电流对不同厚度GaN基白光LED可靠性的影响及光电特性研究
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摘要
制备不同厚度GaN基白光LED芯片为了研究不同厚度的芯片可靠性以及电流对光电特性的影响,应用了加速老化以及积分球测试的方法,对LED进行了电流应力的老化试验和光电性能测试,分析了光电参数在老化过程中的变化情况。实验结果显示,所有的芯片随着电流的加大LED出光的相关色温上升,红色比减少;随着GaN基白光LED芯片厚度增加,峰值波长发生蓝移现象而且光通量衰减较快,在短期老化后的结果更为明显。通过对光谱曲线的数据处理,从理论上分析了峰值波长、相关色温和光通量随芯片厚度变化的原因。
Preparation of different thickness of GaN base to study the different thickness of white LED chip chip reliability and the influence of current on the photoelectric characteristic,application of accelerated aging and the method of integrating sphere test current stress aging test for LED and optical performance test,analysis of the photoelectric parameter changes in the aging process The experimental results showed that all the chips with the current increase LED light correlated color temperature rise,red than reducing; As GaN base white LED chip thickness increases,the peak wavelength blue shift phenomenon and luminous flux decay quickly,in the short term result of aging Through data processing of spectrum curve,peak wavelength moderate correlated color luminous flux are analyzed theoretically the cause of the change with the chip thickness
Preparation of different thickness of GaN base to study the different thickness of white LED chip chip reliability and the influence of current on the photoelectric characteristic,application of accelerated aging and the method of integrating sphere test current stress aging test for LED and optical performance test,analysis of the photoelectric parameter changes in the aging process The experimental results showed that all the chips with the current increase LED light correlated color temperature rise,red than reducing; As GaN base white LED chip thickness increases,the peak wavelength blue shift phenomenon and luminous flux decay quickly,in the short term result of aging Through data processing of spectrum curve,peak wavelength moderate correlated color luminous flux are analyzed theoretically the cause of the change with the chip thickness
引文
[1]陈国杰,余汉铭,李斌,周有平.大功率白光LED恒压驱动与恒流驱动下温度特性的实时测量[J].大学物理,2011,30(8):40-42.
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[12]郝宏刚,牛炎楠,陈谱望,杜志华.一种基于白光LED的数字传输设计与实现[J].光通信技术,2017,41(4):20-23.
[13]蔡雯君,张哲娟,孙卓.荧光粉发光层对白光LED平面光源发光特性的影响[J].半导体光电,2017,38(1):36-39.
[14]胡奕彬,刘士伟,刘思远,等.双通道PWM的冷暖白光LED混色模型研究[J].光电子·激光,2015,26(11):2089-2095.
[15]宋其岩,赵阳,刘福有,杨婧.基于大功率白光LED的可见光通信[J].现代电子技术,2015,38(13):39-41,45.
[16]高小钦,卓宁泽,王海波,等.半导体量子点在白光LED器件上的应用研究[J].物理学报,2015,64(13):396-401.
[17]朱三妹,张文.白光LED封装材料的光学特性对光通量的影响[J].电子元件与材料,2015,34(4):22-25,31.
[2]陈超,夏明飞,杨鸿儒,等. In Ga N基白光LED光谱特征和结温相关性研究[J].应用光学,2011,32(5):1032-1036.
[3]毕长栋,张方辉,孙立蓉,等.有机荧光材料DCJTB对白光LED发光特性的影响[J].光电子.激光,2011,22(11):1660-1662.
[4]蔡静. 1W大功率蓝光LED和白光LED光电特性研究[J].科学技术与工程,2012,12(28):7165-7169.
[5] SENAWIRATNE J,CHATTERJEE A,DETCHPROHM T.Junction temperature, spectral shift, and efficiency in Ga In N—based blue and green light emitting diodes[J].Thin Solid Films,2010,518(6):173-180.
[6]刘立明,郑晓东. LED结温与光谱特性关系的测量[J].光子学报,2009,38(9):1069-1075.
[7]林亮,陈志忠,童玉珍,等. Ga N基大功率倒装焊蓝光LED的I.V特性研究阴[J].光电器件,2007,28(6):766-769.
[8]于慧媛,孙文良,吴江等.基于白光LED的日光光谱拟合及混光设计[J].大连工业大学学报,2018,3704):296-300.
[9]王志斌,董伟,任英,武等.可见光通信中的白光LED非线性噪声分析[J].发光学报,2018,39(5):745-750.
[10]于莉媛,杨磊,田海涛,等.电子束辐照对Ga N基白光LED发光性能的影响[J].固体电子学研究与进展,2018,38(2):127-131.
[11]刘峰,潘正伟,张家骅,王笑军.基于荧光粉光转换的白光LED固态照明[J].中国稀土学报,2017,35(2):171-182.
[12]郝宏刚,牛炎楠,陈谱望,杜志华.一种基于白光LED的数字传输设计与实现[J].光通信技术,2017,41(4):20-23.
[13]蔡雯君,张哲娟,孙卓.荧光粉发光层对白光LED平面光源发光特性的影响[J].半导体光电,2017,38(1):36-39.
[14]胡奕彬,刘士伟,刘思远,等.双通道PWM的冷暖白光LED混色模型研究[J].光电子·激光,2015,26(11):2089-2095.
[15]宋其岩,赵阳,刘福有,杨婧.基于大功率白光LED的可见光通信[J].现代电子技术,2015,38(13):39-41,45.
[16]高小钦,卓宁泽,王海波,等.半导体量子点在白光LED器件上的应用研究[J].物理学报,2015,64(13):396-401.
[17]朱三妹,张文.白光LED封装材料的光学特性对光通量的影响[J].电子元件与材料,2015,34(4):22-25,31.