光伏-混合储能直流微电网能效提升策略研究
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摘要
相较于交流微电网电能转换环节多、网损大等缺点,提出一种光伏-混合储能直流微电网架构,该架构易实现分布式电源的协调控制,减小线路损耗;引入能量型和功率型储能装置组成混合储能系统,可降低功率波动引起的损耗,并优化混合储能系统的能量流动策略。采用更加高效率的DC/DC变换器代替光伏逆变器,提升系统光电转换效率。深层次节能优化是通过更换DC/DC变换器中半导体器件材料,采用基于氮化镓(GaN)高电子迁移率(HEMT)型场效应晶体管(FET)取代硅(Si)晶型FET。最后,在ADS软件中搭建仿真模型,对比两种器件的能效,并列出了各负载在交、直流微电网运行下的能效值。
Compared with the disadvantages of many power conversion links and large network loss in AC microgrid,a novel photovoltaic-hybrid energy storage DC microgrid architecture is proposed, which is easy to achieve coordinated control of distributed power supply and reduce line losses.The energy storage and power type energy storage device constitutes a hybrid energy storage system.It reduces the loss caused by power fluctuations and optimizes the energy flow strategy of the hybrid energy storage system.A more efficient DC/DC converter is used instead of a photovoltaic inverter to improve the system's photoelectric conversion efficiency.In-depth energy-saving optimization is achieved by replacing semiconductor device materials in DC/DC converters and replacing silicon(Si)-based field-effect transistors(FET) with high electron mobility(HEMT) of gallium nitride(GaN) FET. Finally, a simulation model is built in the ADS software to compare the energy efficiency of the two devices, and the energy efficiency values of each load under AC/DC microgrid operation are listed.
Compared with the disadvantages of many power conversion links and large network loss in AC microgrid,a novel photovoltaic-hybrid energy storage DC microgrid architecture is proposed, which is easy to achieve coordinated control of distributed power supply and reduce line losses.The energy storage and power type energy storage device constitutes a hybrid energy storage system.It reduces the loss caused by power fluctuations and optimizes the energy flow strategy of the hybrid energy storage system.A more efficient DC/DC converter is used instead of a photovoltaic inverter to improve the system's photoelectric conversion efficiency.In-depth energy-saving optimization is achieved by replacing semiconductor device materials in DC/DC converters and replacing silicon(Si)-based field-effect transistors(FET) with high electron mobility(HEMT) of gallium nitride(GaN) FET. Finally, a simulation model is built in the ADS software to compare the energy efficiency of the two devices, and the energy efficiency values of each load under AC/DC microgrid operation are listed.
引文
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