7.5 kW电动汽车碳化硅逆变器设计
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摘要
第三代功率半导体碳化硅SiC(silicon carbide)具有高耐压等级、开关速度快以及耐高温的特点,能显著提高电动汽车驱动系统的效率、功率密度和可靠性。首先,设计了两电平三相逆变器主电路和带有保护功能的隔离型驱动电路,使用LTSpice仿真分析了门极电阻对驱动性能的影响;其次,建立了逆变器的功率损耗与热阻模型,使用Icepak对散热器进行了散热分析;再次,讨论了PCB板寄生参数对主电路和驱动电路的影响,并提出了减少寄生参数的措施;最后,采用CREE公司的1 200 V/40 mΩSiC MOSFET制作了1台7.5 kW的实验样机,并给出了测试结果。
The third-generation semiconductor silicon carbide(SiC) has characteristics of high-level withstand voltage, fast switching speed and high-temperature supportability, which can significantly improve the efficiency, power density and reliability of the drive system of electric vehicles. In this paper, the main circuit of a two-level three-phase inverter and an isolated driver circuit with protection function were designed, and the effect of gate resistance on the driver performance was simulated using LTSpice. In addition, the power loss of the inverter and its thermal resistance model were analyzed, and the heat dissipation characteristics of heat sink was analyzed using Icepak. Afterwards, the effects of PCB board's parasitic parameters on the main circuit and the driver circuit were discussed, and the measures to reduce these parasitic parameters were also proposed. Finally, a 7.5 kW prototype was fabricated with 1200 V/40 mΩ SiC MOSFETs made by CREE, and the test results were given.
The third-generation semiconductor silicon carbide(SiC) has characteristics of high-level withstand voltage, fast switching speed and high-temperature supportability, which can significantly improve the efficiency, power density and reliability of the drive system of electric vehicles. In this paper, the main circuit of a two-level three-phase inverter and an isolated driver circuit with protection function were designed, and the effect of gate resistance on the driver performance was simulated using LTSpice. In addition, the power loss of the inverter and its thermal resistance model were analyzed, and the heat dissipation characteristics of heat sink was analyzed using Icepak. Afterwards, the effects of PCB board's parasitic parameters on the main circuit and the driver circuit were discussed, and the measures to reduce these parasitic parameters were also proposed. Finally, a 7.5 kW prototype was fabricated with 1200 V/40 mΩ SiC MOSFETs made by CREE, and the test results were given.
引文
[1]王学梅.宽禁带碳化硅功率器件在电动汽车中的研究与应用[J].中国电机工程学报,2014,34(3):371-379.Wang Xuemei.Researches and applications of wide bandgap SiC power devices in electric vehicles[J].Proceedings of the CSEE,2014,34(3):371-379(in Chinese).
[2]聂新.碳化硅功率器件在永磁同步电机驱动器中的应用研究[D].南京:南京航空航天大学,2015.Nie Xin.Research on applications of SiC power devices in the permanent magnet synchronous motor drive[D].Nanjing:Nanjing University of Aeronautics and Astronautics,2015(in Chinese).
[3]Cooke M.Wide load potential for electric vehicles[J].Compounds&Advanced Silicon,2009,4(5):70-75
[4]Zdanowski M,Peftitsis D,Piasecki S,et al.On the design process of a 6-kVA Quasi-Z-inverter Employing SiC power devices[J].IEEE Transactions on Power Electronics,2016,31(11):7499-7508.
[5]李宇雄,黄志召,方建明,等.基于封装集成技术的高功率密度碳化硅单相逆变器[J].电源学报,2016,14(4):103-111.Li Yuxiong,Huang Zhizhao,Fang Jianming,et al.SiC single phase inverter with high power density based on packaging integration technology[J].Journal of Power Supply,2016,14(4):103-111(in Chinese).
[6]彭咏龙,李荣荣,李亚斌.大功率SiC MOSFET驱动电路设计[J].电测与仪表,2015,52(11):74-78.Peng Yonglong,Li Rongrong,Li Yabin.Design of high power SiC MOSFET driver circuit[J].Electrical Measurement&Instrumentation,2015,52(11):74-78(in Chinese).
[7]巴腾飞.SiC MOSFET桥式电路串扰问题分析及抑制方法研究[D].北京:北京交通大学,2016.Ba Tengfei.Research on the analysis and suppression methods for crosstalk of SiC MOSFET bridge circuit[D].Beijing:Beijing Jiaotong University,2016(in Chinese).
[8]陈渊伟.车用DC-Link电容器的选择和主要电参数估算[J].电子世界,2016,12:98-99.
