自组装制备硫化铜空穴传输层用于钙钛矿太阳能电池
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摘要
采用自组装方法制备了硫化铜作为钙钛矿太阳能电池的空穴传输层。这种方法具有低成本且可大规模制备等优点。采用紫外-可见吸收光谱和紫外光电子能谱对硫化铜薄膜进行了光学性能和能带结构表征;采用原子力显微镜对硫化铜薄膜进行了表面形貌表征;采用Keithley 2410系统测试了器件的电流密度-电压特性。结果表明,硫化铜具有良好的光学透过性、适宜的能级和均匀致密的表面覆盖,采用硫化铜制备的器件具有14.97%的光电转换效率,同时具有可忽略不见的滞后现象。将器件置于空气中14 d后还能保持80%以上的原始效率,表明器件具有良好的稳定性。以上结果表明,采用自组装方法制备的硫化铜薄膜具有优良的性能,对未来钙钛矿太阳能电池的大规模制备及应用提供了一定的借鉴意义。
CuS was prepared by self-assembly method as the hole transport layer(HTL) for perovskite solar cells.This method has the advantages of low-cost and large scale preparation.The optical property and energy band structure of CuS were characterized by ultraviolet-visible absorption spectra and ultraviolet photoelectron spectroscopy measurements.The surface morphology of CuS film was observed by atom force microscopy.The photocurrent density-voltage characteristics were measured by Keithley 2410 source meter.The results showed that CuS had favourable transmissivity,suitable energy level and smooth surface morphology.The perovskite solar cells with CuS as HTL yielded the power conversion efficiency(PCE) of 14.97%with negligible hysteresis.After storing in air for 14 days,the device maintained over 80% of its pristine PCE,indicating excellent stability of the device.These results indicated that CuS films fabricated by self-assembling had superior property,providing a reference for further large scale fabrication and application of perovskite solar cells.
CuS was prepared by self-assembly method as the hole transport layer(HTL) for perovskite solar cells.This method has the advantages of low-cost and large scale preparation.The optical property and energy band structure of CuS were characterized by ultraviolet-visible absorption spectra and ultraviolet photoelectron spectroscopy measurements.The surface morphology of CuS film was observed by atom force microscopy.The photocurrent density-voltage characteristics were measured by Keithley 2410 source meter.The results showed that CuS had favourable transmissivity,suitable energy level and smooth surface morphology.The perovskite solar cells with CuS as HTL yielded the power conversion efficiency(PCE) of 14.97%with negligible hysteresis.After storing in air for 14 days,the device maintained over 80% of its pristine PCE,indicating excellent stability of the device.These results indicated that CuS films fabricated by self-assembling had superior property,providing a reference for further large scale fabrication and application of perovskite solar cells.
引文
[1] Stranks S D,Eperon G E,Grancini G,et al.Electron-hole diffusionlengths exceeding 1 micrometer in an organometal trihalide perovs-kite absorber[J].Science,2013,342(6156):341-344.
[2] Xing G,Mathews N,Sun S,et al.Long-range balanced electron-andhole-transport lengths in organic-inorganic CH3NH3PbI3[J].Science,2013,342(6156):344-347.
[3] Chen Q,De Marco N,Yang Y,et al.Under the spotlight:The organic-inorganic hybrid halide perovskite for optoelectronic applications[J].Nano Today,2015,10(3):355-396.
[4]李雪云,曹晓国,林建春.介观结构钙钛矿太阳能电池的制备研究[J].无机盐工业,2018,50(9):28-31.
[5]胡驰.石墨烯/二氧化钛的制备及钙钛矿太阳能电池性能研究[J].无机盐工业,2018,50(8):49-51.
[6] Kojima A,Teshima K,Shirai Y,et al.Organometal halide perovskitesas visible-light sensitizers for photovoltaic cells[J].Journal of theAmerican Chemical Society,2009,131(17):6050-6051.
[7] Burschka J,Pellet N,Moon S J,et al.Sequential deposition as a routeto high-performance perovskite-sensitized solar cells[J].Nature,2013,499(7458):316-319.
[8] Liu M,Johnston M B,Snaith H J.Efficient planar heterojunction pe-rovskite solar cells by vapor deposition[J].Nature, 2013,501(7467):395-398.
[9] Jeng J Y,Chiang Y F,Lee M H,et al.CH3NH3PbI3perovskite/fullereneplanar-heterojunction hybrid solar cells[J].Advanced Materials,2013,25(27):3727-3732.
[10] Subbiah A S,Halder A,Ghosh S,et al.Inorganic hole conductinglayers for perovskite-based solar cells[J].Journal of Physical Che-mistry Letters,2014,5(10):1748-1753.
[11] Sun W,Ye S,Rao H,et al.Room-temperature and solution-proce-ssed copper iodide as the hole transport layer for inverted planarperovskite solar cells[J].Nanoscale,2016,8(35):15954-15960.
[12] Li J,Jiu T,Tao G H,et al.Manipulating surface ligands of coppersulfide nanocrystals:synthesis,characterization,and applicationto organic solar cells[J].Journal of Colloid&Interface Science,2014,419(4):142-147.
[13] Sankapal B R,Goncalves E,Ennaoui A,et al.Wide band gap p-type windows by CBD and SILAR methods[J].Thin Solid Films,2004,451-452(12):128-132.
[2] Xing G,Mathews N,Sun S,et al.Long-range balanced electron-andhole-transport lengths in organic-inorganic CH3NH3PbI3[J].Science,2013,342(6156):344-347.
[3] Chen Q,De Marco N,Yang Y,et al.Under the spotlight:The organic-inorganic hybrid halide perovskite for optoelectronic applications[J].Nano Today,2015,10(3):355-396.
[4]李雪云,曹晓国,林建春.介观结构钙钛矿太阳能电池的制备研究[J].无机盐工业,2018,50(9):28-31.
[5]胡驰.石墨烯/二氧化钛的制备及钙钛矿太阳能电池性能研究[J].无机盐工业,2018,50(8):49-51.
[6] Kojima A,Teshima K,Shirai Y,et al.Organometal halide perovskitesas visible-light sensitizers for photovoltaic cells[J].Journal of theAmerican Chemical Society,2009,131(17):6050-6051.
[7] Burschka J,Pellet N,Moon S J,et al.Sequential deposition as a routeto high-performance perovskite-sensitized solar cells[J].Nature,2013,499(7458):316-319.
[8] Liu M,Johnston M B,Snaith H J.Efficient planar heterojunction pe-rovskite solar cells by vapor deposition[J].Nature, 2013,501(7467):395-398.
[9] Jeng J Y,Chiang Y F,Lee M H,et al.CH3NH3PbI3perovskite/fullereneplanar-heterojunction hybrid solar cells[J].Advanced Materials,2013,25(27):3727-3732.
[10] Subbiah A S,Halder A,Ghosh S,et al.Inorganic hole conductinglayers for perovskite-based solar cells[J].Journal of Physical Che-mistry Letters,2014,5(10):1748-1753.
[11] Sun W,Ye S,Rao H,et al.Room-temperature and solution-proce-ssed copper iodide as the hole transport layer for inverted planarperovskite solar cells[J].Nanoscale,2016,8(35):15954-15960.
[12] Li J,Jiu T,Tao G H,et al.Manipulating surface ligands of coppersulfide nanocrystals:synthesis,characterization,and applicationto organic solar cells[J].Journal of Colloid&Interface Science,2014,419(4):142-147.
[13] Sankapal B R,Goncalves E,Ennaoui A,et al.Wide band gap p-type windows by CBD and SILAR methods[J].Thin Solid Films,2004,451-452(12):128-132.