K掺杂量对K-N共掺ZnO薄膜光学性能的影响
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摘要
利用超声喷雾热解法在石英玻璃衬底上制备不同K掺杂量的K-N共掺ZnO薄膜.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、光致发光谱(PL谱)和紫外-可见分光光度计对K-N共掺ZnO薄膜的晶体结构、表面形貌及光学性能进行表征.结果表明:K-N共掺ZnO薄膜为六方纤锌矿结构并沿(002)方向择优生长;随着K掺杂量的增加,薄膜紫外发射峰的强度先升高后降低,并且吸收边出现轻微蓝移,禁带宽度增大;K-N共掺ZnO薄膜的透过率随K的掺杂量的增加先升高后降低,在65%～70%之间浮动.当K掺杂原子比为0.025时,所制备的薄膜具有高度的c轴择优取向,其薄膜表面均匀、光滑平整,具有较好的结晶度和光学性能.
K-N co-doped ZnO thin films were prepared on quartz glass substrates by ultrasonic spray pyrolysis method with different K contents.The structures,surface morphologies and optical properties of K-N co-doped ZnO films were investigated by X-ray diffraction(XRD),scanning electron microscopy(SEM),photoluminescence(PL)and UV-Vis spectrophotometer.The results show that K-N co-doped ZnO thin films have hexagonal wurtzite ZnO structures with a preferred orientation of the crystallites along(002)direction.In addition,the intensity of UV emission peak firstly increases and then decreases as K doping concentration increasing,and the transmittance cut-off wavelength exhibited a slight blue shift,which increases the band gap of the films.With the increase of K doping concentration,the transmittance of K-N co-doped ZnO film increases initially and decreases afterwards between 65%and 70%.When the atomic ratio of K doped is 0.025,the prepared films own the better c-axis preferential orientation,the more uniform and smooth surface,the better crystalline quality and optical properties.
K-N co-doped ZnO thin films were prepared on quartz glass substrates by ultrasonic spray pyrolysis method with different K contents.The structures,surface morphologies and optical properties of K-N co-doped ZnO films were investigated by X-ray diffraction(XRD),scanning electron microscopy(SEM),photoluminescence(PL)and UV-Vis spectrophotometer.The results show that K-N co-doped ZnO thin films have hexagonal wurtzite ZnO structures with a preferred orientation of the crystallites along(002)direction.In addition,the intensity of UV emission peak firstly increases and then decreases as K doping concentration increasing,and the transmittance cut-off wavelength exhibited a slight blue shift,which increases the band gap of the films.With the increase of K doping concentration,the transmittance of K-N co-doped ZnO film increases initially and decreases afterwards between 65%and 70%.When the atomic ratio of K doped is 0.025,the prepared films own the better c-axis preferential orientation,the more uniform and smooth surface,the better crystalline quality and optical properties.
引文
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[15]王玉新,刘奇,刘子伟,等.Al掺杂量对N-Al共掺ZnO薄膜光学性能的影响[J].辽宁师范大学学报(自然科学版),2016,39(2):181-185.
[16]王玉新,刘奇,刘子伟,等.AZO种子层对ZnO纳米棒结构和光致发光性能的影响[J].辽宁师范大学学报(自然科学版),2016,39(4):469-473.
[17] LI Y P,WANG H Q,ZHOU H,et al.Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer[J].Nanoscale Research Letters,2017,12(1):551-558.
[18] LIU Y,ZHOU W,HUANG Y,et al.Unexpected ferromagnetism in n-type polycrystalline K-doped ZnO films prepared by RFmagnetron sputtering[J].Journal of Materials Science:Materials in Electronics,2015,26(11):1-5.
[19]王玉新,阎坤,丛彩馨,等.超声喷雾热解法制备AZO薄膜及其光致发光性能研究[J].辽宁师范大学学报(自然科学版),2015,38(1):36-40.
[20] TUZEMEN E S,KARA K,TAKCI D K,et al.Comparison of N-doped ZnO and N-Al codoped ZnO thin films deposited by pulsed filtered cathodic vacuum arc deposition[J].Indian Journal of Physics,2015,89(4):337-345.
[21]陈璟涵,姚文清,朱永法.射频磁控溅射法制备氮化硅基ZnO薄膜的光致发光性能研究[J].光谱学与光谱分析,2017,32(2):391-393.