[9]C2M0040120D Datasheet[OL].美国:Cree InC.[2015-10].http://www.wolfspeed.com.
[10]谢立军.SiC逆变器仿真研究及实验装置研制[D].北京:中国电力科学研究院,2015.Xie Lijun.SiC inverter simulation research and development of experimental equipment[D].Beijing:China Electric Power Research Institute,2015(in Chinese).
[11]Chinthavali M,Tawfik J A,Rao V A.Design and analysis of a 55-kW air-cooled automotive traction drive inverter[C]//2011 IEEE Energy Conversion Congress and Exposition.Phoenix,AZ,USA,2011:2345-2352.
[12]Ozpineci B,Tolbert L M,Islam S K,et al.Effects of silicon carbide(SiC)power devices on HEV PWM inverter losses[C]//IECON'01 27th Annual Conference of the Indus-trial Electronics Society.Denver,CO,USA,2001,2:1061-1066.
[13]Design Considerations for Designing with Cree SiC Modules Part 1.Understanding the Effects of Parasitic Inductance[OL].U.S.A.:Cree InC.[2015-3].http://www.wolfspeed.com.
[14]Design Considerations for Designing with Cree SiC Modules Part 2:Techniques for Minimizing Parasitic Inductance[OL].U.S.A.:Cree InC.[2015-3].http://www.wolfspeed.com.
[2]聂新.碳化硅功率器件在永磁同步电机驱动器中的应用研究[D].南京:南京航空航天大学,2015.Nie Xin.Research on applications of SiC power devices in the permanent magnet synchronous motor drive[D].Nanjing:Nanjing University of Aeronautics and Astronautics,2015(in Chinese).
[3]Cooke M.Wide load potential for electric vehicles[J].Compounds&Advanced Silicon,2009,4(5):70-75
[4]Zdanowski M,Peftitsis D,Piasecki S,et al.On the design process of a 6-kVA Quasi-Z-inverter Employing SiC power devices[J].IEEE Transactions on Power Electronics,2016,31(11):7499-7508.
[5]李宇雄,黄志召,方建明,等.基于封装集成技术的高功率密度碳化硅单相逆变器[J].电源学报,2016,14(4):103-111.Li Yuxiong,Huang Zhizhao,Fang Jianming,et al.SiC single phase inverter with high power density based on packaging integration technology[J].Journal of Power Supply,2016,14(4):103-111(in Chinese).
[6]彭咏龙,李荣荣,李亚斌.大功率SiC MOSFET驱动电路设计[J].电测与仪表,2015,52(11):74-78.Peng Yonglong,Li Rongrong,Li Yabin.Design of high power SiC MOSFET driver circuit[J].Electrical Measurement&Instrumentation,2015,52(11):74-78(in Chinese).
[7]巴腾飞.SiC MOSFET桥式电路串扰问题分析及抑制方法研究[D].北京:北京交通大学,2016.Ba Tengfei.Research on the analysis and suppression methods for crosstalk of SiC MOSFET bridge circuit[D].Beijing:Beijing Jiaotong University,2016(in Chinese).
[8]陈渊伟.车用DC-Link电容器的选择和主要电参数估算[J].电子世界,2016,12:98-99.
[9]C2M0040120D Datasheet[OL].美国:Cree InC.[2015-10].http://www.wolfspeed.com.
[10]谢立军.SiC逆变器仿真研究及实验装置研制[D].北京:中国电力科学研究院,2015.Xie Lijun.SiC inverter simulation research and development of experimental equipment[D].Beijing:China Electric Power Research Institute,2015(in Chinese).
[11]Chinthavali M,Tawfik J A,Rao V A.Design and analysis of a 55-kW air-cooled automotive traction drive inverter[C]//2011 IEEE Energy Conversion Congress and Exposition.Phoenix,AZ,USA,2011:2345-2352.
[12]Ozpineci B,Tolbert L M,Islam S K,et al.Effects of silicon carbide(SiC)power devices on HEV PWM inverter losses[C]//IECON'01 27th Annual Conference of the Indus-trial Electronics Society.Denver,CO,USA,2001,2:1061-1066.
[13]Design Considerations for Designing with Cree SiC Modules Part 1.Understanding the Effects of Parasitic Inductance[OL].U.S.A.:Cree InC.[2015-3].http://www.wolfspeed.com.
[14]Design Considerations for Designing with Cree SiC Modules Part 2:Techniques for Minimizing Parasitic Inductance[OL].U.S.A.:Cree InC.[2015-3].http://www.wolfspeed.com.