热型ALD技术制备镍薄膜及其金属硅化物
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摘要
金属硅化物材料具有较低的接触电阻,并且与硅材料有较好的兼容性,所以在互补金属氧化物半导体(CMOS)器件中被看作是重要的电极材料。形成镍金属硅化物的关键是镍金属单质的淀积工艺。如何在大深宽比纳米尺度的三维结构中沉积保形性好、纯度高、导电性好的镍金属单质薄膜是亟需解决的问题。利用热法原子层沉积(ALD)技术,以一种新型脒基镍前驱体[Ni(iPr-MeAMD)]_2,在深宽比为10:1的硅基底沟槽中沉积得到纯度高、保形性好、连续平滑的镍薄膜。对薄膜进行了X射线衍射(XRD)测试,为单一的α六方晶体结构。考察了不同退火温度下镍金属硅化物的形成,利用扫描电子显微镜(SEM)、能量色散谱(EDS)和XRD进行了物相相变的分析。退火温度400℃下得到NiSi相,其薄膜电阻率最低,约为34μΩ·cm。
Metal silicides are used as important electrode materials for complementary metaloxide-semiconductor(CMOS)devices due to their low contact resistances and good compatibility with Si.The key of the formation of nickel silicide is the deposition process of nickel single metal.The deposition of nickel thin film with good shape retention,high purity and good conductivity in three-dimensional structures with high aspect ratio is an urgent problem to be solved.A novel precursor of nickel amidinate [Ni(iPr-MeAMD)]_2 was used,the thermal atomic layer deposition(ALD)technology was used to deposit the continuous and smooth nickel thin films with high purity and good shape retention in the trench of the silicon substrate with the aspect ratio of 10:1.The deposited film was tested with the X-ray diffraction(XRD).And the result shows a singleαhexagonal crystal structure.The formation of nickel silicide at different annealing temperatures was investigated,and the phase transition was analyzed by the scanning electron microscope(SEM),energy dispersion spectrum(EDS)and XRD.NiSi phase was obtained at the annealing temperature of 400℃,and the resistivity of which was the lowest,about 34μΩ·cm.
Metal silicides are used as important electrode materials for complementary metaloxide-semiconductor(CMOS)devices due to their low contact resistances and good compatibility with Si.The key of the formation of nickel silicide is the deposition process of nickel single metal.The deposition of nickel thin film with good shape retention,high purity and good conductivity in three-dimensional structures with high aspect ratio is an urgent problem to be solved.A novel precursor of nickel amidinate [Ni(iPr-MeAMD)]_2 was used,the thermal atomic layer deposition(ALD)technology was used to deposit the continuous and smooth nickel thin films with high purity and good shape retention in the trench of the silicon substrate with the aspect ratio of 10:1.The deposited film was tested with the X-ray diffraction(XRD).And the result shows a singleαhexagonal crystal structure.The formation of nickel silicide at different annealing temperatures was investigated,and the phase transition was analyzed by the scanning electron microscope(SEM),energy dispersion spectrum(EDS)and XRD.NiSi phase was obtained at the annealing temperature of 400℃,and the resistivity of which was the lowest,about 34μΩ·cm.
引文
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[2]ZHANG S L,SMITH U.Self-aligned silicides for Ohmic contacts in complementary metaleoxideesemiconductor technology:TiSi2,CoSi2,and NiSi[J].Journal of Vacuum Science&Technology:A,2004,22(4):1361-1370.
[3]ZHANG S L,OSTLING M.Metal silicides in CMOS technology:past,present,and future trends[J].Critical Reviews in Solid State and Materials Sciences,2003,28(1):1-129.
[4]DO K,YANG C,KANG I,et al.Formation of low-resistivity nickel silicide with high temperature stability from atomiclayer-deposited nickel thin film[J].Japanese Journal of Applied Physics,2006,45(4B):2975-2980.
