漂移阶跃恢复二极管研究进展
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摘要
简单介绍了漂移阶跃恢复二极管(DSRD)的物理特性以及工作机理。介绍了DSRD开关堆叠技术及两种典型电路,并分析其工作机理,且对比了多种半导体开关的参数。主要阐述了国内外漂移阶跃恢复二极管发展历程以及在脉冲功率技术中的应用。随着新材料的发展及新工艺、新结构的创新,展望了DSRD的发展方向。
The physical characteristics and working mechanism of drift step recovery diodes(DSRDs)are briefly presented.The stacking technology of DSRD switches and two typical circuits are introduced,and their working mechanism is analyzed.The parameters of various semiconductor switches are compared.The development of DSRDs at home and abroad and their applications in pulse power technology are described.With the development of new materials and the innovation of new technology and new structure,the development direction of DSRDs is prospected.
The physical characteristics and working mechanism of drift step recovery diodes(DSRDs)are briefly presented.The stacking technology of DSRD switches and two typical circuits are introduced,and their working mechanism is analyzed.The parameters of various semiconductor switches are compared.The development of DSRDs at home and abroad and their applications in pulse power technology are described.With the development of new materials and the innovation of new technology and new structure,the development direction of DSRDs is prospected.
引文
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[16]张玲,周斌,谢义方,等.基于漂移阶跃恢复二极管的超宽带探地雷达发射技术[J].强激光与粒子束,2009,21(12):77-81.
[17]梁勤金,石小燕,曹晓阳.一种快速离化波开关及其在高压脉冲源中的应用[J].电讯技术,2010,50(5):68-71.
[18]刘忠山,杨勇,马红梅,等.新型亚纳秒高功率半导体开关器件[J].半导体技术,2009,34(6):557-559.
[19]梁勤金,邓晓磊,石小燕,等.新型半导体开关高压电磁脉冲产生技术[J].强激光与粒子束,2012,24(2):497-500.
[20]周斌,刘丽华,方广有.一种新型的漂移阶跃恢复二极管脉冲源设计[J].电子设计工程,2013,21(24):178-183.
[21]王亚杰,何鹏君,荆晓鹏.基于DSRD陡前沿固态脉冲源研制[J].火控雷达技术,2017,46(3):50-54.
[22]刘忠山,杨勇,崔占东,等.新型快速高功率半导体开关器件及其应用技术[J].电力电子器件设计、制造和工艺技术,2010:40-47.
[2]肖建平.DSRD高功率超宽谱脉冲源及其功率合成初探[J].信息对抗技术,2007,7(4):15-21.
[3]吴家霖,刘英坤.高功率半导体开关器件DSRD的研究进展[J].微纳电子技术,2015,51(4):211-215.
[4]KARDO-SYSOEV A F.New Power Semiconductor Devices for Generation of Nano-and Subnanosecond Pulses[C].Taylor J D Ultra-Wideband Rader Technology,2001:205-290.
[5]BRYLEVSKY V I,EFANOV V M,KARDO-SYSOEVA F,et al.Power Nanosecond Semiconductor Opening Plasma Switches[C].Proceedings of the 11th IEEE International Pulsed Power Conference,USA:Baltimore,1997,1:420-424.
[6]EFANOV A F,KARDO-SYSOEV A F,LARIONOVM A,et al.Power Semiconductor 80kV Nanosecond Ppulser[C].Proceedings of the 11th IEEE International Pulsed Power Conference,USA:Baltimore,1997:985-987.
[7]KOZLOV V A,SIMIMOVA I A,MORYAKOVA S A,et al.New Generation of Drift Step Recovery Diodes(DSRD)for Sub-nanosecond Switching and High Repetition Rate Operation[J].IEEE,2002:441-444.
[8]MIN B D,KIM J H,PAVLOVA E,et al.A Compactinductive Type Pulse Generator Using Diodes as Opening Switch[J].IEEE,2005:1364-1367.
[9]LYUBLINSKY A G,KOROTKOV S V,ARISTOV YV,et al.Pulse Power Nanosecond-Range DSRD-Based Generator for Electric Discharge Technologies[J].IEEE Transactions on Plasma Science,2013,41(10):2625-2629.
[10]KOROTKOV S V,ARISTOV Yu V,ZHMODIKOV AL,et al.A Modular Drift Step Recovery Diode Generator for Nanosecond Pulse Technologies[J].Electronics and Ratio Engineering,2015,59(3):356-361.
[11]ILYIN V A,AFANASVEV A V,IVANOV B V.et al.High-Voltage Ultra-fast Pulse Diode Stack Based on4H-SiC[J].Materials Science Forum,858:786-789.
[12]BORIS V IVANOV,ARTEM A SMIMOV,SERGEYA SHEVCHENKO.A Study of Charge Losses in 4H-SiC Drift Step Recovery Diodes(DSRD)[J].IEEE,2016:51-52.
[13]NIKOO M S,SEYED MORAD-ALI HASHEMI,MA-JID OLAD DILMAGHNIAN.DSRD-Based High-Power Repetitive Short-Pulse Generator Containing GDT:Theory and Experiment[J].IEEE Transactions on Plasma Science,2017,45(8):2341-2350.
[14]贾望屹,王敬东,孔波,等.新器件雷达发射机技术的研究[J].火控雷达技术,2004,33(3):17-23.
[15]梁勤金,石小燕,冯仕云,等.高功率半导体开关DSRD在UWB雷达中的应用[J].现代雷达,2005,27(5):69-71.
[16]张玲,周斌,谢义方,等.基于漂移阶跃恢复二极管的超宽带探地雷达发射技术[J].强激光与粒子束,2009,21(12):77-81.
[17]梁勤金,石小燕,曹晓阳.一种快速离化波开关及其在高压脉冲源中的应用[J].电讯技术,2010,50(5):68-71.
[18]刘忠山,杨勇,马红梅,等.新型亚纳秒高功率半导体开关器件[J].半导体技术,2009,34(6):557-559.
[19]梁勤金,邓晓磊,石小燕,等.新型半导体开关高压电磁脉冲产生技术[J].强激光与粒子束,2012,24(2):497-500.
[20]周斌,刘丽华,方广有.一种新型的漂移阶跃恢复二极管脉冲源设计[J].电子设计工程,2013,21(24):178-183.
[21]王亚杰,何鹏君,荆晓鹏.基于DSRD陡前沿固态脉冲源研制[J].火控雷达技术,2017,46(3):50-54.
[22]刘忠山,杨勇,崔占东,等.新型快速高功率半导体开关器件及其应用技术[J].电力电子器件设计、制造和工艺技术,2010:40-47.