衬底温度对Na-Mg共掺ZnO薄膜光学性能的影响
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摘要
采用超声喷雾热解法,以石英玻璃为衬底,以乙酸锌(Zn(CH_3COO)_2·2H_2O)、硝酸镁(Mg(NO_3)_2·6H_2O)和醋酸钠(CH_3COONa·3H_2O)为前驱体溶液,在不同衬底温度(480~560℃)下制备Na-Mg共掺杂ZnO薄膜。通过X-射线衍射(XRD)、扫描电子显微镜(SEM)、光致发光(PL)谱和紫外-可见(UV-Vis)分光光度计等表征手段对样品的晶格结构、表面形貌、PL性能和透过率进行了研究。结果表明,衬底温度对薄膜结构和光学特性影响显著,当衬底温度为500℃时制备的Na-Mg共掺杂ZnO薄膜的c轴择优最明显,表面形貌更加致密,结晶质量最好,PL性能最佳。
Na-Mg co-doped ZnO thin films using zinc acetate,magnesium nitrate and sodium acetate as a precursor solution were successfully prepared on quartz substrate by ultrasonic spray pyrolysis method at different substrate temperatures(480℃-560℃).The structural,surface morphological,photoluminescence(PL)and transmission properties of the samples were investigated by X-ray diffraction(XRD),scanning electron microscope(SEM),PL spectrum and ultraviolet-visible UV-Vis spectrophotometer.The results demonstrate that the substrate temperature has important effects on structural and optical characteristics.The sample prepared at 500 ℃ owns the better c-axis preferential orientation,the more dense surface morphology,the better crystalline quality and the optimum PL properties.
Na-Mg co-doped ZnO thin films using zinc acetate,magnesium nitrate and sodium acetate as a precursor solution were successfully prepared on quartz substrate by ultrasonic spray pyrolysis method at different substrate temperatures(480℃-560℃).The structural,surface morphological,photoluminescence(PL)and transmission properties of the samples were investigated by X-ray diffraction(XRD),scanning electron microscope(SEM),PL spectrum and ultraviolet-visible UV-Vis spectrophotometer.The results demonstrate that the substrate temperature has important effects on structural and optical characteristics.The sample prepared at 500 ℃ owns the better c-axis preferential orientation,the more dense surface morphology,the better crystalline quality and the optimum PL properties.
引文
[1]Fan J C,Sreekanth K M,Xie Z,et al.p-type ZnO materials:theory growth properties and devices[J].Pro.Mater.Sci.,2013,58(6):874-878.
[2]Thomas M A,Cui J B.Electrochemical route to p-type doping of ZnO nanowires[J].Phys.Chem.Lett.,2010,1(7):1090-1094.
[3]Seol M,Kim H,Tak Y,et al.Novel nanowire array based highly efficient quantum dot sensitized solar cell[J].Chem.Commun.,2010,46(30):5521-5523.
[4]ZHOU Jun,FANG Qing-qing,WANG Bao-ming,et al.Effect of annealing and Mg content on the microstructure and optical properties of Zn1-xMgxO films[J].Acta Physica Sinica,2008,57(10):6614-6618.周军,方庆清,王保明,等.镁含量和热处理对MgyZn0.8-yO薄膜结构和发光性能的影响[J].物理学报,2008,57(10):6614-6618.
[5]WANG Yu-xin,YAN Kun,CONG Cai-xin,et al.Preparation and photoluminescence properties of AZO thin films deposited by ultrasonic spray pyrolysis method[J].Journal of Liaoning Normal University(Natural Science Edition),2015,38(1):0036-0040.王玉新,闫坤,丛彩馨,等.超声喷雾热解法制备AZO薄膜及其光致发光性能研究[J].辽宁师范大学(自然科学版),2015,38(1):0036-0040.
[6]WANG Yu-xin,SUN Jing-chang,ZHENG Ya-ru,et al.Influence of substrate temperature on structure and transmission properties of ZnO:Al thin films[J].Journal of Liaoning Normal University(Natural Science Edition),2012,35(4):478-481.王玉新,孙景昌,郑亚茹,等.衬底温度对ZnO:Al薄膜结构和光透过性能的影响[J].辽宁师范大学学报(自然科学版),2012,35(4):478-481.
[7]Soonjae K,Sekwon N A,Haseok J,et al.Effects of Sn doping on the growth morphology and electrical properties of ZnO nanowires[J].Nanotechnology,2013,24(6):065-071.
[8]DING Sheng,LI Meng-ke,WANG Xue-hong,et.al.The growth mechanism and photoluminescence of aligned nano ZnO arrays[J].Journal of Liaoning Normal University(Natural Science Edition),2006,29(3):305-307.丁圣,李梦轲,王雪红,等.取向ZnO纳米线阵列的生长机理及发光特性[J].辽宁师范大学学报(自然科学版),2006,29(3):305-307.