[5]CHEN J,COLINGE J P,FLANDRE D,et al.Comparison of TiSi2,CoSi2,and NiSi for thin-film silicon-on-insulator applications[J].Journal of the Electrochemical Society,1997,144(7):2437-2442.
[6]MURARKA S P,FRASER D B,SINHA A K,et al.Selfaligned cobalt disilicide for gate and interconnection and contacts to shallow junctions[J].IEEE Transactions on Electron Devices,1987,34(10):2108-2115.
[7]ROSSNAGEL S M,KIM H.From PVD to CVD to ALD for interconnects and related applications[C]//Proceedings of the IEEE International Interconnect Technology Conference.Burlingame,USA,2001:3-5.
[8]LIM B S,RAHTU A,GORDON R G.Atomic layer deposition of transition metals[J].Nature Materials,2003,2(11):749-754
[9]CHAE J,PARK H S,KANG S.Atomic layer deposition of nickel by the reduction of preformed nickel oxide[J].Electrochemical and Solid State Letters,2002,5(6):64-66
[10]DAUB M,KNEZ M,GOESELE U,et al.Ferromagnetic nanotubes by atomic layer deposition in anodic alumina membranes[C]//Proceedings of the 10th Joint MMM/INTER-MAG Conference.Maryland,USA,2007:09J111-1-09J111-3.
[11]YANG C M,YUN S W,HA J B,et al.Effectiveness of self-carbon and titanium capping layers in NiSi formation with Ni film deposited by atomic layer deposition[J].Japanese Journal of Applied Physics,2007,46(4B):1981-1983.
[12]UTRIAINEN M,KROGER-LAUKKANEN M,JOHANS-SON L S,et al.Studies of metallic thin film growth in an atomic layer epitaxy reactor using M(acac)2(M=Ni,Cu,Pt)precursors[J].Applied Surface Science,2000,157(3):151-158.
[13]HA J B,YUN S,LEE J.Effect of poly silicon thickness on the formation of Ni-FUSI gate by using atomic layer deposited nickel film[J].Current Applied Physics,2010,10(1):41-46.
[14]LEE H B R,BANG S H,KIM W H,et al.Plasma-enhanced atomic layer deposition of Ni[J].Japanese Journal of Applied Physics,2010,49(5):05FA11-1-05FA11-4.
[15]MARTENSSON P,CARLSSON J O.Atomic layer epitaxy of copper:growth and selectivity in the Cu(Ⅱ)-2,2,6,6-Tetramethyl-3,5-Heptanedionate/H2 Process[J].Journal of Electrochemical Society,1998,145(8):2926-2931.
[16]LEE B H,HWANG J K,NAM J W,et al.Low-temperature atomic layer deposition of copper metal thin films:selflimiting surface reaction of copper dimethylamino-2-Propoxide with diethylzinc[J].Angewandte Chemie International Edition,2009,48(25):4536-4539.
[17]DEY G,ELLIOTT S D.Mechanism for the atomic layer deposition of copper using diethylzinc as the reducing agent:a density functional theory study using gas-phase molecules as a model[J].Journal of Physical Chemistry,2012,116(35):8893-8901.
[18]YOON J,KIM S H,KIM H,et al.Formation of Ni silicide from atomic layer deposited Ni[J].Current Applied Physics,2016,16(7):720-725.
[19]关东旭.硅集成电路工艺基础[M].北京:北京大学出版社,2003:283-306
[20]LEE M Y,BENNETT P A.Bulk versus surface transport of nickel and cobalt on silicon[J].Physical Review Letters,1995,75(24):4460-4463.
[21]CHOI J H,KIM S S,CHEON J H,et al.Kinetics of nimediated crystallization of a-Si through a SiNx cap layer[J].Journal of The Electrochemical Society,2004,151(7):448-451.
[22]SPIT F H M,GUPTA D,TU K N.Diffusivity and solubility of Ni(63Ni)in monocrystalline Si[J].Physical Review:B,1989,39(2):1255-1260.