氧分压对NiO薄膜特性的影响
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摘要
采用JGP-300型超高真空磁控溅射镀膜机在蓝宝石衬底上制备了Ni O薄膜。通过X射线衍射(XRD)仪、原子力显微镜(AFM)、紫外-可见分光光度计(UV-VIS)、霍尔(Hall)测试,研究了氧分压对Ni O薄膜晶体结构、表面形貌、光学特性和电学特性的影响。研究结果表明:Ni O薄膜具有单一的(111)衍射峰。当氧分压为60%时,Ni O薄膜具有较好的结晶性能。随着氧分压的升高,Ni O薄膜表面逐渐变光滑。由(αhν)2-hν曲线得到Ni O薄膜的禁带宽度为3. 60～3. 77 e V。所有Ni O薄膜都具有良好的p型导电特性,空穴载流子浓度为5. 45×10~(17)～2. 16×10~(19)cm~(-3)。
NiO thin films were prepared on sapphire substrates by using a JGP-300 ultra-high vacuum magnetron sputtering coating apparatus. The effect of oxygen partial pressure on the crystal structure,surface topography,optical properties and electrical properties of Ni O films were studied by using X-ray diffractometer( XRD),atomic force microscope( AFM),ultraviolet spectrophotometer( UV-VIS) and Hall test. The results show that Ni O film has a single( 111) diffraction peak. The Ni O film exhibits better crystal performance when the oxygen partial pressure is 60%. With the oxygen partial pressure increasing,the surface of Ni O film gradually becomes smoother. The band gap of Ni O films obtained by( αhν)2-hν curve is 3. 60 ～ 3. 77 eV. All Ni O films have good p-type conductivity characteristics,and the hole carrier concentration is 5. 45 × 10~(17)～2. 16 × 10~(19) cm~(-3).
NiO thin films were prepared on sapphire substrates by using a JGP-300 ultra-high vacuum magnetron sputtering coating apparatus. The effect of oxygen partial pressure on the crystal structure,surface topography,optical properties and electrical properties of Ni O films were studied by using X-ray diffractometer( XRD),atomic force microscope( AFM),ultraviolet spectrophotometer( UV-VIS) and Hall test. The results show that Ni O film has a single( 111) diffraction peak. The Ni O film exhibits better crystal performance when the oxygen partial pressure is 60%. With the oxygen partial pressure increasing,the surface of Ni O film gradually becomes smoother. The band gap of Ni O films obtained by( αhν)2-hν curve is 3. 60 ～ 3. 77 eV. All Ni O films have good p-type conductivity characteristics,and the hole carrier concentration is 5. 45 × 10~(17)～2. 16 × 10~(19) cm~(-3).
引文
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[2]XIA L,WANG S Q,LI G X,et al.Flexible Sn O2/N-doped carbon nanofiber films as integrated electrodes for lithium-ion batteries with superior rate capacity and long cycle life[J].Small,2016,12(7):853-859.
[3]VADIM P S,OKTAY Y,FRANKO K,et al.Effect of p-NiO interlayer on internal quantum efficiency of p-GaN/n-ZnOlight-emitting devices[J].Journal of nanoelectronics and optoelectronics,2015,9(6):811-818.
[4]ZHANG J Y,ZHANG Q F,DENG T S,et al.Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnOnanonail array/n-Si heterojunction[J].Applied physics letters,2009,95(21):211107.
[5]NAKAI H,SUGIYAMA M,CHICHIBU S F.Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparentsemiconducting Ni O film deposited on an n-type Ga N homoepitaxial layer[J].Applied surface science,2017,110(18):1102.
[6]DAS S N,CHOI J H,KAR J P,et al.Fabrication of p-type Zn O nanowires based heterojunction diode[J].Materials chemistry and physics,2010,121(3):472-476.
[7]PARK J H,SEO J W,PARK S M,et al.Efficient CH3NH3Pb I3perovskite solar cells employing nanostructured p-type Ni Oelectrode formed by a pulsed laser deposition[J].Advanced materials,2015,27(27):4013-4019.
[8]WANG H,ZHAO Y,WU C,et al.Electrically pumped ultraviolet random lasing action from p-NiO/n-GaN heterojunction[J].International journal for light and electron optics,2015,126:2260-2263.
[9]WANG H,ZHAO Y,LI X Z,et al.Dominant near infrared light-emitting diodes based on p-NiO/n-InN heterostructure on Si C substrate[J].Journal of alloys and compounds,2018,735:1402-1405.
[10]SHI Z F,LI Y,ZHANG Y T,et al.High-effciency and air-stable perovskite quantum dots light-emitting diodes with an allinorganic heterostructure[J].Nano letters,2017,17(1):313-321.
[11]QIU J H,CHEN Z,ZHAO T X,et al.Electrochromic properties of Ni Ox films deposited by DC magnetron sputtering[J].Journal of nanoscience and nanotechnology,2018,18(6):4222-4229.
[12]ZHAO Y,WANG H,WU C,et al.Structures,electrical and optical properties of nickel oxide films by radio frequency magnetron sputtering[J].Vacuum,2014,103:14-16.
[13]赵洋,赵龙,王辉,等.基于MOCVD法制备的Ni O薄膜结构与光学特性[J].河南科技大学学报(自然科学版),2011,32(3):9-11.
[14]王玉新,臧谷丹,陈苗苗,等.不同衬底对Ni O薄膜结构和光透过性能的影响[J].辽宁师范大学学报(自然科学版),2017,40(4):462-466.
[15]DUTTA T,GUPTA P,GUPTA A,et al.Effect of Li doping in Ni O thin films on its transparent and conducting properties and its application in heteroepitaxial p-n junctions[J].Journal of applied physics,2010,108(8):083715.