毫秒激光与硅靶相互作用靶材后表面温度的干涉法测量
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摘要
研究了毫秒激光与硅靶相互作用后表面的蒸气速度和后表面温度变化。由实验得到了脉宽为1 ms、能量密度为5.82×10~3J/cm~2的激光与厚度为0.3 mm的硅靶相互作用过程的序列干涉图。观察该序列干涉图发现,激光辐射466μs时,硅靶的前表面和后表面均产生了气化现象;激光作用699μs后,硅靶的前表面和后表面均有液态喷溅物出现。通过相邻两幅干涉图的干涉条纹位置变化及时间间隔,计算得到了激光辐射466~699μs时后表面蒸气的膨胀速度为20.47±0.08 m/s。根据Rankine-Hugoniot关系、气体动力学理论以及Knudsen层的质量、动量、能量守恒方程,计算得到硅靶后表面附近的蒸气压强。考虑物质蒸气压强满足克拉伯龙—克劳修斯方程,计算得到激光作用466~699μs时硅靶后表面的平均温度为3551.2±2 K,计算结果与文献基本吻合。最后,根据计算的温度分析了熔融喷溅的产生机理。
The steam velocity and temperature variations of the silicon plate after its interaction with the millisecond laser are studied. Sequence interference pictures of interaction between the 1 ms pulse width and 5. 82 × 10~3 J/cm~2 energy density laser and the 0. 3 mm thickness silicon plate areobtained by experiments. These sequence interference pictures show that,after the silicon plate being irradiated by 466 μs,the gasification phenomenon is produced on the front and the back surfaces of the silicon plate; and after the silicon plate being irradiated 699 μs,there are melt splashes producing on the front and back surfaces of the silicon plate. According to the position change and the time interval of the interference fringes of two adjacent interference pictures,the gasification rate of the steam on the back surface after 466 ~ 699 μs laser irradiation is calculated( 20.47±0.08 m/s).By using Rankine-Hugoniot relations,the kinetic theory of gases and the mass,momentum,energy conservation equation of the Knudsen layer,the vapor pressure of the back surface is obtained; And by the Clapeyron-Clausius equation,the temperature of the back surface of the silicon plate after466 ~ 699 μs laser irradiation is calculated( 3551.2±2 K),and the result is consistent with that of the literature. Finally,the mechanism of molten splash is analyzed through the calculated temperature.
The steam velocity and temperature variations of the silicon plate after its interaction with the millisecond laser are studied. Sequence interference pictures of interaction between the 1 ms pulse width and 5. 82 × 10~3 J/cm~2 energy density laser and the 0. 3 mm thickness silicon plate areobtained by experiments. These sequence interference pictures show that,after the silicon plate being irradiated by 466 μs,the gasification phenomenon is produced on the front and the back surfaces of the silicon plate; and after the silicon plate being irradiated 699 μs,there are melt splashes producing on the front and back surfaces of the silicon plate. According to the position change and the time interval of the interference fringes of two adjacent interference pictures,the gasification rate of the steam on the back surface after 466 ~ 699 μs laser irradiation is calculated( 20.47±0.08 m/s).By using Rankine-Hugoniot relations,the kinetic theory of gases and the mass,momentum,energy conservation equation of the Knudsen layer,the vapor pressure of the back surface is obtained; And by the Clapeyron-Clausius equation,the temperature of the back surface of the silicon plate after466 ~ 699 μs laser irradiation is calculated( 3551.2±2 K),and the result is consistent with that of the literature. Finally,the mechanism of molten splash is analyzed through the calculated temperature.
引文
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[22]张梁,倪晓武,陆建.长脉冲激光与硅相互作用气化过程的数值模拟[J].光学精密工程,2011(2):837-844.Zhang Liang,Ni Xiaowu,Lu Jian,Numerical simulation of vaporization effect of long pilsed laser interaction with silicon[J].Optics and Precision Engineering,2011(2):837-844.
[2]冯爱新,庄绪华,薛伟.1064 nm、532 nm、355 nm波长脉冲激光辐照多晶硅损伤特性研究[J].红外与激光工程,2015(2):461-465.Feng Aixin,Zhuang Xuhua,Xue Wei.Damage characteristics of polysilicon under wavelengths of 1064 nm,532 nm and 355 nm laser irradiation[J].Infrared and Laser Engineering,2015(2):461-465.
