n型晶体硅太阳电池光诱导衰减现象研究
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摘要
基于n型晶体硅太阳电池,分析了经光辐照后电池各性能参数的变化,探究了n型晶体硅太阳电池光诱导衰减机理。使用工业化设备在大面积(156 mm×156 mm)n型单晶硅片上制备太阳电池。利用太阳光谱模拟仪对制备的太阳电池进行光照处理,对比各阶段太阳电池电性能参数。结果表明,光照时会导致太阳电池表面减反射膜SiN∶H/Si界面处积聚大量固定电荷,增大界面态密度,破坏电池表面钝化层结构,导致开路电压和短路电流产生较大衰减,35 kWh/m~2光辐照后n型硅太阳电池效率衰减3.6%。在380℃低温退火处理后电池效率基本可恢复到初始状态。内量子效率测试结果表明光辐照后电池短波区域响应减弱,前表面界面效应导致电池效率发生较大衰减。
Based on n-type crystalline silicon solar cells, the change of various performance parameters of the cells after light soaking was analyzed,and the light induced degradation mechanism of n-type solar cells was explored. Solar cells were fabricated on large-area( 156 mm × 156 mm) n-type monocrystalline silicon wafers with industrial equipment. The prepared solar cells were irradiated by the solar spectral simulator and the electrical performance parameters of the solar cells in each stage were compared. The results show that light soaking can cause a large amount of fixed charges to accumulate at the SiN ∶ H/Si interface on the surface of the solar cell antireflection film,increasing the interface state density and destroying the passivation layer structure on the cell surface,resulting in large degradation of the open circuit voltage and short-circuit current. The efficiency of the n-type silicon solar cell decreased by 3. 6% after 35 kWh/m~2 light soaking. After the low temperature annealing treatment at 380 ℃,the cell efficiency can basically return to the initial state. The internal quantum efficiency test results show that the response in the short wavelength range is weakened after light soaking,and the interface effect of the front surface induces the large degradation of the cell efficiency.
Based on n-type crystalline silicon solar cells, the change of various performance parameters of the cells after light soaking was analyzed,and the light induced degradation mechanism of n-type solar cells was explored. Solar cells were fabricated on large-area( 156 mm × 156 mm) n-type monocrystalline silicon wafers with industrial equipment. The prepared solar cells were irradiated by the solar spectral simulator and the electrical performance parameters of the solar cells in each stage were compared. The results show that light soaking can cause a large amount of fixed charges to accumulate at the SiN ∶ H/Si interface on the surface of the solar cell antireflection film,increasing the interface state density and destroying the passivation layer structure on the cell surface,resulting in large degradation of the open circuit voltage and short-circuit current. The efficiency of the n-type silicon solar cell decreased by 3. 6% after 35 kWh/m~2 light soaking. After the low temperature annealing treatment at 380 ℃,the cell efficiency can basically return to the initial state. The internal quantum efficiency test results show that the response in the short wavelength range is weakened after light soaking,and the interface effect of the front surface induces the large degradation of the cell efficiency.
引文
[1]NIEWELT T,SELINGER M,GRANT N E,et al.Lightinduced activation and deactivation of bulk defects in boron-doped float-zone silicon[J].Journal of Applied Physics,2017,121(18):185702-1-185702-8.
[2]LIN C M,GLAESER M,MALGUTH E,et al.Accelerated light-induced degradation test for industrial application[C]∥Proceedings of the 33rdEU PVSEC.Amsterdam,Holand,2017:978-982.
[3]LINDROOS J,SAVIN H.Review of light-induced degradation in crystalline silicon solar cells[J].Solar Energy Materials and Solar Cells,2016,147:115-126.
[4]FISCHER H,PSCHUNDER W.Investigation of photon and thermal induced changes in silicon solar cells[C]∥Proceedings of the 10thIEEE Photovoltaic Specialists Conference.Palo Alto,CA,USA,1973:404-411.
[5]MURIN L I,TOLKAVHEVA E A,MARKEVICH V P,et al.The oxygen dimer in Si:its relationship to the lightinduced degradation of Si solar cells[J].Applied Physics Letters,2011,98(18):182101-1-182101-3.
