MEMS传感器制备中的玻璃通孔金属填充工艺设计
|
摘要
如何简单、快速且低成本制备穿通导线一直是基于玻璃通孔的微机械传感器晶圆级真空封装的技术难点。根据电化学反应理论,设计了一种有掩膜电镀的穿通导线制备方法。采用纳秒激光烧灼得到玻璃通孔,利用掩膜增大电镀时通孔周围的电流密度,实现了任意尺寸玻璃通孔的快速金属填充。实验分析确定300?m厚的玻璃最优通孔直径为100?m,通孔间的电阻均约为0.347?,最大误差为2.59%。通过沿通孔划片得到的扫描电子显微镜下图像可以看出,金属填充致密均匀,形貌良好。
The simple, rapid and low-cost preparation of the through wire is a technical difficulty for the wafer level vacuum packaging of MEMS sensor based on through-glass-via(TGA). A preparation method of the through wire with masked plating is designed based on electrochemical reaction theory. The ablated TGA is obtained by nanosecond laser burning, and the current density around the TGA is increased by the mask, which realizes the rapid metal filling of the TGA with any size. Experimental results show that the optimum TGA diameter is 100 ?m for 300 ?m thick glass. The resistances between the TGAs are all about 0.347 ? and have a maximum error of 2.59%. It can be seen from the scanning electron microscope image obtained by cutting along the TGA that the metal filling has compact uniform and good morphology.
The simple, rapid and low-cost preparation of the through wire is a technical difficulty for the wafer level vacuum packaging of MEMS sensor based on through-glass-via(TGA). A preparation method of the through wire with masked plating is designed based on electrochemical reaction theory. The ablated TGA is obtained by nanosecond laser burning, and the current density around the TGA is increased by the mask, which realizes the rapid metal filling of the TGA with any size. Experimental results show that the optimum TGA diameter is 100 ?m for 300 ?m thick glass. The resistances between the TGAs are all about 0.347 ? and have a maximum error of 2.59%. It can be seen from the scanning electron microscope image obtained by cutting along the TGA that the metal filling has compact uniform and good morphology.
引文
[1]Patti R S.Three-dimensional integrated circuits and the future of system-on-chip designs[J].Proceedings of the IEEE,2006,94(6):1214-1224.
[2]Pavlidis V F,Friedman E G.Interconnect-based design methodologies for three-dimensional integrated circuits[J].Proceedings of the IEEE,2009,97(1):123-140.
[3]熊壮,张凤田,袁明权.低g值MEMS惯性开关的设计与工艺优化[J].中国惯性技术学报,2016,24(3):404-408.Xiong Z,Zhang F T,Yuan M Q.Design and technique optimization of low-g MEMS inertial switch[J].Journal of Chinese Inertial Technology,2016,24(3):404-408.
[4]Wang Z.3-D Integration and through-silicon vias in MEMS and microsensors[J].Journal of Microelectromechanical Systems,2015,24(5):1211-1244.
[5]Lam K T,Chen Y H,Hsueh T J,et al.A 3-D Zn O-nanowire smart photo sensor prepared with through silicon via technology[J].IEEE Transactions on Electron Devices,2016,63(9):3562-3566.
[6]Roh M,Lee J,Kim W,et al.Cu filling of TSV using various current forms for three-dimensional packaging application[J].Soldering&Surface Mount Technology,2013,25(4):898-912.
[7]焦新泉,陈家斌,尹静源,等.一种大过载MEMS加速度计新型封装方法[J].中国惯性技术学报,2013,21(4):536-539.Jiao X Q,Chen J B,Yin J Y,et al.Novel packaging technology for high-g MEMS accelerometer[J].Journal of Chinese Inertial Technology,2013,21(4):536-539.
[8]胡启方,李男男,邢朝洋,等.一种采用圆片级真空封装的全硅MEMS三明治电容式加速度计[J].中国惯性技术学报,2017,17(6):358-365.Hu Q F,Li N N,Xing Z Y,et al.Full-silicon MEMSsandwich capacitive accelerometer with wafer-level packaging[J].Journal of Chinese Inertial Technology,2017,17(6):358-365.
[9]Qian L B,Xia Y S,Shi G,et al.Electrical-thermal characterization of through packaging vias in glass interposer[J].IEEE Transactions on Nanotechnology,2017,16(6):901-908.
[10]Demir K,Ogawa T,Sundaram V,et al.Reliability of through-package-vias from via-first processing with ultrathin glass[J].IEEE Transactions on Device&Materials Reliability,2017,17(4):683-691.
[11]Tang Y H,Lin Y H,Shiao M H,et al.Development of thin quartz glass utilising through-glass-via(TGV)formation by dry etching technology[J].Iet Micro&Nano Letters,2016,11(10):568-571.
