ZnPc/PbPc共混蒸镀薄膜二极管的制备与工作特性
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摘要
有机薄膜二极管选取酞菁锌和酞菁铅(ZnPc和PbPc)进行混合作为器件的有源层,利用多种镀膜方式,制备了结构为Cu/ZnPc+PbPc/Al的器件,其中,Zn Pc∶PbPc混合的质量比分别为1∶1、4∶5和5∶4,对二极管进行了输出特性测试和混合薄膜的吸收光谱测试。结果表明,3种混合方式的二极管均具有整流特性。通过实验分析可以得出:ZnPc∶Pb Pc的混合质量比为1∶1的器件的载流子的传输最快。实验结果表明:适当的ZnPc∶PbPc的混合质量比可以降低肖特基势垒的高度,从而使载流子的迁移率加大。由实验结果计算得出,ZnPc∶PbPc的混合质量比为1∶1的器件的势垒高度为0. 355eV,影响因子n为18. 21。
Organic thin film diode selected zinc phthalocyanine and plumbum phthalocyanine( ZnPc and PbPc) were mixed as the active layer of the device. The hybrid thin film diodes structure of Cu/ZnPc + PbPc/Al was prepared using a variety of coating methods,among them,the mass ratio of Zn Pc∶ PbPc was 1∶ 1,4∶ 5 and 5∶ 4,respectively. The electrical tests and optical tests were carried out. The results show that three types of the hybrid thin film diodes have a rectifying characteristic. Through the experimental analysis,it can be concluded that when the mass ratio of the two materials is 1 ∶ 1,the carrier transport of the device is the fastest,and the appropriate content of PbPc can reduce the height of the Schottky barrier,thus the carrier mobility increasing. It is calculated that when the mass ratio of the two materials is 1 ∶ 1,the barrier height of the device is 0. 355 eV,the influence factor is 18. 21.
Organic thin film diode selected zinc phthalocyanine and plumbum phthalocyanine( ZnPc and PbPc) were mixed as the active layer of the device. The hybrid thin film diodes structure of Cu/ZnPc + PbPc/Al was prepared using a variety of coating methods,among them,the mass ratio of Zn Pc∶ PbPc was 1∶ 1,4∶ 5 and 5∶ 4,respectively. The electrical tests and optical tests were carried out. The results show that three types of the hybrid thin film diodes have a rectifying characteristic. Through the experimental analysis,it can be concluded that when the mass ratio of the two materials is 1 ∶ 1,the carrier transport of the device is the fastest,and the appropriate content of PbPc can reduce the height of the Schottky barrier,thus the carrier mobility increasing. It is calculated that when the mass ratio of the two materials is 1 ∶ 1,the barrier height of the device is 0. 355 eV,the influence factor is 18. 21.
引文
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[4]王东兴,王泽英,王玥玥,等.垂直结构酞菁铜薄膜晶体管的工作特性测试[J].哈尔滨理工大学学报,2015,20(4):16.
[5]王东兴,刘晓廉,焦兵兵,等.Al/CuPc/Cu肖特基气敏二极管制备与特性[J].哈尔滨理工大学学报,2012,17(2):127.
[6]朱敏,张永霜,王玥玥,等.酞菁铜薄膜光电晶体管的制备与特性[J].哈尔滨理工大学学报,2014,19(5):18.
[7]李娴,蒋亚东,太惠玲,等.酞菁铜薄膜晶体管气体传感器制备及特性研究[J].电子测量与仪器学报,2012,26(12):1074.
[8]黄维.有机光电子学最新进展[J].光学与光电技术,2016(5):1.
[9]ZAN H W,KAO S C,YANG S R.Pentacene-Based Organic Phototransistor with High Sensitivity to Weak Light and Wide Dynamic Range[J].IEEE Electron Device Letters,2010(31):135.
[10]NOH Y Y,KIMA D Y.High-Photosensitivity P-Channel Organic Phototransistors Based on A Biphenyl End-Capped Fused Bithiophene Oligomer[J].Applied Physics Letters,2005:043501.
[11]T UEMURA,K NAKAYAMA,Y HIROSE,et al.Band-like Transport in Solution-Crystallized Organic Transistors[J].Current Applied Physics,2012:87.
[12]CHO Sang Mi,HAN Seung Hoon,KIM Jun Hee,et al.Photoleakage currents in organic thin-film transistors[J].Current Applied Physics,2006:071106.
[13]林洋,司长峰,彭翠云,等.环境湿度对有机电致发光二极管功能材料的影响[J].功能材料,2017(1):1109.
[14]陈海明,靳宝善.有机半导体器件的现状及发展趋势[J].微纳电子技术,2010,47(08):470.
[15]何智兵,韩高荣,吴卫东,等.真空热蒸发酞菁铜(CuPc)薄膜的结构及光学、电学性能研究[J].真空科学与技术学报,2005:278.
[16]谢吉鹏,吕文理,杨汀,等.基于酞菁铜的有机光敏场效应管[J].发光学报,2012,33(9):991.
[17]UEMURA T,NAKAYAMA K,HIROSE Y,et al.Band-like Transport in Solution-crystallized Organic Transistors[J].Current Applied Physics,2012:87.
[18]ZORBA Serkan,GAO Yongli.Feasibility of Static Induction Transistor with Organic Semi-conductors[J].Current Applied Physics,2005,86:193508.
[19]凌曦,张锦.酞菁铅在石墨烯表面吸附行为的拉曼光谱研究[J].物理化学学报,2012:2356.
[20]BIALEK B,KIM In Gee,LEE Jae Il.Electronic Structure of Copper Phthalocyanine Monolayer:a Frst-principles Study[J].Thin Solid Films,2003:110.
[21]刘雪,骆定法,于东,等.杂化轨道的成键能力与键能[J].淄博学院学报(自然科学与工程版),2000(4):67.