一种新型SOI绝缘硅复合材料的制备与性能表征
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摘要
提出了一种新型SOI绝缘硅材料及其制备方法。通过高温工艺制备SiO_2-Ta_2O_5-B_2O_3-RO复合粉体,以其为中间层,将上下两层单晶硅片在700～800℃熔凝从而获得Si-insulator-Si 3层结构体。结果表明该样品层间结合紧密、分布均匀,具有良好的高压绝缘性能和介电性能。其绝缘层厚度、深度和性能参数可调,是一种新型的厚膜SOI绝缘硅复合材料。
A new kind preparation method of a novel SOI insulating silicon material has been developed in this paper.The SiO_2-Ta_2O_5-B_2O_3-RO composite powder was prepared through high temperature sintering,and the three-layer-structure of Si-Insulator-Si was obtained via welding two layers of mono-crystalline silicon at 700-800 ℃ with the SiO_2-Ta_2O_5-B_2O_3-RO as the intermediate layer.The test results showed that the sample layers bounded tightly and integrally,and the high voltage insulation and dielectric properties were excellent while the thickness,depth and performance parameters of the insulating layer were adjustable.It could be regarded as a novel thick film SOI insulating silicon composite.
A new kind preparation method of a novel SOI insulating silicon material has been developed in this paper.The SiO_2-Ta_2O_5-B_2O_3-RO composite powder was prepared through high temperature sintering,and the three-layer-structure of Si-Insulator-Si was obtained via welding two layers of mono-crystalline silicon at 700-800 ℃ with the SiO_2-Ta_2O_5-B_2O_3-RO as the intermediate layer.The test results showed that the sample layers bounded tightly and integrally,and the high voltage insulation and dielectric properties were excellent while the thickness,depth and performance parameters of the insulating layer were adjustable.It could be regarded as a novel thick film SOI insulating silicon composite.
引文
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[15]Maleville C,Aspar B,Poumeyrol T,et al.Proceedings of the fourth international symposium on silicon-on-insulator technology and devices[J].The Electrochemical Society,1996,96(3):34-36.
[16]Xu Yanchao,Yu Xiaojie,Yue Yunlong,et al.Dielectric properties of oxide glass and its research status[J].Journal of University of Jinan(Sci&Tech),2007,21(1):20-24(in Chinese).徐言超,于晓杰,岳云龙,等.氧化物玻璃介电性能及研究现状[J].济南大学学报(自然科学版),2007,21(1):20-24.
[2]Pelloie J L,Auberton-Herve A.A new generation of ICprocessing:low-power,high-performance SOI CMOS[J].Solid State Technol,2001,44(11):63-66.
[3]Fang Jian,Guo Yufeng,Lei Yu,et al.SOI high voltage device and SPIC technology[J].Microelectronics,2004,34(4):390-397(in Chinese).方健,郭宇峰,雷宇,等.SOI高压器件及高压集成技术[J].微电子学,2004,34(4):390-397.
[4]Sindhanaiselvi D,Shanmuganantham T,Sindhanaiselvi D,et al.Double boss sculptured diaphragm employed piezoresistive mems pressure sensor with Silicon-On-Insulator[J].Engin Sci Technol,2017,12(7):1740-1754.
[5]Xu Jingbo,Zhao Yulong,Jiang Zhuangde.Fabrication of monolithic silicon multi-sensor on SOI wafer[J].Chinese Journal of Semi-conductors,2007,28(2):302-307.
[6]Luoto H,Henttinen K,Suni T,et al.MEMS on cavitySOI wafers[J].Solid State Electronics,2007,51(2):328-332.
[7]Yu Jinzhong,Yan Qingfeng,Xia Jinsong,et al.SOI based integrated optoelectronics[J].Journal of Functional Materials and Devices,2003,9(1):1-7(in Chinese).余金中,严清峰,夏金松,等.SOI光电子集成[J].功能材料与器件学报,2003,9(1):1-7.
[8]Cheng K,Khakifirooza,Kulkarni P,et al.Extermely thin SOI(ETSOI)technology:past,present,and future[C].San Diego:Proceedings of the IEEE International SOIConference,2010:1-4.
[9]Nakaharai S,Tezuka T,Hirashita N,et al.Generation of crystal defectsin Ge-on-insulator(GOI)layers in the Gecondensation process[J].Semicond Sci Technol,2006,22(1):103-106.
[10]Orouji A A,Jam M E,Nejaty M.A novel SOI MES-FET by reducing the electric field crowding for high voltage applications[J].Superlattices and Microstructures,2014,72(4):11-24.
[11]Zhang Y W,Huang H X,Bi D W,et al.Novel Si ion implantation technique for improving the radiation hardness of SOI pseudo-MOS transistor[J].Nuclear Instruments and Methods in Physics Research Section B,2014,319(1):141-145.
[12]Xia C,Cheng X H,Wang Z J,et al.A novel partial-SOILDMSFET(>800V)with n-type floating buried layer in substrate[J].Microelectronics Reliability,2014,54(3):582-586.
[13]Auberton-Herve A J,Lamure J M,Barge T,et al.SOImaterials for ULSI applications[C].Semicond Int,1995(10):97-104.
[14]Bruel M.Silicon on insulator material technology[J].E-lectron Lett,1995,31(14):1201-1202.
[15]Maleville C,Aspar B,Poumeyrol T,et al.Proceedings of the fourth international symposium on silicon-on-insulator technology and devices[J].The Electrochemical Society,1996,96(3):34-36.
[16]Xu Yanchao,Yu Xiaojie,Yue Yunlong,et al.Dielectric properties of oxide glass and its research status[J].Journal of University of Jinan(Sci&Tech),2007,21(1):20-24(in Chinese).徐言超,于晓杰,岳云龙,等.氧化物玻璃介电性能及研究现状[J].济南大学学报(自然科学版),2007,21(1):20-24.