1 MeV电子辐照下晶格匹配与晶格失配GaInP/GaInAs/Ge三结太阳电池辐射效应研究
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摘要
对采用MOCVD方法制备的晶格匹配(LM)与晶格失配(UMM)GaInP/GaInAs/Ge三结太阳电池进行了1MeV电子辐射效应研究。结果表明:在电子辐照下,两种电池的I-V特性参数(开路电压Voc,短路电流Isc,最大输出功率Pmax)均发生衰降,且晶格失配电池的I-V特性参数衰降均大于晶格匹配电池。在光谱响应方面,对于顶电池,晶格匹配电池的衰降大于晶格失配电池;而中间电池则前者衰降小于后者;另外,Ge底电池的光谱响应表现特殊,辐照后光谱响应变强。
In order to obtain the space solar cells which meanwhile satisfy the requirements of radiation resistance and high efficiency,the research on the radiation effects of solar cells in space is of great significance.1 MeV electron irradiation effects on the lattice matched and upright metamorphic GaInP/GaInAs/Ge triple-junction solar cells were investigated for the fluence range from 5 × 1014e/cm~2-1.5 × 1015e/cm~2,and the irradiation flux of 1.0 × 1011e/( cm~2·s) was investigated.The damage effects in the solar cells were studied by measuring their electrical properties and spectral response together.It is observed that the electrical parameters( Voc,Isc,Pmax) of both solar cells degrade seriously,and the degradation of upright metamorphic solar cell is higher than lattice matchedcell.As to the spectral response results,the GaInP top cell of lattice matched solar cell degrades more than upright metamorphic solar cell,but the Ga In As middle cell of lattice matched solar cell degrades less than upright metamorphic solar cell.Besides,the spectral response result of Ge bottom cell shows very special in both solar cells: it becomes stronger after radiation.This is mainly in that the irradiation can produce displacement damage in the crystal lattice,and the irradiation defects as recombination center can decrease the carrier lifetime,diffusion length etc.,and then affect the electrical properties of the solar cells.
In order to obtain the space solar cells which meanwhile satisfy the requirements of radiation resistance and high efficiency,the research on the radiation effects of solar cells in space is of great significance.1 MeV electron irradiation effects on the lattice matched and upright metamorphic GaInP/GaInAs/Ge triple-junction solar cells were investigated for the fluence range from 5 × 1014e/cm~2-1.5 × 1015e/cm~2,and the irradiation flux of 1.0 × 1011e/( cm~2·s) was investigated.The damage effects in the solar cells were studied by measuring their electrical properties and spectral response together.It is observed that the electrical parameters( Voc,Isc,Pmax) of both solar cells degrade seriously,and the degradation of upright metamorphic solar cell is higher than lattice matchedcell.As to the spectral response results,the GaInP top cell of lattice matched solar cell degrades more than upright metamorphic solar cell,but the Ga In As middle cell of lattice matched solar cell degrades less than upright metamorphic solar cell.Besides,the spectral response result of Ge bottom cell shows very special in both solar cells: it becomes stronger after radiation.This is mainly in that the irradiation can produce displacement damage in the crystal lattice,and the irradiation defects as recombination center can decrease the carrier lifetime,diffusion length etc.,and then affect the electrical properties of the solar cells.
引文
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[20]SUGAI M,HARADA J,IMAIZUMI M,et al..A study on the artifact external quantum efficiency of Ge bottom subcells in triple-junction solar cells[C].Proceedings of The 2013 IEEE 39th Photovoltaic Specialists Conference,Tampa,USA,2013:715-720.
[2]付蕊,陈诺夫,涂洁磊,等.基于Ⅲ-Ⅴ族材料制备的高效多结太阳电池最新技术进展[J].材料导报,2015,29(7):124-128.FU R,CHEN N F,TU J J,et al..Latest technological development of highly efficientⅢ-Ⅴmulti-junction solar cells[J].Mater.Rev.,2015,29(7):124-128.(in Chinese)
[3]周梅,赵德刚.p-In Ga N层厚度对p-i-n结构In Ga N太阳电池性能的影响及机理[J].发光学报,2015,36(5):534-538.ZHOU M,ZHAO D G.Effect of p-In Ga N layer thickness on the performance of p-i-n In Ga N solar cells[J].Chin.J.Lumin.,2015,36(5):534-538.(in Chinese)
[4]郑新和,夏宇,刘三姐,等.Ga NAs基超晶格太阳电池的分子束外延生长与器件特性[J].发光学报,2015,36(8):923-929.ZHENG X H,XIA Y,LIU S J,et al..MBE growth of Ga NAs-based superlattice solar cells and device properties[J].Chin.J.Lumin.,2015,36(8):923-929.(in Chinese)
[5]SHEN J M,SUN L J,CHEN K J,et al..Direct-bonded four-junction Ga As solar cells[J].J.Semicond.,2015,36(6):064012-1-4.
