电极/表面接触与SrTiO_3陶瓷片介电性能的关系
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摘要
理论上,SrTiO_3(以下简称STO)晶界层电容器介电常数取决于陶瓷片的晶粒大小、导电性、晶界绝缘层的厚度和介电常数.但对实际的STO晶界层陶瓷电容器研究发现,金属电极与STO陶瓷片的表面接触对电容器的电容和介电常数也有很大影响.研究表明,当电极/STO为非欧姆接触时,STO陶瓷片的电容和介电常数较小;当电极/STO为欧姆接触时,STO陶瓷片电容器的电容和介电常数增大.采用Ag浆制作电极时,通过调整烧制Ag电极的温度和时间,当T=880℃,t=3. 5 h时,STO电容器的介电性能达到最佳,ε_r=22 850,tgδ=1. 0%.
Theoretically,dielectric constant of SrTiO_3( hereinafter referred as STO) grain boundary layer capacitor depends on the grain size,conductivity,thickness and dielectric constant of the grain boundary insulating layer( GBIL). However,in this work,it was found that the electrical property of the contact between metallic electrode and the surface of STO ceramics had a great influence on the capacitance and dielectric properties of STO GBIL capacitor in reality. The experiment result shows that the capacitance and dielectric constant is small for STO ceramic capacitor when the contact of electrode/STO is non-ohmic while it becomes much larger when the contact is ohmic type. The dielectric performance of STO GBIL capacitor can reach at a best value of εr= 22 850 and tgδ = 1. 0% by adjusting the making the Ag electrode as at a temperature of T = 880 ℃ and time t = 3. 5 h by using slurry Ag material.
Theoretically,dielectric constant of SrTiO_3( hereinafter referred as STO) grain boundary layer capacitor depends on the grain size,conductivity,thickness and dielectric constant of the grain boundary insulating layer( GBIL). However,in this work,it was found that the electrical property of the contact between metallic electrode and the surface of STO ceramics had a great influence on the capacitance and dielectric properties of STO GBIL capacitor in reality. The experiment result shows that the capacitance and dielectric constant is small for STO ceramic capacitor when the contact of electrode/STO is non-ohmic while it becomes much larger when the contact is ohmic type. The dielectric performance of STO GBIL capacitor can reach at a best value of εr= 22 850 and tgδ = 1. 0% by adjusting the making the Ag electrode as at a temperature of T = 880 ℃ and time t = 3. 5 h by using slurry Ag material.
引文
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[2]李玉超,付雪连,战艳虎,等.高介电常数、低介电损耗聚合物复合电介质材料研究进展[J].材料导报A,2017,31(8):18-23.
[3]肖长江,窦志强.钙钛矿铁电体在超高压下的相变研究进展[J].人工晶体学报,2018(1):194-199.
[4]严峰,包鹏,朱劲松,等.弛豫铁电体材料的内耗研究[J].物理学进展,2006,3(4):378-385.
[5]陈文灏,张睿智,杨璐娜.钙钛矿型过渡金属氧化物界面二维电子态的研究进展[J].材料导报A,2012,26(7):1-6,11.
[6]朱强,周恒为,张超,等.烧结升温速率对钛酸钡陶瓷压电性能的影响[J].人工晶体学报,2017,46(7):1333-1337.
[7]Liu Z H,Xing Z H G,Wang H D,et al. Effect of Zn O on the microstructure and dielectric properties of Ba Ti O3ceramic coatings prepared by plasma spraying[J]. Journal of Alloys and Compounds,2017,727(15):696-705.
[8]宋江,成鹏飞,王秋萍,等.巨介电常数陶瓷Ca Cu3Ti4O3的研究进展[J].材料导报A,2016,30(10):89-94.
[9]Sinclair D C,Adams T B,Morrison F D,et al. Ca Cu3Ti4O12:One-step internal barrier layer capacitor[J]. Appl Phys Lett,2002,80(12):2153-2155.
[10]Mahamoud S,Alkathy K C,James Raju. Effect of Bi and Li co-substituted Sr Ti O3ceramies on structural and dielectric properties[J]. Journal of Material Science:Materials in Electronics,2016,27:8957-8965.
[11]Wang Z J,Cao M H,Yao Z H,et al. Giant permittivity and low dielectric loss of Sr Ti O3ceramics sintered in nitrogen atmosphere[J]. Journal of the European Ceramic Society,2014,34:1755-1760.
[12]唐晓霞,范福康,吕忆农.氧化温度对空气中一次烧成Sr Ti O3晶界层电容器的显微结构及电性能的影响[J].硅酸盐通报,1991(2):10-14.
[13]刘冠芳,周芳,施杰,等.钛酸锶陶瓷烧结的研究进展[J].绝缘材料,2009,42(3):23-26.