硅基掺铒二氧化钛薄膜发光器件的电致发光:共掺镱的增强发光作用
|
摘要
在我们以前的工作(Zhu C, Lü C Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl.Phys.Lett.107 131103)中,利用掺铒(Er)二氧化钛薄膜(TiO_2:Er)作为发光层,实现了基于ITO/TiO_2:Er/SiO_2/n~+-Si结构的发光器件的Er相关可见及近红外(约1540 nm)电致发光.本文将镱(Yb)共掺入TiO_2:Er薄膜中,显著增强了Er相关可见及近红外电致发光.研究表明,一定量Yb的共掺会导致TiO_2:Er薄膜由锐钛矿相转变为金红石相,从而使得Er~(3+)离子周围晶体场的对称性降低.此外,Yb~(3+)离子比Ti~(4+)离子具有更大的半径,这使TiO_2基体中Er~(3+)离子周围的晶体场进一步畸变.晶体场的对称性降低及畸变使得Er~(3+)离子4f能级间的跃迁概率增大.由于上述原因,Yb在TiO_2:Er薄膜的共掺显著增强了相关发光器件的电致发光.
In the past years, light-emitting devices(LEDs) based on erbium(Er)-doped insulators or wide-bandgap semiconductors have received intensive attention because the intra-4 f transition(4 I_(13/2)→~4 I_(15/2)) of Er~(3+) ions at～1540 nm has potential applications in the optical interconnection for silicon-based circuits. The LEDs with rare-earth(RE)-doped SiO_x(x ≤ 2) or SiN_x(x ≤4/3) films have been well investigated as the siliconcompatible emitters. However, they suffer difficulty in injecting current and easing fatigue. In this context, the LEDs with RE-doped oxide semiconductors have been extensively investigated out of research interest in recent years. Among the oxide semiconductors, TiO_2 is a desirable host for RE-doping because it is transparent for visible and infrared light, and cost-effective, and has considerably high RE solubility. In our previous work(Zhu C, Lii C Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl. Phys. Lett. 107 131103), we have realized erbium(Er)-related visible and near-infrared(～1540 nm) electroluminescence(EL) from the LED with a structure of ITO/TiO_2:Er/Si02/n~+-Si, in which TiO_2:Er refers to the Er-doped Ti0_2 film as the lightemitting layer. In this work, we co-dope ytterbium(Yb) into the TiO_2:Er film in the aforementioned LED to significantly enhance the Er-related visible and near-infrared EL. It is revealed that a certain amount of Yb codoping enables the Ti0_2:Er film to transform its crystal phase from anatase to rutile. Such a phase transformation reduces the symmetry of crystal field surrounding the Er~(3+) ions incorporated into the Ti0_2 host.Moreover, the substitution of over-sized Yb~(3+) ions for Ti~(4+) ions in the Ti0_2 host leads to the distortion of the crystal field around the Er~(3+) ions. The aforementioned symmetry-reduction and distortion of the crystal field increase the probabilities of the intra-4 f transitions of Er~(3+) ions. Due to the aforementioned reason, the Yb codoping into the Ti0_2:Er film remarkably enhances the EL from the corresponding LED. It is believed that the strategy of Yb-codoping can be adopted to enhance the EL from the LEDs with other RE-doped Ti0_2 films.
In the past years, light-emitting devices(LEDs) based on erbium(Er)-doped insulators or wide-bandgap semiconductors have received intensive attention because the intra-4 f transition(4 I_(13/2)→~4 I_(15/2)) of Er~(3+) ions at～1540 nm has potential applications in the optical interconnection for silicon-based circuits. The LEDs with rare-earth(RE)-doped SiO_x(x ≤ 2) or SiN_x(x ≤4/3) films have been well investigated as the siliconcompatible emitters. However, they suffer difficulty in injecting current and easing fatigue. In this context, the LEDs with RE-doped oxide semiconductors have been extensively investigated out of research interest in recent years. Among the oxide semiconductors, TiO_2 is a desirable host for RE-doping because it is transparent for visible and infrared light, and cost-effective, and has considerably high RE solubility. In our previous work(Zhu C, Lii C Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl. Phys. Lett. 107 131103), we have realized erbium(Er)-related visible and near-infrared(～1540 nm) electroluminescence(EL) from the LED with a structure of ITO/TiO_2:Er/Si02/n~+-Si, in which TiO_2:Er refers to the Er-doped Ti0_2 film as the lightemitting layer. In this work, we co-dope ytterbium(Yb) into the TiO_2:Er film in the aforementioned LED to significantly enhance the Er-related visible and near-infrared EL. It is revealed that a certain amount of Yb codoping enables the Ti0_2:Er film to transform its crystal phase from anatase to rutile. Such a phase transformation reduces the symmetry of crystal field surrounding the Er~(3+) ions incorporated into the Ti0_2 host.Moreover, the substitution of over-sized Yb~(3+) ions for Ti~(4+) ions in the Ti0_2 host leads to the distortion of the crystal field around the Er~(3+) ions. The aforementioned symmetry-reduction and distortion of the crystal field increase the probabilities of the intra-4 f transitions of Er~(3+) ions. Due to the aforementioned reason, the Yb codoping into the Ti0_2:Er film remarkably enhances the EL from the corresponding LED. It is believed that the strategy of Yb-codoping can be adopted to enhance the EL from the LEDs with other RE-doped Ti0_2 films.