[6]ZHAO Y M,DONG J R,LI K L,et al..In Ga As P/In Ga As tandem photovoltaic devices for four-junction solar cells[J].J.Semicond.,2015,36(4):044011-1-4.
[7]牛振红,郭旗,任迪远,等.一种国产Ga In P/Ga As/Ge三结太阳电池的电子辐照特性[J].核技术,2007,30(1):37-39.NIU Z H,GUO Q,REN D Y,et al..Effects of electron irradiation on a home-made type of triple-junction Ga In P/Ga As/Ge solar cell[J].Nuclear Tech.,2007,30(1):37-39.(in Chinese)
[8]HU J M,WU Y Y,XIAO J D,et al..Degradation behaviors of electrical properties of Ga In P/Ga As/Ge solar cells under<200 ke V proton irradiation[J].Sol.Energy Mater.Sol.Cells,2008,92(12):1652-1656.
[9]LU M,WANG R,LIU Y H,et al..Adjusted NIEL calculations for estimating proton-induced degradation of Ga In P/Ga As/Ge space solar cells[J].Nuclear Instrum.Methods Phys.Res.Sect.B:Beam Interact.Mater.At.,2011,269(17):1884-1886.
[10]SATO S,MIYAMOTO H,IMAIZUMI M,et al..Degradation modeling of In Ga P/Ga As/Ge triple-junction solar cells irradiated with various-energy protons[J].Solar Energy Mater.Solar Cells,2009,93(6-7):768-773.
[11]张新辉.Ga As/Ge太阳电池抗电子辐射研究[J].电源技术,2004,28(1):17-21.ZHANG X H.Study on anti-electron radiation of Ga As/Ge solar cells[J].Chin.J.Power Sources,2004,28(1):17-21.(in Chinese)
[12]孙希鹏,肖志斌,杜永超.新型砷化镓太阳电池的宽带减反射膜设计[J].光学学报,2016,36(4):0431002-1-8.SUN X P,XIAO Z B,DU Y C.Design of broadband antireflection coating for new gallium arsenide solar cell[J].Acta Opt.Sinica,2016,36(4):0431002-1-8.(in Chinese)
[13]胡建民,吴宜勇,钱勇,等.Ga In P/Ga As/Ge三结太阳电池的电子辐照损伤效应[J].物理学报,2009,58(7):5051-5056.HU J M,WU Y Y,QIAN Y,et al..Damage of electron irradiation to the Ga In P/Ga As/Ge triple-junction solar cell[J].Acta Phys.Sinica,2009,58(7):5051-5056.(in Chinese)
[14]王祖军,唐本奇,黄绍艳,等.Ga As太阳电池1 Me V电子辐射效应数值模拟[J].核电子学与探测技术,2005,25(1):97-99WANG Z J,TANG B Q,HUANG S Y,et al..Simulation of radiation effects on Ga As solar cell by 1 Me V electrons[J].Nuclear Electron.Detect.Technol.,2005,25(1):97-99.(in Chinese)
[15]王荣,刘运宏,孙旭芳,等.国产高效Ga In P/Ga As/Ge三结太阳电池的低能质子辐射效应[J].半导体学报,2007,28(10):1599-1602.WANG R,LIU Y H,SUN X F,et al..Low-energy proton Irradiation effects of Ga In P/Ga As/Ge triple-junction solar cells for space use[J].J.Semicond.,2007,28(10):1599-1602.(in Chinese)
[16]DHARMARASU N,KHAN A,YAMAGUCHI M,et al..Effects of proton irradiation on n+p In Ga P solar cells[J].J.Appl.Phys.,2002,91(5):3306-3311.
[17]HU J M,WU Y Y,ZHANG Z W,et al..A study on the degradation of Ga As/Ge solar cells irradiated by<200 ke V protons[J].Nuclear Instrum.Methods Phys.Res.Sect.B:Beam Interact.Mater.At.,2008,266(2):267-270.
[18]YAMAGUCHI M.Radiation-resistant solar cells for space use[J].Sol.Energy Mater.Sol.Cells,2001,68(1):31-53.
[19]MEUSEL M,BAUR C,LTAY G,et al..Spectral response measurements of monolithic Ga In P/Ga(In)As/Ge triplejunction solar cells:measurement artifacts and their explanation[J].Prog.Photovolt.Res.Appl.,2003,11(8):499-514.
[20]SUGAI M,HARADA J,IMAIZUMI M,et al..A study on the artifact external quantum efficiency of Ge bottom subcells in triple-junction solar cells[C].Proceedings of The 2013 IEEE 39th Photovoltaic Specialists Conference,Tampa,USA,2013:715-720.