21.5%以上效率Panda-TOPCon双面电池技术研究
|
摘要
主要研究可应用于规模化生产的TOPCon(tunnel oxide passivated contact)电池技术,该技术既可改善电池表面钝化又可促进多数载流子传输,进而提升电池的开路电压和填充因子。Panda-TOPCon电池是在英利熊猫(Panda)电池基础上引入TOPCon技术,在研究中对氧化硅/多晶硅叠层(SiO_2/polySi)的表面钝化效果在n型硅片上进行验证,通过优化该结构中SiO_2/polySi掺杂、SiO_2成膜方式以及polySi厚度等,最终制备的Panda-TOPCon电池的开路电压达到676 mV,填充因子达到80%,实现了21.54%的光电转换效率。
In this work we study the tunnel oxide passivated contact(TOPCon)cell technology was researched. The technology can improve the surface passivation of solar cells and accelerate the majority carrier transportation,result to the increasing of the open circuit voltage and the fill factor. In our work,Panda-TOPCon technology introduced TOPCon technology based on Yingli Panda cells. In order to evaluate the surface passivation effect of the SiO_2/polySi layer on n type Si. Through optimizing the doping-porcess of SiO_2/polySi layer,growth methods of SiO_2 layer and the thickness of polySi layer,the champion Panda-TOPCon cell with Eff of 21.54%,Vocof 676 mV,and FF of 80% was obtained.
In this work we study the tunnel oxide passivated contact(TOPCon)cell technology was researched. The technology can improve the surface passivation of solar cells and accelerate the majority carrier transportation,result to the increasing of the open circuit voltage and the fill factor. In our work,Panda-TOPCon technology introduced TOPCon technology based on Yingli Panda cells. In order to evaluate the surface passivation effect of the SiO_2/polySi layer on n type Si. Through optimizing the doping-porcess of SiO_2/polySi layer,growth methods of SiO_2 layer and the thickness of polySi layer,the champion Panda-TOPCon cell with Eff of 21.54%,Vocof 676 mV,and FF of 80% was obtained.
引文
[1]Aberle Armin G.Surface passivation of crystalline silicon solar cells:A review[J].Progress in Photovoltaics:Research and Applications,2000,8(5):473-487.
[2]葛剑,陆红艳,乔琦,等.背钝化太阳电池背面钝化膜与金属化技术的匹配研究[J].太阳能,2014,(5):33-36.[2]Ge jian,Lu Hongyan,Qiao Qi,et al.Study on the matching of passivation and metallization of the back passivation solar cells[J].Solar Energy,2014,(5):33-36.
[3]周国华,施正荣,朱拓,等.太阳电池背表面钝化的研究[J].能源工程,2009,1(1):17-20.[3]Zhou Guohua,Shi Zhengrong,Zhu Tuo,et al.Study on the passivation of solar cell back surface[J].Energy Engineering,2009,1(1):17-20.
[4]杜冲,赵振杰,陈慧君,等.钝化层和铝电极浆料共烧结制备硅太阳电池背电极[J].电子元件与材料,2016,35(11):72-76.[4]Du Chong,Zhao Zhenjie,Chen Huijun,et al.Back surface field structure of silicon solar cell by co-sintering of passivation film and aluminum paste[J].Electronic Components and Materials,2016,35(11):72-76.
[5]Moldovan A,Feldmann F,Kai K,et al.Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2layers grown by photo-oxidation or wet-chemical oxidation in ozonized water[A].42nd IEEE Photovoltaic Specialist Conference(PVSC)[C],New Orleans,Los Angeles,USA,2015.
[6]Feldmann F,Bivour M,Reichel C,et al.Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics[J].Solar Energy Materials&Solar Cells,2014,120(1):270-274.
[7]Geerligs L J,Stodolny M K,Wu Y,et al.LPCVDpolysilicon passivating contacts[A].Workshop on Crystalline Silicon Solar Cells and Modules:Materials and Processes[C],Vail,Co.,USA,2016.
[8]R?mer U,Peibst R,Ohrdes T,et al.Recombination behavior and contact resistance of n+and p+polycrystalline Si/mono-crystalline Si junctions[J].Solar Energy Materials and Solar Cells,2014,131(12):85-91.
[9]Yan D,Cuevas A,Bullock J,et al.Phosphorusdiffused polysilicon contacts for solar cells[J].Solar Energy Materials and Solar Cells,2015,142(11):75-82.
[10]Feldmann F,Steinhauser B,Arya V,et al.Evaluation of topcon technology on large area solar cells[A].33rd European PV Solar Energy Conference and Exhibition(PVSEC)[C],Amsterdam,The Netherlands,2017.
[2]葛剑,陆红艳,乔琦,等.背钝化太阳电池背面钝化膜与金属化技术的匹配研究[J].太阳能,2014,(5):33-36.[2]Ge jian,Lu Hongyan,Qiao Qi,et al.Study on the matching of passivation and metallization of the back passivation solar cells[J].Solar Energy,2014,(5):33-36.
[3]周国华,施正荣,朱拓,等.太阳电池背表面钝化的研究[J].能源工程,2009,1(1):17-20.[3]Zhou Guohua,Shi Zhengrong,Zhu Tuo,et al.Study on the passivation of solar cell back surface[J].Energy Engineering,2009,1(1):17-20.
[4]杜冲,赵振杰,陈慧君,等.钝化层和铝电极浆料共烧结制备硅太阳电池背电极[J].电子元件与材料,2016,35(11):72-76.[4]Du Chong,Zhao Zhenjie,Chen Huijun,et al.Back surface field structure of silicon solar cell by co-sintering of passivation film and aluminum paste[J].Electronic Components and Materials,2016,35(11):72-76.
[5]Moldovan A,Feldmann F,Kai K,et al.Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2layers grown by photo-oxidation or wet-chemical oxidation in ozonized water[A].42nd IEEE Photovoltaic Specialist Conference(PVSC)[C],New Orleans,Los Angeles,USA,2015.
[6]Feldmann F,Bivour M,Reichel C,et al.Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics[J].Solar Energy Materials&Solar Cells,2014,120(1):270-274.
[7]Geerligs L J,Stodolny M K,Wu Y,et al.LPCVDpolysilicon passivating contacts[A].Workshop on Crystalline Silicon Solar Cells and Modules:Materials and Processes[C],Vail,Co.,USA,2016.
[8]R?mer U,Peibst R,Ohrdes T,et al.Recombination behavior and contact resistance of n+and p+polycrystalline Si/mono-crystalline Si junctions[J].Solar Energy Materials and Solar Cells,2014,131(12):85-91.
[9]Yan D,Cuevas A,Bullock J,et al.Phosphorusdiffused polysilicon contacts for solar cells[J].Solar Energy Materials and Solar Cells,2015,142(11):75-82.
[10]Feldmann F,Steinhauser B,Arya V,et al.Evaluation of topcon technology on large area solar cells[A].33rd European PV Solar Energy Conference and Exhibition(PVSEC)[C],Amsterdam,The Netherlands,2017.