氮化铝面内伸缩模态谐振器的研究现状
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摘要
综述了氮化铝面内伸缩模态的射频MEMS谐振器。氮化铝面内伸缩模态谐振器(contour-mode resonator,CMR)利用了氮化铝薄膜的压电效应,由器件的机械谐振再通过机电转化实现谐振功能,基本结构为电极层-氮化铝层-电极层。当前研究的两种典型的器件结构为方形振子梳齿电极结构和圆盘振子电容式结构。概述了氮化铝CMR的制备工艺,并重点介绍了磁控溅射法生长薄膜和ICP刻蚀等主要工艺环节。分别对氮化铝CMR的谐振频率、品质因子、温度稳定性和动态电阻等主要性能参数进行了理论分析,针对谐振器各参数的提升给出了具体的改进方向,同时讨论了某些性能的提升所带来的负面影响。氮化铝CMR具备面内集成的优点,随着器件频率的提高,将在无线通信领域具有广阔的应用前景。
The AlN contour-mode RF MEMS resonators are reviewed.The piezoelectric effect of the AlN thin film is used in the contour-mode resonator(CMR).The resonant function is achieved by the mechanical resonance and electromechanical conversion.The basic structure is electrode layer-AlN layer-electrode layer.Two typical structures of the current contour-mode resonators are introduced,i.e.the square oscillator with the comb electrode structure and the disc oscillator with the capacitive structure.Then the fabrication process of the CMR is presented, with the emphasis on some major steps,such as magnetron sputtering for the growth of the thin film and ICP etching.The theoretical analysis for the major parameters of the CMR,such as the resonant frequency,quality factor,temperature stability and motional resistance are made respectively.The specific improvement directions of the parameters for the CMR are given.Meanwhile,some negative impacts of the improvement for some parameters are discussed.Owing to the advantage of the integration,with the enhancement of the frequency,the AlN CMR has wide application prospects in the field of wireless communications.
The AlN contour-mode RF MEMS resonators are reviewed.The piezoelectric effect of the AlN thin film is used in the contour-mode resonator(CMR).The resonant function is achieved by the mechanical resonance and electromechanical conversion.The basic structure is electrode layer-AlN layer-electrode layer.Two typical structures of the current contour-mode resonators are introduced,i.e.the square oscillator with the comb electrode structure and the disc oscillator with the capacitive structure.Then the fabrication process of the CMR is presented, with the emphasis on some major steps,such as magnetron sputtering for the growth of the thin film and ICP etching.The theoretical analysis for the major parameters of the CMR,such as the resonant frequency,quality factor,temperature stability and motional resistance are made respectively.The specific improvement directions of the parameters for the CMR are given.Meanwhile,some negative impacts of the improvement for some parameters are discussed.Owing to the advantage of the integration,with the enhancement of the frequency,the AlN CMR has wide application prospects in the field of wireless communications.
引文
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[26]BANNON F D,CLARK J R,NGUYEN C T C.High-Q HF microelectromechanical filters[J].IEEE Journal of Solid-State Circuits,2000,35(4):512-526.
[27]RINALDI M,TAZZOLI A,PIAZZA G.Ovenized high frequency oscillators based on aluminum nitride contour-mode MEMS resonators[C]//Proceedings of the IEEE International Electron Devices Conference.Washington,DC,USA,2011:20.2.1-20.2.4.
[28]HUNG L W,YEN T T,NGUYEN C T C,et al.High-Q capacitive-piezoelectric AlN Lamb wave resonators[C]//Proceedings of the 26thIEEE International Conference on Micro Electro Mechanical Systems.Taiwan,China,2013:114-117.
[29]HUNG L W,NGUYEN C T C.Capacitive-piezo transducers for higher Q contour-mode AlN resonators at 1.2 GHz[C]//Proceedings of the Solid-State Sensor Actuator Workshop.South Carolina,USA,2010:463-466.