[9]WU Ming-xiao,ZHANG Li-zhong,TIAN Jin-peng,et al.Performance improvement of Rubrene/C70 based organic solar cells with ZnO as cathode buffer layer[J].Journal of Optoelectronics·Laser,2017,28(1):1-5.吴明晓,张利忠,田金鹏,等.ZnO缓冲层改善Rubrene/C70有机太阳能电池的性能[J].光电子·激光,2017,28(1):1-5.
[10]HE Zu-ming,XIA Yong-mei,JIANG Xing-fang,et al.Study on ZnO/Cu2O heterojunction solar cells by CdS nanocrystal-line sensitization[J].Journal of Optoelectronics·Laser,2016,27(5):513-518.何祖明,夏咏梅,江兴方,等.CdS纳米晶敏化ZnO/Cu2O异质结太阳能电池的研究[J].光电子·激光,2016,27(5):513-518.
[11]Chen J,Wang J.Research on optical properties of Aldoped ZnO films[J].Journal of Functional Materials,2010,4(41):694-696.
[12]TANG Bing,DENG Hong,SHUI Zheng-wei,et al.Preparation and Growth Mechanism of Well-aligned ZnO Nanowiresby Chemical Vapor Deposition[J].Journal of Synthetic Crystals,2007,36(2):293-296.唐斌,邓宏,税正伟,等.CVD法制备高质量ZnO纳米线及生长机理[J].人工晶体学报,2007,36(2):293-296.
[13]WANG Yu-xin,LIU Qi,LIU Zi-wei,et al.Effect of Al-doped on optical properties of N-Al co-doped ZnO thin films[J].Journal of Liaoning Normal University(Natural Science Edition),2016,39(2):0181-0185.王玉新,刘奇,刘子伟,等.Al掺杂量对N-Al共掺ZnO薄膜光学性能的研究[J].辽宁师范大学(自然科学版),2016,39(2):0181-0185.
[14]PAN Ji-lang,YIN Li-song,ZHOU Ke-xing,et al.Preparation of ZnO thin film by Sol-Gel method and its photocatalytic properties[J].Nanotechnology and Precision Engineering,2008,2(6):94-98.潘吉浪,尹荔松,周克省,等.溶胶-凝胶法制备ZnO薄膜及其光催化性能[J].纳米技术与精密工程,2008,2(6):94-98.
[15]Kang J S,Kang S H,Pang S S,et al.Investigation on the origin of green luminescence from laser-ablated ZnO thin film[J].Thin Solid Films,2003,443(1-2):5-8.
[16]Ozgur U,Alivov I YA,Liu C,et al.A comprehensive review of ZnO materials and devices[J].Journal of Applied Physics,2005,98(4):041301-041404.
[17]Park C H,Zhang S B,Wei S H.Origin of P-type doping difficulty in ZnO:the impurity perspective[J].Physical Review B,2002,66(7):0732-0736.
[18]Lee J H,Park B O.Transparent conducting ZnO:Al,In and Sn thin films deposited by the sol-gel method[J].Thin Solid Films,2003,426(1-2):94-99.
[19]Chou C S,Chou F C,Ding Y G,et al.The effect of ZnOcoating on the perform ance of a dye-sensitized solar cell[J].Solar Energy,2012,86(5):1435-1442.
[20]LI Tong,WANG Tie-gang,CHEN Jia-mei,et al.Effect of substrate temperature on the optical and electrical properties of NiO:Cu/ZnO pn heterojunctions[J].Journal of Optoelectronics·Laser,2016,27(4):386-391.李彤,王铁钢,陈佳楣,等.衬底温度对NiO:Cu/ZnO异质pn结的光电性能影响[J].光电子·激光,2016,27(4):386-391.
[2]Thomas M A,Cui J B.Electrochemical route to p-type doping of ZnO nanowires[J].Phys.Chem.Lett.,2010,1(7):1090-1094.
[3]Seol M,Kim H,Tak Y,et al.Novel nanowire array based highly efficient quantum dot sensitized solar cell[J].Chem.Commun.,2010,46(30):5521-5523.
[4]ZHOU Jun,FANG Qing-qing,WANG Bao-ming,et al.Effect of annealing and Mg content on the microstructure and optical properties of Zn1-xMgxO films[J].Acta Physica Sinica,2008,57(10):6614-6618.周军,方庆清,王保明,等.镁含量和热处理对MgyZn0.8-yO薄膜结构和发光性能的影响[J].物理学报,2008,57(10):6614-6618.
[5]WANG Yu-xin,YAN Kun,CONG Cai-xin,et al.Preparation and photoluminescence properties of AZO thin films deposited by ultrasonic spray pyrolysis method[J].Journal of Liaoning Normal University(Natural Science Edition),2015,38(1):0036-0040.王玉新,闫坤,丛彩馨,等.超声喷雾热解法制备AZO薄膜及其光致发光性能研究[J].辽宁师范大学(自然科学版),2015,38(1):0036-0040.