[12]秦建新,陈超,任孟德,等.赫尔槽电沉积阴极电流密度与电势分布数值模拟计算[J].电镀与涂饰,2014,33(7):287-290.Qin J X,Chen C,Ren M D,et al.Numerical simulation of current density and potential distributions along cathode of a Hull cell[J].Electroplating&Finishing,2014,33(7):287-290.
[13]韦顺文.细微凹槽镀铜研究[D].长沙:中南大学,2004.Wei S W.Study on copper plating with fine groves[D].Changsha:Central South University,2004.
[14]李家明,徐淑庆,梁铭忠.复合电镀机制的研究进展[J].电镀与环保,2016,36(2):1-3.Li J M,Xu S Q,Liang M Z.Research progress of composite electroplating mechanism[J].Electroplating and Environmental Protection,2016,36(2):1-3.
[15]Saini S K,Dubey A K,Upadhyay B N,et al.Study of hole characteristics in Laser Trepan Drilling of ZTA[J].Optics Laser Technology,2018,103(2):330-339.
[16]Shorey A B,Lu R.Progress and application of through glass via(TGV)technology[C]//Pan Pacific Micro-electronics Symposium.IEEE,2016:1-6.
[2]Pavlidis V F,Friedman E G.Interconnect-based design methodologies for three-dimensional integrated circuits[J].Proceedings of the IEEE,2009,97(1):123-140.
[3]熊壮,张凤田,袁明权.低g值MEMS惯性开关的设计与工艺优化[J].中国惯性技术学报,2016,24(3):404-408.Xiong Z,Zhang F T,Yuan M Q.Design and technique optimization of low-g MEMS inertial switch[J].Journal of Chinese Inertial Technology,2016,24(3):404-408.
[4]Wang Z.3-D Integration and through-silicon vias in MEMS and microsensors[J].Journal of Microelectromechanical Systems,2015,24(5):1211-1244.
[5]Lam K T,Chen Y H,Hsueh T J,et al.A 3-D Zn O-nanowire smart photo sensor prepared with through silicon via technology[J].IEEE Transactions on Electron Devices,2016,63(9):3562-3566.
[6]Roh M,Lee J,Kim W,et al.Cu filling of TSV using various current forms for three-dimensional packaging application[J].Soldering&Surface Mount Technology,2013,25(4):898-912.
[7]焦新泉,陈家斌,尹静源,等.一种大过载MEMS加速度计新型封装方法[J].中国惯性技术学报,2013,21(4):536-539.Jiao X Q,Chen J B,Yin J Y,et al.Novel packaging technology for high-g MEMS accelerometer[J].Journal of Chinese Inertial Technology,2013,21(4):536-539.
[8]胡启方,李男男,邢朝洋,等.一种采用圆片级真空封装的全硅MEMS三明治电容式加速度计[J].中国惯性技术学报,2017,17(6):358-365.Hu Q F,Li N N,Xing Z Y,et al.Full-silicon MEMSsandwich capacitive accelerometer with wafer-level packaging[J].Journal of Chinese Inertial Technology,2017,17(6):358-365.
[9]Qian L B,Xia Y S,Shi G,et al.Electrical-thermal characterization of through packaging vias in glass interposer[J].IEEE Transactions on Nanotechnology,2017,16(6):901-908.
[10]Demir K,Ogawa T,Sundaram V,et al.Reliability of through-package-vias from via-first processing with ultrathin glass[J].IEEE Transactions on Device&Materials Reliability,2017,17(4):683-691.
[11]Tang Y H,Lin Y H,Shiao M H,et al.Development of thin quartz glass utilising through-glass-via(TGV)formation by dry etching technology[J].Iet Micro&Nano Letters,2016,11(10):568-571.
[12]秦建新,陈超,任孟德,等.赫尔槽电沉积阴极电流密度与电势分布数值模拟计算[J].电镀与涂饰,2014,33(7):287-290.Qin J X,Chen C,Ren M D,et al.Numerical simulation of current density and potential distributions along cathode of a Hull cell[J].Electroplating&Finishing,2014,33(7):287-290.
[13]韦顺文.细微凹槽镀铜研究[D].长沙:中南大学,2004.Wei S W.Study on copper plating with fine groves[D].Changsha:Central South University,2004.
[14]李家明,徐淑庆,梁铭忠.复合电镀机制的研究进展[J].电镀与环保,2016,36(2):1-3.Li J M,Xu S Q,Liang M Z.Research progress of composite electroplating mechanism[J].Electroplating and Environmental Protection,2016,36(2):1-3.
[15]Saini S K,Dubey A K,Upadhyay B N,et al.Study of hole characteristics in Laser Trepan Drilling of ZTA[J].Optics Laser Technology,2018,103(2):330-339.
[16]Shorey A B,Lu R.Progress and application of through glass via(TGV)technology[C]//Pan Pacific Micro-electronics Symposium.IEEE,2016:1-6.