MEMS高g加速度传感器高过载能力的优化分析
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摘要
通过设计一个量程为15万克、抗过载为20万克的抗高过载能力的MEMS加速度传感器,分析了多种传感器的利弊,选择压阻式加速度传感器作为研究对象。创建该加速度传感器结构的力学模型,然后在模型上分析其结构的应力、频率及阻尼进行分析,完成结构参数的优化及确定。在ANSYS环境下,通过对结构的静态和模态仿真分析了该传感器的测量范围、安全系数、抗过载性能、频率响应及响应时间,确保该结构在20万克过载环境下可以安全可靠的工作。同时,根据静态应力仿真结果进行压敏电阻位置及结构参数的优化[1]。
The main task of the paper is designing a MEMS accelerometer,which can endure high overload environment with main index that includes measuring range 150000 g and anti-overload 200000 g. By comparing various kinds of sensors,the piezoresistive accelerometer is chosen as the research object. Firstly,based on the mechanic model of the structure,the analysis of stress,frequency and optimization of the structure is completed,and then the parameter of the structure is made. In addition,under the ANSYS environment,the measurement range,safety factor,anti-overload performance,frequency response and response time of the sensor are analyzed by static and modal simulation to ensure that the structure works safely and reliably in a 200000 g overload environment.Simultaneity,the placement and structure parameter of piezoresistors are optimized by the static stress simulation result.
The main task of the paper is designing a MEMS accelerometer,which can endure high overload environment with main index that includes measuring range 150000 g and anti-overload 200000 g. By comparing various kinds of sensors,the piezoresistive accelerometer is chosen as the research object. Firstly,based on the mechanic model of the structure,the analysis of stress,frequency and optimization of the structure is completed,and then the parameter of the structure is made. In addition,under the ANSYS environment,the measurement range,safety factor,anti-overload performance,frequency response and response time of the sensor are analyzed by static and modal simulation to ensure that the structure works safely and reliably in a 200000 g overload environment.Simultaneity,the placement and structure parameter of piezoresistors are optimized by the static stress simulation result.
引文
[1]石云波,李平,朱正强,等. MEMS高g加速度传感器高过载能力的优化研究[J].振动与冲击,2011,30(7):271-274.
[2]李策,石云波,刘欣,等.灌封技术对MEMS高g加速度传感器性能影响研究[J].传感器与微系统,2015(4):22-26.
[3]杨尊先,李昕欣,于映,等.阻尼介质温度对MEMS高量程加速度传感器动态输出特性的影响[J].仪表技术与传感器,2009(5):1-4.
[4]谌福华,高智浩,王明伟.封装对高量程MEMS加速度传感器性能的影响[J].电子技术与软件工程,2017(7):86-86.
[2]李策,石云波,刘欣,等.灌封技术对MEMS高g加速度传感器性能影响研究[J].传感器与微系统,2015(4):22-26.
[3]杨尊先,李昕欣,于映,等.阻尼介质温度对MEMS高量程加速度传感器动态输出特性的影响[J].仪表技术与传感器,2009(5):1-4.
[4]谌福华,高智浩,王明伟.封装对高量程MEMS加速度传感器性能的影响[J].电子技术与软件工程,2017(7):86-86.