[30]LIN C M,YEN T T,LAI Y J,et al.Temperature-compensated aluminum nitride Lamb wave resonators[J].IEEE Transactions on Ultrasonics,Ferroelectrics and Frequency Control,2010,57(3):524-532.
[31]RINALDI M,TAZZOLI A,SEGOVIA FERNANDEZ J,et al.High power and low temperature coefficient of frequency oscillator based on a fully anchored and oxide compensated AlN contour-mode MEMS resonator[C]//Proceedings of the 25thIEEE International Conference on Micro Electro Mechanical Systems.Paris,France,2012:696-699.
[32]LUDWIG R,BRETCHKO P.RF circuit design:theory and applications[M].北京:电子工业出版社,2005:53-55.
[2]SANCHEZROJAS J L,HERNANDO J,ABABNEH A,et al.Advanced determination of piezoelectric properties of AlN thin films on silicon substrates[C]//Proceedings of the IEEE Ultrasonics Conference.Beijing,China,2008:903-906.
[3]XIONG J,GU H S,HU K,et al.Influence of substrate metals on the crystal growth of AlN films[J].International Journal of Minerals,Metallurgy,and Materials,2010,17(1):98-103.
[4]PIAZZA G,STEPHANOU P J,PISANO A P.Piezoelectric aluminum nitride vibrating contour-mode MEMS resonators[J].Journal of Microelectromechanical Systems,2006,15(6):1406-1418.
[5]RINALDI M,ZUNIGA C,ZUO C J,et al.Super high frequency two-port AlN contour-mode resonators for RF applications[J].IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control,2010,57(1):38-45.
[6]RINALDI M,ZUNIGA C,PIAZZA G.5-10 GHz AlN contour-mode nanoelectromechanical resonators[C]//Proceedings of the 22nd International Conference on Micro Electro Mechanical Systems(MEMS).Sorrento,Italy,2009:916-919.
[7]RINALDI M,ZUO C,van der SPIEGEL J,et al.Reconfigurable 4-frequency CMOS oscillator based on AlN contour-mode MEMS resonators[C]//Proceedings of the IEEE International Ultrasonics Symposium.San Diego,CA,USA,2010:1494-1497.
[8]RINALDI M,PIAZZA G.Effects of volume and frequency scaling in AlN contour mode NEMS resonators on oscillator phase noise[C]//Proceedings of the IEEE International Frequency Control and the European Frequency and Time Forum(FCS).San Fransisco,CA,USA,2011:1-5.
[9]RINALDI M,HUI Y,ZUNIGA C,et al.High frequency AlN MEMS resonators with integrated nano hot plate for temperature controlled operation[C]//Proceedings of the 66th IEEE International Frequency Control Symposium.Baltimore,MD,USA,2012:355-359.
[10]HUNG L W,NGUYEN C C.Capacitive-piezoelectric AlN resonators with Q>12 000 micro electro mechanical systems(MEMS)[C]//Proceedings of the 24th IEEE International Conference on Micro Electro Mechanical Systems(MEMS).Cancun,Mexico,2011:173-176.
[11]LIFSHITZ R,ROUKES M L.Thermoelastic damping in micro-and nanomechanical systems[J].Physical Review:B,2000,61(8):5600-5609.
[12]KAMOHARA T,AKIYAMA M,UENO N,et al.Influence of aluminum nitride interlayers on crystal orientation and piezoelectric property of aluminum nitride thin films prepared on titanium electrodes[J].Thin solid films,2007,515(11):4565-4569.
[13]IRIARTE G F,BJURSTROM J,WESTLINDER J,et al.Synthesis of c-axis-oriented AlN thin films on high-conducting layers:Al,Mo,Ti,TiN,and Ni[J].IEEE Transactions on Ultrasonics,Ferroelectrics and Frequency Control,2005,52(7):1170-1174.
[14]ABABNEH A,SCHMID U,HERNANDO J,et al.The influence of sputter deposition parameters on piezoelectric and mechanical properties of AlN thin films[J].Materials Science and Engineering:B,2010,172(3):253-258.