[6]de WOLF S,CHOULAT P,SZLUFCIK J,et al.Light-induced degradation of very low resistivity multi-crystalline silicon solar cells[C]∥Proceedings of the 28thIEEE Photovoltaic Specialists Conference.Anchorage,AK,USA,2000:53-56.
[7]KIMERLING L C,ASOM M T,BENTON J L,et al.Interstitial defect reaction in silicon[J].Material Science Forum,1989,38/39/40/41:141-150.
[8]SCHMIDT J,BOTHE K,MACDONALD D H,et al.Electronically stimulated degradation of silicon solar cells[J].Journal of Materials Research,2006,21(1):5-12.
[9]宋登元,熊景峰.双面发电高效率n型Si太阳电池及组件的研制[J].太阳能学报,2013,34(12):2146-2150.SONG D Y,XIONG J F.Fabrication and characterization of high efficiency bifacial n-type silicon cell and PV modules[J].Acta Energiae Solaris Sinica,2013,34(12):2146-2150(in Chinese).
[10]LAMERS M W P E,BUTLER K,ROMIJN I G,et al.Examination of the properties of the interface of a-Si Nx∶H/Si in crystalline silicon solar cells and its effect on cell efficiency[C]∥Proceedings of MRS Fall Meeting.Boston,MA,USA,2011:1423-1428.
[11]SOPORI B.Dielectric films for Si solar cell applications[J].Journal of Electronic Materials,2005,34(5):564-570.
[12]ABERLE A G.Crystalline silicon solar cells:advanced surface passivation and analysis[M].Sydney:Centre for Photovoltaic Engineering University of New South Wales,1999:68-189.
[13]ZHAO J H,SCHMIDT J,WANG A H,et al.Performance instability in n-type PERT silicon solar cell[C]∥Proceedings of the 3rdWorld Conference on Photovoltaic Energy Conversion.Osaka,Japan,2003,1(1):923-926.
[14]BASNYAT P,SOPORI B,DEVAYAJANAM S,et al.Experimental study to separate surface and bulk contributions of light-induced degradation in crystalline silicon solar cells[J].Emerging Materials Research,2015,4(2):239-246.
[15]BOTHE K,SCHMIDT J.Electronically activated boronoxygen related recombination centers in crystalline silicon[J].Journal of Applied Physics,2006,99(1):013701-1-013701-11.
[16]SOPORI B,BASNYAT P,DEVAYAJANAM S,et al.Understanding light-induced degradation of c-Si solar cells[C]∥Proceedings of the 38thIEEE Photovoltaic Specialists Conference.Austin,TX,USA,2012,42(11):001115-001120.
[17]HERGUTH A,SCHUBERT G,KAES M,et al.Investigations on the long time behavior of the metastable boron-oxygen complex in crystalline silicon[J].Progress in Photovoltaics Research and Applications,2008,16(2):135-140.
[18]TUCCI M,SERENELLI L,de IULIIS S,et al.Characterization of Si Nx/a-Si∶H crystalline silicon surface passivation under UV light exposure[J].Thin Solid Films,2007,515(19):7625-7628.
[19]KRICK D T,LENAHAN P M,KANICKI J.Electrically active point defects in amorphous silicon nitride:an illumination and charge injection study[J].Journal of Applied Physics,1988,64(7):3558-3563.
[20]STODOLNY M K,JANSSEN G J M,van AKEN B B,et al.PID-and UVID-free n-type solar cells and modules[J].Energy Procedia,2016,92:609-616.
[21]MIHAILETCHI V D,KOMATSU Y,GEERLIGS L J.Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells[J].Applied Physics Letters,2008,92(6):063510-1-063510-3.
[2]LIN C M,GLAESER M,MALGUTH E,et al.Accelerated light-induced degradation test for industrial application[C]∥Proceedings of the 33rdEU PVSEC.Amsterdam,Holand,2017:978-982.
[3]LINDROOS J,SAVIN H.Review of light-induced degradation in crystalline silicon solar cells[J].Solar Energy Materials and Solar Cells,2016,147:115-126.
