水热合成纳米V_2O_5·nH_2O及其负微分电阻器件
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摘要
采用水热法以偏钒酸铵和硝酸制备水合五氧化二钒(V_2O_5·nH_2O)纳米带,采用场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)、X射线粉末衍射分析仪(XRD)及拉曼光谱分析仪(Raman Spectra)对产物进行表征,采用半导体特性分析仪测试以产物为沟道的场效应器件性能。结果表明:制得的V_2O_5·nH_2O纳米带宽100~150nm,厚约20nm,含水量n在0.5~1之间,具有类晶结构;器件具有N型负微分电阻(N-NDR)效应,与V_2O_5·nH_2O的双载流子导电及Poole-Frenkel发射相关。栅压为0~9V时,开关电压随栅压增大而升高,峰谷电流比变化小,期间,栅压为1V时电压跨度最大为0.61V。
Hydrated vanadium pentoxide(V_2O_5·nH_2O)nanobelts were prepared by hydrothermal synthesis with NH_4VO_3 and HNO_3.The products were characterized by field emission scanning electron microscopy(FE-SEM),transmission electron microscopy(TEM),X-ray powder diffraction(XRD)and Raman spectra.Semiconductor characterization system was employed to test the performance of field effect transistor device which worked as channel.The results showed that the as-prepared V_2O_5·nH_2O nanobelts had a width around 100~150 nm,the thick was about 20 nm,the water content‘n'was in the range of 0.5~1,and crystal-like structure were demonstrated.The device exhibited N-type negative differential resistance(N-NDR)characteristic.The performance was related with ambipolar transportation and Poole-Frenkel emission of V_2O_5·nH_2O.While the gate voltage rising within 0~9 V,the switching voltages ascended and the peak-valley current ratios varied slightly,during that,the voltage spans peaked at 0.61 V when the gate voltage was 1 V.
Hydrated vanadium pentoxide(V_2O_5·nH_2O)nanobelts were prepared by hydrothermal synthesis with NH_4VO_3 and HNO_3.The products were characterized by field emission scanning electron microscopy(FE-SEM),transmission electron microscopy(TEM),X-ray powder diffraction(XRD)and Raman spectra.Semiconductor characterization system was employed to test the performance of field effect transistor device which worked as channel.The results showed that the as-prepared V_2O_5·nH_2O nanobelts had a width around 100~150 nm,the thick was about 20 nm,the water content‘n'was in the range of 0.5~1,and crystal-like structure were demonstrated.The device exhibited N-type negative differential resistance(N-NDR)characteristic.The performance was related with ambipolar transportation and Poole-Frenkel emission of V_2O_5·nH_2O.While the gate voltage rising within 0~9 V,the switching voltages ascended and the peak-valley current ratios varied slightly,during that,the voltage spans peaked at 0.61 V when the gate voltage was 1 V.
引文
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[18]何雪.氧空位对有序多孔金属氧化物薄膜物性的影响[D].石家庄:河北师范大学,2013.
[2]Yakovleva D,Pergament A,Berezina O,et al.Internal electrochromism in vanadium pentoxide xerogel films[J].Materials Science in Semiconductor Processing,2016(44):78-84.
[3]Muster J,Kim G T,Krsti'c V,et al.Electrical transport through individual vanadium pentoxide nanowires[J].Advanced Materials,2000,12(6):420-424.
[4]Bondarenka V.Electrical properties of hydrated vanadium compounds[J].Lithuanian Journal of Physics,2006,46(3):283-293.
[5]Tang Q,Li F,Zhou Z,et al.Versatile electronic and magnetic properties of corrugated V2O5two-dimensional crystal and its derived one-dimensional nanoribbons:a computational exploration[J].The Journal of Physical Chemistry C,2011,115(24):11983-11990.
[6]Wan Z,Darling R B,Anantram M P.Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film[J].Physical Chemistry Chemical Physics,2015,17(45):30248-30254.
[7]Stefanovich G,Pergament A,Stefanovich D.Electrical switching and mott transition in VO2[J].Journal of Physics:Condensed Matter,2000,12(41):8837-8845.
[8]Gorzkowski M T,Orlik M.Electrochemical oscillations and bistability during anodic dissolution of vanadium electrode in acidic media-partⅡ.The model[J].Journal of Solid State Electrochemistry,2011,15(11/12):2321-2330.
[9]刘军枫.功能氧化物纳米材料的液相合成与性质研究[D].北京:清华大学,2007.
[10]Lee J W,Lim S Y,Jeong H M,et al.Extremely stable cycling of ultra-thin V2O5 nanowire-graphene electrodes for lithium rechargeable battery cathodes[J].Energy&Environmental Science,2012,5(12):9889-9894.
[11]Qu Q T,Shi Y,Li L L,et al.V2O5·0.6H2O nanoribbons as cathode material for asymmetric supercapacitor in K2SO4solution[J].Electrochemistry Communications,2009,11(6):1325-1328.
[12]Avansi W,Ribeiro C,Leite E R,et al.Vanadium pentoxide nanostructures:an effective control of morphology and crystal structure in hydrothermal conditions[J].Crystal Growth&Design,2009,9(8):3626-3631.
[13]Livage J.Vanadium pentoxide gels[J].Chemistry of Materials,1991,3(4):578-593.
[14]Zhai T,Liu H,Li H,et al.Centimeter-long V2O5nanowires:from synthesis to field-emission,electrochemical,electrical transport,and photoconductive properties[J].Advanced Materials,2010,22(23):2547-2552.
[15]Abello L,Husson E,Repelin Y,et al.Structural study of gels of V2O5:vibrational spectra of xerogels[J].Journal of Solid State Chemistry,1985,56(3):379-389.
[16]Sanchez C,Livage J,Lucazeau G.Infrared and raman study of amorphous V2O5[J].Journal of Raman Spectroscopy,1982,12(1):68-72.
[17]Kim H S,Chauhan K R,Kim J,et al.Flexible vanadium oxide film for broadband transparent photodetector[J].Applied Physics Letters,2017,110(10):101907-101911.
[18]何雪.氧空位对有序多孔金属氧化物薄膜物性的影响[D].石家庄:河北师范大学,2013.