引文
[1] Ennen H, Pomrenke G, Axmann A, Eisele K, Haydl W,Schneider J 1985 Appl. Phys. Lett. 46 381
[2] Zavada J M, Jin S X, Nepal N, Lin J Y, Jiang H X, Chow P,Hertog B 2004 Appl. Phys. Lett. 84 1061
[3] Ramirez J M, Cueff S, Berencen Y, Labbe C, Garrido B 2014J. Appl. Phys. 116 083103
[4] Cueff S, Manel Ramirez J, Kurvits J A, Berencén Y, Zia R,Garrido B, Rizk R, LabbéC 2013 Appl. Phys. Lett. 103191109
[5] Fujii M, Imakita K, Watanabe K, Hayashi S 2004 J. Appl.Phys. 95 272
[6] Castagna M E, Coffa S, Monaco M, Muscara A, Caristia L,Lorenti S, Messina A 2003 Mater. Set. Eng. B 105 83
[7] Prucnal S, Sun J M, Rebohle L, Skorupa W 2008 Mater. Sci.Eng. B 146 241
[8] Bang H, Piao G, Sawahata J, Li Z, Nomura M 2002 Phys.Stat. Sol. 0 430
[9] Garter M, Scofield J, Birkhahn R, Steckl A J 1999 Appl.Phys. Lett. 74 182
[10] Steckl A J, Birkhahn R 1998 Appl. Phys. Lett. 73 1700
[11] Zhang Z, Qin J, Shi W, Zhang Y, Liu Y, Gao H, Mao Y 2018Nanoscale. Res. Lett. 13 147
[12] Mokoena T P, Linganiso E C, Kumar V, Swart H C, Cho S H, Ntwaeaborwa O M 2017 J. Colloid. Interface. Sci. 496 87
[13] Wu Y, Lin S, Liu J, Ji Y, Xu J, Xu L, Chen K 2017 Opt.Express. 25 22648
[14] Dehdouh H, Bensaha R, Zergoug M J M R E 2017 Mater.Res. Express 4 086408
[15] Yang Y, Jin L, Ma X, Yang D 2012 Appl. Phys. Lett. 100031103
[16] Zhu C, LC Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl. Phys. Lett. 107 131103
[17] Judd B R 1962 Phys. Rev. 127 750
[18] Ting C C, Chen S Y, Lee H Y 2003 J. Appl. Phys. 94 2102
[19] Cao B S, He Y Y, Feng Z Q, Zhang H Z, Wei Z S, Dong B2012 J. Sol-Gel. Sei. Techn. 62 419
[20] Shang Q K, Yu H, Kong X G, Wang H D, Wang X, Sun Y J,Zhang Y L, Zeng Q H 2008 J. Lumin. 128 1211
[21] Singh V, Rai V K, Singh N, Pathak M S, Rathaiah M,Venkatramu V, Patel R V, Singh P K, Dhoble S J 2017Spectrochim. Acta, Part A 171 229
[22] Xu D, Yao L, Lin H, Yang S, Zhang Y 2018 J. Cryst.Growth. 490 41
[23] Yang Y, LC, Zhu C, Li S, Ma X, Yang D 2014 Appl. Phys.Lett. 104 201109
[24] Wang S F, Hsu Y F, Lee R L, Lee Y S 2004 Appl. Surf. Sci.229 140
[25] Houng M P, Wang Y H, Chang W J 1999 J. Appl. Phys. 861488
[26] Berencén Y, Wutzler R, Rebohle L, Hiller D, Ramírez J M,Rodríguez J A, Skorupa W, Garrido B 2013 Appl. Phys. Lett.103 111102
[27] Kadoshima M, Hiratani M, Shimamoto Y, Torii K, Miki H,Kimura S, Nabatame T 2003 Thin Solid Films 424 224
[28] Tang H, Prasad K, Sanjinès R, Schmid P E, Lévy F 1994 J.Appl. Phys. 75 2042
[29] Scanlon D O, Dunnill C W, Buckeridge J, Shevlin S A,Logsdail A J, Woodley S M, Catlow C R, Powell M J,Palgrave R G, Parkin I P, Watson G W, Keal T W,Sherwood P, Walsh A, Sokol A A 2013 Nat. Mater. 12 798
[30] Xiong G, Joly A G, Beck K M, Hess W P 2006 Phys. Stat.Sol.(c)3 3598
[31] Le Boulbar E, Millon E, Ntsoenzok E, Hakim B, Seiler W,Boulmer-Leborgne C, Perriere J 2012 Opt. Mater. 34 1419