[6]WANG Yu-xin,SUN Jing-chang,ZHENG Ya-ru,et al.Influence of substrate temperature on structure and transmission properties of ZnO:Al thin films[J].Journal of Liaoning Normal University(Natural Science Edition),2012,35(4):478-481.王玉新,孙景昌,郑亚茹,等.衬底温度对ZnO:Al薄膜结构和光透过性能的影响[J].辽宁师范大学学报(自然科学版),2012,35(4):478-481.
[7]Soonjae K,Sekwon N A,Haseok J,et al.Effects of Sn doping on the growth morphology and electrical properties of ZnO nanowires[J].Nanotechnology,2013,24(6):065-071.
[8]DING Sheng,LI Meng-ke,WANG Xue-hong,et.al.The growth mechanism and photoluminescence of aligned nano ZnO arrays[J].Journal of Liaoning Normal University(Natural Science Edition),2006,29(3):305-307.丁圣,李梦轲,王雪红,等.取向ZnO纳米线阵列的生长机理及发光特性[J].辽宁师范大学学报(自然科学版),2006,29(3):305-307.
[9]WU Ming-xiao,ZHANG Li-zhong,TIAN Jin-peng,et al.Performance improvement of Rubrene/C70 based organic solar cells with ZnO as cathode buffer layer[J].Journal of Optoelectronics·Laser,2017,28(1):1-5.吴明晓,张利忠,田金鹏,等.ZnO缓冲层改善Rubrene/C70有机太阳能电池的性能[J].光电子·激光,2017,28(1):1-5.
[10]HE Zu-ming,XIA Yong-mei,JIANG Xing-fang,et al.Study on ZnO/Cu2O heterojunction solar cells by CdS nanocrystal-line sensitization[J].Journal of Optoelectronics·Laser,2016,27(5):513-518.何祖明,夏咏梅,江兴方,等.CdS纳米晶敏化ZnO/Cu2O异质结太阳能电池的研究[J].光电子·激光,2016,27(5):513-518.
[11]Chen J,Wang J.Research on optical properties of Aldoped ZnO films[J].Journal of Functional Materials,2010,4(41):694-696.
[12]TANG Bing,DENG Hong,SHUI Zheng-wei,et al.Preparation and Growth Mechanism of Well-aligned ZnO Nanowiresby Chemical Vapor Deposition[J].Journal of Synthetic Crystals,2007,36(2):293-296.唐斌,邓宏,税正伟,等.CVD法制备高质量ZnO纳米线及生长机理[J].人工晶体学报,2007,36(2):293-296.
[13]WANG Yu-xin,LIU Qi,LIU Zi-wei,et al.Effect of Al-doped on optical properties of N-Al co-doped ZnO thin films[J].Journal of Liaoning Normal University(Natural Science Edition),2016,39(2):0181-0185.王玉新,刘奇,刘子伟,等.Al掺杂量对N-Al共掺ZnO薄膜光学性能的研究[J].辽宁师范大学(自然科学版),2016,39(2):0181-0185.
[14]PAN Ji-lang,YIN Li-song,ZHOU Ke-xing,et al.Preparation of ZnO thin film by Sol-Gel method and its photocatalytic properties[J].Nanotechnology and Precision Engineering,2008,2(6):94-98.潘吉浪,尹荔松,周克省,等.溶胶-凝胶法制备ZnO薄膜及其光催化性能[J].纳米技术与精密工程,2008,2(6):94-98.
[15]Kang J S,Kang S H,Pang S S,et al.Investigation on the origin of green luminescence from laser-ablated ZnO thin film[J].Thin Solid Films,2003,443(1-2):5-8.
[16]Ozgur U,Alivov I YA,Liu C,et al.A comprehensive review of ZnO materials and devices[J].Journal of Applied Physics,2005,98(4):041301-041404.
[17]Park C H,Zhang S B,Wei S H.Origin of P-type doping difficulty in ZnO:the impurity perspective[J].Physical Review B,2002,66(7):0732-0736.
[18]Lee J H,Park B O.Transparent conducting ZnO:Al,In and Sn thin films deposited by the sol-gel method[J].Thin Solid Films,2003,426(1-2):94-99.
[19]Chou C S,Chou F C,Ding Y G,et al.The effect of ZnOcoating on the perform ance of a dye-sensitized solar cell[J].Solar Energy,2012,86(5):1435-1442.
[20]LI Tong,WANG Tie-gang,CHEN Jia-mei,et al.Effect of substrate temperature on the optical and electrical properties of NiO:Cu/ZnO pn heterojunctions[J].Journal of Optoelectronics·Laser,2016,27(4):386-391.李彤,王铁钢,陈佳楣,等.衬底温度对NiO:Cu/ZnO异质pn结的光电性能影响[J].光电子·激光,2016,27(4):386-391.