[15]门海泉,周灵平,肖汉宁.AlN薄膜择优取向生长机理及制备工艺[J].人工晶体学报,2005,34(6):1146-1153.
[16]KAR J,BOSE G,TULI S.Influence of nitrogen concentration on grain growth,structural and electrical properties of sputtered aluminum nitride films[J].Scripta Materialia,2006,54(10):1755-1759.
[17]佟洪波,柳青.反应溅射制备AlN薄膜靶中毒机制的研究[J].真空科学与技术学报,2011,31(6):739-742.
[18]PENZA M,de RICCARDIS M,MIRENGHI L,et al.Low temperature growth of RF reactively planar magnetron-sputtered AlN films[J].Thin Solid Films,1995,259(2):154-162.
[19]RIEKKINEN T,NURMELA A,MOLARIUS J,et al.Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators[J].Thin Solid Films,2009,517(24):6588-6592.
[20]BLIZNETSOV V,BIN JOHARI B H,CHENTIR M T,et al.Improving aluminum nitride plasma etch process for MEMS applications[J].Journal of Micromechanics and Microengineering,2013,23(11):117001-1-117001-5.
[21]SHAH A P,LASKAR M R,RAHMAN A A,et al.Inductively coupled plasma reactive ion etching of III-nitride semiconductors[C]//Proceedings of the AIP Conference.Bombay,India,2012:494-498.
[22]CHO H,VARTULI C,DONOVAN S,et al.Comparison of inductively coupled plasma Cl2and Cl4/H2etching of III-nitrides[J].Journal of Vacuum Science and Technology:A,1998,16(3):1631-1635.
[23]HAHN Y,HAYS D,DONOVAN S,et al.Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN,InN,and AlN[J].Journal of Vacuum Science and Technology:A,1999,17(3):768-773.
[24]SHUL R,WILLISON C,BRIDGES M,et al.Selective inductively coupled plasma etching of group-III nitrides in Cl2-and BCl3-based plasmas[J].Journal of Vacuum Science and Technology:A,1998,16(3):1621-1626.
[25]RINALDI M,ZUO C,van der SPIEGEL J,et al.Reconfigurable CMOS oscillator based on multifrequency AlN contourmode MEMS resonators[J].IEEE Transactions on Electron Devices,2011,58(5):1281-1286.
[26]BANNON F D,CLARK J R,NGUYEN C T C.High-Q HF microelectromechanical filters[J].IEEE Journal of Solid-State Circuits,2000,35(4):512-526.
[27]RINALDI M,TAZZOLI A,PIAZZA G.Ovenized high frequency oscillators based on aluminum nitride contour-mode MEMS resonators[C]//Proceedings of the IEEE International Electron Devices Conference.Washington,DC,USA,2011:20.2.1-20.2.4.
[28]HUNG L W,YEN T T,NGUYEN C T C,et al.High-Q capacitive-piezoelectric AlN Lamb wave resonators[C]//Proceedings of the 26thIEEE International Conference on Micro Electro Mechanical Systems.Taiwan,China,2013:114-117.
[29]HUNG L W,NGUYEN C T C.Capacitive-piezo transducers for higher Q contour-mode AlN resonators at 1.2 GHz[C]//Proceedings of the Solid-State Sensor Actuator Workshop.South Carolina,USA,2010:463-466.
[30]LIN C M,YEN T T,LAI Y J,et al.Temperature-compensated aluminum nitride Lamb wave resonators[J].IEEE Transactions on Ultrasonics,Ferroelectrics and Frequency Control,2010,57(3):524-532.
[31]RINALDI M,TAZZOLI A,SEGOVIA FERNANDEZ J,et al.High power and low temperature coefficient of frequency oscillator based on a fully anchored and oxide compensated AlN contour-mode MEMS resonator[C]//Proceedings of the 25thIEEE International Conference on Micro Electro Mechanical Systems.Paris,France,2012:696-699.
[32]LUDWIG R,BRETCHKO P.RF circuit design:theory and applications[M].北京:电子工业出版社,2005:53-55.