[3]戴罡,陆建,刘剑.使用长脉冲高能激光对石英玻璃打孔[J].光学精密工程,2011(2):380-386.Dai Gang,Lu Jian,Liu Jian.Experiment of long pulse high energy laser drilling on silica glass[J].Optics and Precision Engineering,2011(2):380-386.
[4]齐立涛.真空条件下不同波长固体激光烧蚀单晶硅的实验研究[J].中国光学,2014(3):442-448.Qi Litao.Different wavelength solid-state laser ablation of silicon wafer in vacuum[J].Chinese Optics,2014(3):442-448.
[5]汤伟,吉桐伯,郭劲.高重频CO2激光损伤Hg Cd Te晶体的数值分析[J].中国光学,2013(5):736-742.Tang Wei,Ji Tongbo,Guo Jin.Numerical analysis of Hg Cd Te crystal damaged by high repetition frequency CO2laser[J].Chinese Optics,2013(5):736-742.
[6]秦渊,毕娟,倪晓武,毫秒激光金属打孔的解析和实验[J].光学精密工程,2011(2):340-347.Qin Yuan,Bi Juan,Ni Xiaowu,Analysis and experiment on millisecond pulsed laser drilling of metals[J].Optics and Precision Engineering,2011(2):340-347.
[7]Sha T,Wu Benxin,Yun Z,et al.Thermal modeling and experimental study of infrared nanosecond laser ablation of silicon[J].Journal of Applied Physics,2009,106:123507.
[8]Lu Quanming,Mao S S,Mao Xianglei,et al.Theory analysis of wavelength dependence of laser-induced phase explosion of silicon[J].Journal of Applied Physics,2008,104:083301.
[9]Schneider M,Berthe L,Fabbro R,et al.Gas investigation for laser drilling[J].Journal of Laser Applications,2007,19(3):165-173.
[10]Voisey K T,Kudesia S S,Rodden W S O,et al.Melt ejection during laser drilling of metals[J].Materials Science Engineering,2003,A356:414-424.
[11]He X,Norris J T,Fuerschbach P W,et al.Liquid metal expulsion during laser spot welding of 304 stainless steel[J].Journal of Physics D(Applied Physics),2006,39(3):525-534.
[12]He X,Debroy T,Fuerschbach P W.Alloying element vaporization during laser spot welding of stainless steel[J].Journal of Physics D(Applied Physics),2003,36(23):3079-3088.
[13]Cho J H,Na S J.Implementation of real-time multiple reflection and Fresnel absorption of laser beam in keyhole[J].Journal of Physics D(Applied Physics),2006,39(24):5372-5379.
[14]Song K H,Xu Xianfan.Explosive phase transformation in excimer laser ablation[J].Applied Surface Scicence,1998,127/129:111-116.
[15]Yilbas B S,Sami M.Liquid ejection and possible nucleate boiling mechanisms in relation to the laser drilling process[J].Journal of Physics D(Applied Physics),1997,30(14):1996-2005.
[16]Ki H,Mohanty P S,Mazumder J.Modelling of high-density laser-material interaction using fast level set method[J].Journal of Physics D(Applied Physics),2001,34(3):364-372.
[17]Doubenskaia M,Smurov I.Surface temperature evolution in pulsed laser action of millisecond range[J].Applied Surface Science,2006,252:4472-4476.
[18]Ignatiev M,Smurov I Y,Flamant G,et al.Twodimensional resolution pyrometer for real-time monitoring of temperature image in laser materials processing[J].Applied Surface Science,1997,109/110:498-508.
[19]Kasparov K N,Ivlev G D,Belozerova L I,et al.Photoemission measurements of temperature in pulsed laser heating of various materials[J].Journal of Engineering Physics and Thermophysics,2012,85(1):210-215.
[20]Aden M,Beyer E,Herziger G.Laser-induced vaporisation of metal as a Riemann problem[J].Journal of Physics D(Applied Physics),1990,23(6):655-661.
[21]陆建,倪晓武,贺安之.激光与材料相互作用物理学[M].北京:机械工业出版社,1996.
[22]张梁,倪晓武,陆建.长脉冲激光与硅相互作用气化过程的数值模拟[J].光学精密工程,2011(2):837-844.Zhang Liang,Ni Xiaowu,Lu Jian,Numerical simulation of vaporization effect of long pilsed laser interaction with silicon[J].Optics and Precision Engineering,2011(2):837-844.