有限厚度拓扑绝缘体平板附近原子的自发辐射特性
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  • 英文篇名:Spontaneous Emission Characteristics of Atoms near Topological Insulator Slab with Finite Thickness
  • 作者:曾然 ; 侯金鑫 ; 王驰 ; 李齐良 ; 毕美华 ; 杨国伟 ; 羊亚平
  • 英文作者:Zeng Ran;Hou Jinxin;Wang Chi;Li Qiliang;Bi Meihua;Yang Guowei;Yang Yaping;School of Communication Engineering,Hangzhou Dianzi University;Key Laboratory of Advanced Micro-Structured Materials of Ministry of Education,School of Physics Science and Engineering,Tongji University;
  • 关键词:量子光学 ; 自发辐射 ; 拓扑绝缘体 ; 二能级原子
  • 英文关键词:quantum optics;;spontaneous emission;;topological insulator;;two-level atom
  • 中文刊名:GXXB
  • 英文刊名:Acta Optica Sinica
  • 机构:杭州电子科技大学通信工程学院;同济大学物理科学与工程学院先进微结构材料教育部重点实验室;
  • 出版日期:2018-05-04 15:53
  • 出版单位:光学学报
  • 年:2018
  • 期:v.38;No.438
  • 基金:国家自然科学基金(11574068,61501157,61405051)
  • 语种:中文;
  • 页:GXXB201809044
  • 页数:8
  • CN:09
  • ISSN:31-1252/O4
  • 分类号:337-344
摘要
对有限厚度拓扑绝缘体(TI)平板附近及其腔内二能级原子的自发辐射特性进行了研究。利用并矢格林函数表示偶极子平行和垂直于材料边界时的自发辐射率表达式,通过多次反射理论计算了平板的反射矩阵,对影响自发辐射率的各种因素进行了数值计算与分析。研究结果表明,忽略耗散时,平行偶极子的自发辐射率被抑制,而垂直偶极子的被增强;当板或腔存在耗散时,TI可以有效抑制原子的自发辐射率,使其附近原子在任何偶极方向的衰减均受到抑制。
        The spontaneous emission properties of the two-level atoms placed near a topological insulator(TI)slab with a finite thickness or inside its cavity are investigated.The spontaneous emission rates of the dipole parallel or perpendicular to the material boundary are expressed via the dyadic Green function.The reflection matrix of this slab is calculated based on the multiple reflection theory,and the various factors which influence the spontaneous emission rate are numerically calculated and analyzed.The research results show that,when the dissipation is ignored,the spontaneous emission rate of the parallel dipole is suppressed,however,that of the perpendicular dipole is enhanced.When the dissipation of the slab or its cavity is included,the TI can effectively suppress the spontaneous emission rate of the atoms and make all of the decays of atoms near it along any diploe directions suppressed.
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