MPCVD金刚石膜的品质对其在K-Ka波段微波介电性能的影响
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  • 英文篇名:Effect of qualities of MPCVD diamond film on microwave dielectric properties in K-Ka band
  • 作者:刘艳青 ; 丁明辉 ; 苏静杰 ; 李义峰 ; 唐伟忠
  • 英文作者:LIU Yanqing;DING Minghui;SU Jingjie;LI Yifeng;TANG Weizhong;Institute of Advanced Materials and Technology, University of Science and Technology Beijing;Institute of Microelectronics, Tsinghua University;Institute of Laser Technology,Academy of Sciences of Hebei Province;
  • 关键词:MPCVD金刚石膜 ; 拉曼光谱 ; 品质 ; 分体圆柱谐振腔 ; 介电性能 ; K-Ka波段
  • 英文关键词:MPCVD diamond films;;Raman spectra;;quality;;split-cylinder resonator;;dielectric property;;K-Ka band
  • 中文刊名:DZAL
  • 英文刊名:Electronic Components and Materials
  • 机构:北京科技大学新材料技术研究院;清华大学微电子学研究所;河北省激光研究所;
  • 出版日期:2017-04-11 10:49
  • 出版单位:电子元件与材料
  • 年:2017
  • 期:v.36;No.302
  • 基金:国家磁约束核聚变能专项资助(No.2013GB110003)
  • 语种:中文;
  • 页:DZAL201704006
  • 页数:5
  • CN:04
  • ISSN:51-1241/TN
  • 分类号:35-39
摘要
针对MPCVD金刚石膜K-Ka波段(18~40 GHz)微波电子器件领域的应用需求,以及探索金刚石膜介电性能与品质之间的关系的需要,制备了5个金刚石膜样品,并建立了一套K波段分体圆柱谐振腔微波介电性能测试装置。使用Raman光谱表征金刚石膜质量,采用K波段分体圆柱谐振腔测量金刚石膜的介电性能,并与Ka波段的结果进行比较。结果表明,不同品质的样品介电损耗在3.8×10~(-5)~76.8×10~(-5)范围内,且介电损耗与Raman半峰宽密切相关。同时,高品质金刚石膜K波段介电损耗高于Ka波段,而低品质的则呈现相反的结果。这是由于高品质金刚石膜介电损耗主要由导电性引起,而低品质金刚石膜内较高的缺陷密度导致单声子声学振动吸收和瑞利散射较大。
        A K band split-cylinder resonator device was developed to measure dielectric properties of diamond films prepared by microwave plasma chemical vapor deposition(MPCVD), and the results were compared with the measured by using Ka band split-cylinder resonator device. The quality of diamond films was analyzed by Raman spectroscopy. It shows that, dielectric loss ranges from 3.8×10~(-5)~76.8×10~(-5), depending on the quality measured by Raman spectroscopy. Moreover, due to electrical conductivity of diamond film, the dielectric loss of high quality diamond film at K band is obviously higher than that at Ka band, and due to one-phonon excitation of acoustic vibrations or Rayleigh scatterings, the dielectric loss of poor quality diamond film presents a contrary tendency.
引文
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