高压LED阵列电学特性的优化方法的研究
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摘要
高压LED制备工艺中,优化电极参数是获得均匀分布电流,改善电流输运特性,提高器件出光效率的主要方法之一。改进不同隔离层制备工艺参数与电极参数,抽样检测样品,对结果分析发现,Cr/Au电极厚度分别达到500 nm/300 nm后,总体提高了高压LED的电流输运特性,减少了高压LED漏电现象,增强了高压LED的电学稳定性,改善了金属电极厚度对高压LED的影响。通过二步法制备隔离层,改变LED工艺参数及隔离层倾角,制备出正向电压约12 V的串联高压LED。
In the manufacturing process of high-voltage LED,optimizing electrode parameters is one way to get uniform distribution current,improve current transport properties and improve the device luminous efficiency.Improving the isolation layer preparation process parameters and electrode parameters and sampling the testing samples with the thickness of Cr/Au up to 300 nm/500 nm to improve the high-voltage LED leakage current transport property,and reduce high voltage LED leakage phenomenon,improve the electrode voltage LED reliability,resulting in improving the metal electrode thickness effect on high voltage LED.By two-step preparation of isolation layer and change LED process parameters and isolation layer dip angle,series high voltage LED whose forward voltage is about 12 V was successful prepared.
In the manufacturing process of high-voltage LED,optimizing electrode parameters is one way to get uniform distribution current,improve current transport properties and improve the device luminous efficiency.Improving the isolation layer preparation process parameters and electrode parameters and sampling the testing samples with the thickness of Cr/Au up to 300 nm/500 nm to improve the high-voltage LED leakage current transport property,and reduce high voltage LED leakage phenomenon,improve the electrode voltage LED reliability,resulting in improving the metal electrode thickness effect on high voltage LED.By two-step preparation of isolation layer and change LED process parameters and isolation layer dip angle,series high voltage LED whose forward voltage is about 12 V was successful prepared.
引文
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[2]STREUBEL K,LINDER N,WIRTH R,et al.High brightness algainp light-emitting diodes[J].IEEE Journal Selected Topics In Quantum Electronics,2002,8(2):321-332.
[3]董雅娟,张俊兵,林岳明,等.Ga N基不同电极形状的LED性能比较[J].材料与器件,2011,36(3):177-193.
[4]邢艳辉,韩军,邓军,等.P型Ga N粗化提高发光二极管特性[J].物理学报,2010,59(2):1233-1236.
[5]XUE S J,FANG L,LONG X M et al.Influence of ITO,graphene thickness and electrodes buried depth on LED thermal-electrical characteristics using numerical simulation[J].Chinese Physics Letters,2014,31(2):137-140.
[6]MALYUTENKO V K,BOLGOV S S,PODOLTSEV A D.Current crowding effect on the ideality factor and efficiency droop in blue lateral In Ga N/Ga N light emitting diodes[J].Applied Physics Letters,2010,97(25):1-3.
[7]CHIANG T H,WANG C K,CHANG S J,et al.Effect of varied undoped Ga N thickness on ESD and optical properties of Ga N based LEDs[J].IEEE Photonics Technology Letters,2012,24(10):800-802.
[8]WANG C K,CHIANG T H,CHIOU Y Z.Reducing the current crowding effect on nitride-based light-emitting diodes using modulated p-extension electrode tickness[J].Japanese Journal of Applied Physics,2013,52(1):765-773.
[9]张俊兵,林岳明,柏林,等.Al Ga In P LED电极形状的优化[J].物理学报,2008,57(9):5881-5887.
[10]朱彦旭,范玉宇,曹伟伟,等.ICP刻蚀工艺对LED电流输运特性的影响[J].发光学报,2013,34(10):1363-1366.
[11]YUN J S,SHIM J I,SHIN D S.Enhancing current spreading by simple electrode pattern design in light emitting diodes[J].IEEE Transactions On Electron Devices,2008,55(5):1123-1128.
[12]HWANG S,SHIM J.A method for current spreading analysis and electon pattern design in light emitting diodes[J].IEEE Transactions On Electron Devices,2008,25(5):1123-1128.