[2]王玉新,孙景昌,郑亚茹,等.衬底温度对ZnO:Al薄膜结构和光透过性能的影响[J].辽宁师范大学学报(自然科学版),2012,35(4):478-481.
[3] SHANMUGANATHAN G,BANU I B S.Room temperature optical and magnetic properties of(Cu,K)doped ZnO based diluted magnetic semiconductor thin films grown by chemical bath deposition method[J].Superlattices&Microstructures,2014,75:879-889.
[4] SHABANNIA R,HASSAN H A,MAHMODI H,et al.ZnO nanorod ultraviolet photodetector on porous silicon substrate[J].Semiconductor Science&Technology,2013,28(11):5007.
[5]王金香,沈洪雪,彭小波,等.N掺杂ZnO薄膜的荧光特性研究[J].光子学报,2012,41(8):932-935.
[6]李梦轲,杨蕊,张天民,等.制备参数对ZnO纳米线阵列的影响[J].辽宁师范大学学报(自然科学版),2014,37(1):41-47.
[7] TUZEMEN E S,KARA K,TAKCI D K,et al.Comparison of N-doped ZnO and N-Al codoped ZnO thin films deposited by pulsed filtered cathodic vacuum arc deposition[J].Indian Journal of Physics,2015,89(4):337-345.
[8] HUANG Y,ZHOU W,WU P.Room-temperature ferromagnetism in epitaxial p-type K-doped ZnO films[J].Solid State Communications,2014,183:31-34.
[9]艾国齐,汪延明,苗振林,等.K离子弱掺杂ZnO薄膜的光电性能研究[J].科技与企业,2015(3):207-208.
[10]段军红,刘智昂,江茫.ZnO纳米棒阵列的制备、微结构及光学性能研究[J].南昌航空大学学报(自然科学版),2012,26(1):41-46.
[11]黄世震,翁坤.N:ZnO薄膜的受主性质研究[J].固体电子学研究与进展,2012,32(2):175-179.
[12] YANG B Q,FENG P,KUMAR A,et al.Structural and optical properties of N-doped ZnO nanorod arrays[J].Journal of Physics D Applied Physics,2009,42(19):195402-195205.
[13] JI I,KIM Y,LEEM J Y,et al.K-doping effects on the characteristics of ZnO thin films synthesized by using a spin-coating method[J].Journal of the Korean Physical Society,2014,64(10):1581-1585.
[14]张振兴,张海军,廖梦舟,等.溶胶-凝胶法制备K-N共掺ZnO薄膜的结构及光学特性[J].功能材料,2013,44(22):3301-3304.
[15]王玉新,刘奇,刘子伟,等.Al掺杂量对N-Al共掺ZnO薄膜光学性能的影响[J].辽宁师范大学学报(自然科学版),2016,39(2):181-185.
[16]王玉新,刘奇,刘子伟,等.AZO种子层对ZnO纳米棒结构和光致发光性能的影响[J].辽宁师范大学学报(自然科学版),2016,39(4):469-473.
[17] LI Y P,WANG H Q,ZHOU H,et al.Tuning the Surface Morphologies and Properties of ZnO Films by the Design of Interfacial Layer[J].Nanoscale Research Letters,2017,12(1):551-558.
[18] LIU Y,ZHOU W,HUANG Y,et al.Unexpected ferromagnetism in n-type polycrystalline K-doped ZnO films prepared by RFmagnetron sputtering[J].Journal of Materials Science:Materials in Electronics,2015,26(11):1-5.
[19]王玉新,阎坤,丛彩馨,等.超声喷雾热解法制备AZO薄膜及其光致发光性能研究[J].辽宁师范大学学报(自然科学版),2015,38(1):36-40.
[20] TUZEMEN E S,KARA K,TAKCI D K,et al.Comparison of N-doped ZnO and N-Al codoped ZnO thin films deposited by pulsed filtered cathodic vacuum arc deposition[J].Indian Journal of Physics,2015,89(4):337-345.
[21]陈璟涵,姚文清,朱永法.射频磁控溅射法制备氮化硅基ZnO薄膜的光致发光性能研究[J].光谱学与光谱分析,2017,32(2):391-393.