ:IEEE Press,1994:809-812.DOI:10.1109/IEDM.1994.383301.
[13] TERAUCHI M,HAMASAKI A,SUKETA A.Selectable logarithmic/linear response active pixel sensor cell with reduced fixed-pattern-noise based on dynamic threshold MOS operation[J].Japanese Journal of Applied Physics,2005,44(4B):2347-2350.DOI:10.1143/JJAP.44.2347.