[4]FISCHER H,PSCHUNDER W.Investigation of photon and thermal induced changes in silicon solar cells[C]∥Proceedings of the 10thIEEE Photovoltaic Specialists Conference.Palo Alto,CA,USA,1973:404-411.
[5]MURIN L I,TOLKAVHEVA E A,MARKEVICH V P,et al.The oxygen dimer in Si:its relationship to the lightinduced degradation of Si solar cells[J].Applied Physics Letters,2011,98(18):182101-1-182101-3.
[6]de WOLF S,CHOULAT P,SZLUFCIK J,et al.Light-induced degradation of very low resistivity multi-crystalline silicon solar cells[C]∥Proceedings of the 28thIEEE Photovoltaic Specialists Conference.Anchorage,AK,USA,2000:53-56.
[7]KIMERLING L C,ASOM M T,BENTON J L,et al.Interstitial defect reaction in silicon[J].Material Science Forum,1989,38/39/40/41:141-150.
[8]SCHMIDT J,BOTHE K,MACDONALD D H,et al.Electronically stimulated degradation of silicon solar cells[J].Journal of Materials Research,2006,21(1):5-12.
[9]宋登元,熊景峰.双面发电高效率n型Si太阳电池及组件的研制[J].太阳能学报,2013,34(12):2146-2150.SONG D Y,XIONG J F.Fabrication and characterization of high efficiency bifacial n-type silicon cell and PV modules[J].Acta Energiae Solaris Sinica,2013,34(12):2146-2150(in Chinese).
[10]LAMERS M W P E,BUTLER K,ROMIJN I G,et al.Examination of the properties of the interface of a-Si Nx∶H/Si in crystalline silicon solar cells and its effect on cell efficiency[C]∥Proceedings of MRS Fall Meeting.Boston,MA,USA,2011:1423-1428.
[11]SOPORI B.Dielectric films for Si solar cell applications[J].Journal of Electronic Materials,2005,34(5):564-570.
[12]ABERLE A G.Crystalline silicon solar cells:advanced surface passivation and analysis[M].Sydney:Centre for Photovoltaic Engineering University of New South Wales,1999:68-189.
[13]ZHAO J H,SCHMIDT J,WANG A H,et al.Performance instability in n-type PERT silicon solar cell[C]∥Proceedings of the 3rdWorld Conference on Photovoltaic Energy Conversion.Osaka,Japan,2003,1(1):923-926.
[14]BASNYAT P,SOPORI B,DEVAYAJANAM S,et al.Experimental study to separate surface and bulk contributions of light-induced degradation in crystalline silicon solar cells[J].Emerging Materials Research,2015,4(2):239-246.
[15]BOTHE K,SCHMIDT J.Electronically activated boronoxygen related recombination centers in crystalline silicon[J].Journal of Applied Physics,2006,99(1):013701-1-013701-11.
[16]SOPORI B,BASNYAT P,DEVAYAJANAM S,et al.Understanding light-induced degradation of c-Si solar cells[C]∥Proceedings of the 38thIEEE Photovoltaic Specialists Conference.Austin,TX,USA,2012,42(11):001115-001120.
[17]HERGUTH A,SCHUBERT G,KAES M,et al.Investigations on the long time behavior of the metastable boron-oxygen complex in crystalline silicon[J].Progress in Photovoltaics Research and Applications,2008,16(2):135-140.
[18]TUCCI M,SERENELLI L,de IULIIS S,et al.Characterization of Si Nx/a-Si∶H crystalline silicon surface passivation under UV light exposure[J].Thin Solid Films,2007,515(19):7625-7628.
[19]KRICK D T,LENAHAN P M,KANICKI J.Electrically active point defects in amorphous silicon nitride:an illumination and charge injection study[J].Journal of Applied Physics,1988,64(7):3558-3563.
[20]STODOLNY M K,JANSSEN G J M,van AKEN B B,et al.PID-and UVID-free n-type solar cells and modules[J].Energy Procedia,2016,92:609-616.
[21]MIHAILETCHI V D,KOMATSU Y,GEERLIGS L J.Nitric acid pretreatment for the passivation of boron emitters for n-type base silicon solar cells[J].Applied Physics Letters,2008,92(6):063510-1-063510-3.