p沟道Cu_2O半导体薄膜场效应晶体管的制备及Ⅳ特性研究
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摘要
采用磁控溅射掩膜制备工艺,在n型Si衬底上分别制备了底栅型p沟道Cu_2O半导体薄膜场效应晶体管(TFTs).用XRD、SEM、XPS等检测分析方法对不同条件下制备的Cu_2O薄膜的晶体结构、表面形貌、化学成分进行了表征.对O_2通量、退火温度及沟道宽度等因素对半导体薄膜及器件特性的影响进行了对比研究.研究发现,O_2通量是制备Cu_2O半导体薄膜的关键因素,器件I_(DS)电流的绝对值随着栅压的绝对值的增大而增大,具有典型的p沟道增强型场效应晶体管特征.其Ⅳ特性与溅射沉积时间、沟道宽度、退火因素等有关,真空退火处理后有助于提高器件的I_(DS)的绝对值.测试表明,制备的沟道宽度为50μm的典型器件的电导率、电流开关比和阈值电压分别为0.63S/cm,1.5×10~2及-0.6V.
The bottom-gate p-channel Cu_2 O thin film field-effect transistors were fabricated on n-type Si substrates using room temperature magnetron sputtered copper with mixed O_2/Ar gases.The crystal structure,surface morphology and chemical composition of the prepared Cu_2 O thin films were characterized by XRD,XPS and SEM analytical instruments.The testing factors of O_2 flux,annealing temperature and channel width affecting on the Ⅳcharacteristics of Cu_2 O semiconductor devices were studied.The analytical result shows that the O_2 flux is a key factor in the preparation of the best Cu_2 O semiconductor thin films and the absolute value of I_(DS)increases with the increase of gate voltage.The synthesized transistor exhibited p-type behavior and gate voltage control performance with average conductivity,on-to-off current ratio,and threshold voltage of 0.63 S/cm,1.5×10~2,and-0.6 V,respectively.
The bottom-gate p-channel Cu_2 O thin film field-effect transistors were fabricated on n-type Si substrates using room temperature magnetron sputtered copper with mixed O_2/Ar gases.The crystal structure,surface morphology and chemical composition of the prepared Cu_2 O thin films were characterized by XRD,XPS and SEM analytical instruments.The testing factors of O_2 flux,annealing temperature and channel width affecting on the Ⅳcharacteristics of Cu_2 O semiconductor devices were studied.The analytical result shows that the O_2 flux is a key factor in the preparation of the best Cu_2 O semiconductor thin films and the absolute value of I_(DS)increases with the increase of gate voltage.The synthesized transistor exhibited p-type behavior and gate voltage control performance with average conductivity,on-to-off current ratio,and threshold voltage of 0.63 S/cm,1.5×10~2,and-0.6 V,respectively.
引文
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[2]PANG H,GAO F,LU Q Y.Glycine-assisted double-solvothermal approach for various cuprous oxide structures with good catalytic activities[J].Cryst Eng Comm,2010(12):406-412.
[3]PARACCHINO A,BRAUER J C,MOSER J E,et al.Synthesis and characterization of high-photoactivity electrodeposited Cu2Osolar absorber by photoelectrochemistry and ultrafast spectroscopy[J].The Journal of Physical Chemistry C,2012,116(13):7341-7350.
[4]MINAMI T,NISHI Y,MIYATA T,et al.High-Efficiency Oxide Solar Cells with ZnO/CuO Heterojunction Fabricated on Thermally Oxidized CuO Sheets[J].Applied Physics Express,2011,4(6):2301.
[5]SIEBERER M,REDINGER J,MOHN P.Electronic and magnetic structure of cuprous oxide Cu2O doped with Mn,Fe,Co,and Ni:A density-functional theory study[J].Physical Review B,2007,75(3):035203.
[6]李斌斌,朱建勋,陈照峰,等.Effect of oxygen content on structural and optical properties of single Cu2O film by reactive magnetron sputtering method[J].Journal of Shanghai Jiaotong University(Science),2012,17(5):523-526.
[7]ZOU X,FANG G J,WAN J W,et al.Improved subthreshould swing and gate-bias stressing stability of p-Type CuO thin-film transistors using a HfO2high-k gate dielectric grown on a SiO/Si substrate by pulsed laser ablation[J].Elecron Devices,2011,58(7):2003-2007.
[8]陈光华,邓金详,崔敏,等.新型电子薄膜材料[M].北京:化学工业出版社,2002:330-340.
[9]LIANG R M,CHANG Y M,WU P W,et al.Effect of annealing on the electrodeposited Cu2O films for photo electrochemical hydrogen generation[J].Thin Solid Films,2010,518(24):7191-7195.
[10]丁圣,李梦轲,王雪红,等.取向ZnO纳米线阵列的生长机理及发光特性[J].辽宁师范大学学报(自然科学版),2006,36(3):305-307.
[11]LUO H,LIANG L Y,CAO H T,et al.Structural,chemical,optical,and electrical evolution of SnOxfilms deposited by reactive rf magnetron sputtering[J].ACS Applied Materials&Interfaces,2012,4(10):5673-5677.