[32] Gao X, Liu X, Wen Q, Yang X, Xiao S 2014 J. Appl. Phys.116 173105
[2] Zavada J M, Jin S X, Nepal N, Lin J Y, Jiang H X, Chow P,Hertog B 2004 Appl. Phys. Lett. 84 1061
[3] Ramirez J M, Cueff S, Berencen Y, Labbe C, Garrido B 2014J. Appl. Phys. 116 083103
[4] Cueff S, Manel Ramirez J, Kurvits J A, Berencén Y, Zia R,Garrido B, Rizk R, LabbéC 2013 Appl. Phys. Lett. 103191109
[5] Fujii M, Imakita K, Watanabe K, Hayashi S 2004 J. Appl.Phys. 95 272
[6] Castagna M E, Coffa S, Monaco M, Muscara A, Caristia L,Lorenti S, Messina A 2003 Mater. Set. Eng. B 105 83
[7] Prucnal S, Sun J M, Rebohle L, Skorupa W 2008 Mater. Sci.Eng. B 146 241
[8] Bang H, Piao G, Sawahata J, Li Z, Nomura M 2002 Phys.Stat. Sol. 0 430
[9] Garter M, Scofield J, Birkhahn R, Steckl A J 1999 Appl.Phys. Lett. 74 182
[10] Steckl A J, Birkhahn R 1998 Appl. Phys. Lett. 73 1700
[11] Zhang Z, Qin J, Shi W, Zhang Y, Liu Y, Gao H, Mao Y 2018Nanoscale. Res. Lett. 13 147
[12] Mokoena T P, Linganiso E C, Kumar V, Swart H C, Cho S H, Ntwaeaborwa O M 2017 J. Colloid. Interface. Sci. 496 87
[13] Wu Y, Lin S, Liu J, Ji Y, Xu J, Xu L, Chen K 2017 Opt.Express. 25 22648
[14] Dehdouh H, Bensaha R, Zergoug M J M R E 2017 Mater.Res. Express 4 086408
[15] Yang Y, Jin L, Ma X, Yang D 2012 Appl. Phys. Lett. 100031103
[16] Zhu C, LC Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl. Phys. Lett. 107 131103
[17] Judd B R 1962 Phys. Rev. 127 750
[18] Ting C C, Chen S Y, Lee H Y 2003 J. Appl. Phys. 94 2102
[19] Cao B S, He Y Y, Feng Z Q, Zhang H Z, Wei Z S, Dong B2012 J. Sol-Gel. Sei. Techn. 62 419
[20] Shang Q K, Yu H, Kong X G, Wang H D, Wang X, Sun Y J,Zhang Y L, Zeng Q H 2008 J. Lumin. 128 1211
[21] Singh V, Rai V K, Singh N, Pathak M S, Rathaiah M,Venkatramu V, Patel R V, Singh P K, Dhoble S J 2017Spectrochim. Acta, Part A 171 229
[22] Xu D, Yao L, Lin H, Yang S, Zhang Y 2018 J. Cryst.Growth. 490 41
[23] Yang Y, LC, Zhu C, Li S, Ma X, Yang D 2014 Appl. Phys.Lett. 104 201109
[24] Wang S F, Hsu Y F, Lee R L, Lee Y S 2004 Appl. Surf. Sci.229 140
[25] Houng M P, Wang Y H, Chang W J 1999 J. Appl. Phys. 861488
[26] Berencén Y, Wutzler R, Rebohle L, Hiller D, Ramírez J M,Rodríguez J A, Skorupa W, Garrido B 2013 Appl. Phys. Lett.103 111102
[27] Kadoshima M, Hiratani M, Shimamoto Y, Torii K, Miki H,Kimura S, Nabatame T 2003 Thin Solid Films 424 224
[28] Tang H, Prasad K, Sanjinès R, Schmid P E, Lévy F 1994 J.Appl. Phys. 75 2042
[29] Scanlon D O, Dunnill C W, Buckeridge J, Shevlin S A,Logsdail A J, Woodley S M, Catlow C R, Powell M J,Palgrave R G, Parkin I P, Watson G W, Keal T W,Sherwood P, Walsh A, Sokol A A 2013 Nat. Mater. 12 798
[30] Xiong G, Joly A G, Beck K M, Hess W P 2006 Phys. Stat.Sol.(c)3 3598
[31] Le Boulbar E, Millon E, Ntsoenzok E, Hakim B, Seiler W,Boulmer-Leborgne C, Perriere J 2012 Opt. Mater. 34 1419
[32] Gao X, Liu X, Wen Q, Yang X, Xiao S 2014 J. Appl. Phys.116 173105