蓝宝石衬底上槽栅型X波段增强型AlGaN/GaN HEMT
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摘要
研制了一款X波段增强型AlGaN/GaN高电子迁移率晶体管(HEMT)。在3英寸(1英寸=2.54 cm)蓝宝石衬底上采用低损伤栅凹槽刻蚀技术制备了栅长为0.3μm的增强型AlGaN/GaN HEMT。所制备的增强型器件的阈值电压为0.42 V,最大跨导为401 mS/mm,导通电阻为2.7Ω·mm。器件的电流增益截止频率和最高振荡频率分别为36.1和65.2 GHz。在10 GHz下进行微波测试,增强型AlGaN/GaN HEMT的最大输出功率密度达到5.76 W/mm,最大功率附加效率为49.1%。在同一材料上制备的耗尽型器件最大输出功率密度和最大功率附加效率分别为6.16 W/mm和50.2%。增强型器件的射频特性可与在同一晶圆上制备的耗尽型器件相比拟。
An X-band enhancement-mode(E-mode) AlGaN/GaN high electron mobility transistor(HEMT) was developed. The E-mode AlGaN/GaN HEMT with 0.3 μm gate-length was fabricated on the 3 inch(1 inch=2.54 cm) sapphire substrate by using low damage gate recess etching technique. The E-mode device exhibits a maximum transconductance of 401 mS/mm,an on-resistance of 2.7 Ω·mm with a threshold voltage of 0.42 V, the current gain cut-off frequency of 36.1 GHz and the maximum oscillation frequency of the 65.2 GHz. At 10 GHz, the E-mode AlGaN/GaN HEMT shows a maximum output power density of 5.76 W/mm and a peak power-added efficiency of 49.1%.The maximum output power density and peak power added efficiency of the depletion-mode(D-mode) device fabricated on the same wafer are 6.16 W/mm and 50.2%, respectively. The RF characteristics of the E-mode device are comparable with those of the D-mode device that fabricated on the same wafer.
An X-band enhancement-mode(E-mode) AlGaN/GaN high electron mobility transistor(HEMT) was developed. The E-mode AlGaN/GaN HEMT with 0.3 μm gate-length was fabricated on the 3 inch(1 inch=2.54 cm) sapphire substrate by using low damage gate recess etching technique. The E-mode device exhibits a maximum transconductance of 401 mS/mm,an on-resistance of 2.7 Ω·mm with a threshold voltage of 0.42 V, the current gain cut-off frequency of 36.1 GHz and the maximum oscillation frequency of the 65.2 GHz. At 10 GHz, the E-mode AlGaN/GaN HEMT shows a maximum output power density of 5.76 W/mm and a peak power-added efficiency of 49.1%.The maximum output power density and peak power added efficiency of the depletion-mode(D-mode) device fabricated on the same wafer are 6.16 W/mm and 50.2%, respectively. The RF characteristics of the E-mode device are comparable with those of the D-mode device that fabricated on the same wafer.
引文
[1] MISHRA U K,SHEN L K,KAZIOR T E et al.GaN-based RF power devices and amplifiers [J].Proceedings of the IEEE,2008,96 (2):287-305.
[2] CAI Y,ZHOU Y G,CHEN K J,et al.High performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment [J].IEEE Electron Device Letters,2005,26(7):435-437.
[3] 李淑萍,张志利,付凯,等.标准氟离子注入实现增强型GaN基功率器件[J].半导体技术,2017,42(11):827-832,875.LI S P,ZHANG Z L,FU K,et al.Enhancement-mode GaN-based power devices fabricated by using standard fluorine ion implantation [J].Semiconductor Devices,2017,42(11):827-832,875 (in Chinese).
[4] ADACHI T,DEGUCHI T,NAKAGAWA A,et al.High-performance E-mode AlGaN/GaN HEMTs with LT-GaN cap layer using gate recess techniques[C]// Procee-dings of Device Research Conference.Santa Barbara,CA,USA,2008:129-130.
[5] WANG Z L,ZHOU J J,KONG Y C,et al.Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator [J].Journal of Semiconductors,2015,36(9):62-65.
[6] UEMOTO Y,HIKITA M,UENO H,et al.Gate injection transistor (GIT)—a normally-off AlGaN/GaN power transistor using conductivity modulation [J].IEEE Tran-sactions on Electron Devices,2007,54(12):3393-3399.
[7] LIU J,ZHOU Y G,ZHU J,et al.DC and RF characteristics of AlGaN/GaN/InGaN/GaN double heterojunction HEMTs [J].IEEE Transactions on Electron Devices 2007,54(1):2-10
[8] OHKI T,KIKKAWA T,KANAMURA M,et al.An over 100 W AlGaN/GaN enhancement-mode HEMT power amplifier with piezoelectric-induced cap structure [J].Phy-sica Status Solidi:C,2009,6(6):1365-1368
[9] KANAMURA M,OHKI T,KIKKAWA T,et al.High current operation of enhancement-mode GaN MIS-HEMTs with triple cap structure using atomic layer deposited Al2O3 gate insulator [C]//Proceedings of Device Research Conference.University Park,PA,USA,2009:165-166.
[10] FENG Z H,ZHOU R,XIE S Y,et al.18-GHz 3.65-W/mm enhancement-mode AlGaN/GaN HFET using fluorine plasma ion implantation [J].IEEE Electron Device Letters,2010,31(12):1386-1388.
[11] 张蓉,马晓华,罗卫军,等.高性能X波段增强型凹栅Al2O3/AlGaN/GaN MIS-HEMT [J].微电子学与计算机,2017,34(11):100-104.ZHANG R,MA X J,LUO W J,et al.high performance enhancement-mode gate-recessed Al2O3/AlGaN/GaN MIS-HEMTs for X-band applications [J].Microelectronics & Computer,2017,34(11):100-104 (in Chinese).
[2] CAI Y,ZHOU Y G,CHEN K J,et al.High performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment [J].IEEE Electron Device Letters,2005,26(7):435-437.
[3] 李淑萍,张志利,付凯,等.标准氟离子注入实现增强型GaN基功率器件[J].半导体技术,2017,42(11):827-832,875.LI S P,ZHANG Z L,FU K,et al.Enhancement-mode GaN-based power devices fabricated by using standard fluorine ion implantation [J].Semiconductor Devices,2017,42(11):827-832,875 (in Chinese).
[4] ADACHI T,DEGUCHI T,NAKAGAWA A,et al.High-performance E-mode AlGaN/GaN HEMTs with LT-GaN cap layer using gate recess techniques[C]// Procee-dings of Device Research Conference.Santa Barbara,CA,USA,2008:129-130.
[5] WANG Z L,ZHOU J J,KONG Y C,et al.Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator [J].Journal of Semiconductors,2015,36(9):62-65.
[6] UEMOTO Y,HIKITA M,UENO H,et al.Gate injection transistor (GIT)—a normally-off AlGaN/GaN power transistor using conductivity modulation [J].IEEE Tran-sactions on Electron Devices,2007,54(12):3393-3399.
[7] LIU J,ZHOU Y G,ZHU J,et al.DC and RF characteristics of AlGaN/GaN/InGaN/GaN double heterojunction HEMTs [J].IEEE Transactions on Electron Devices 2007,54(1):2-10
[8] OHKI T,KIKKAWA T,KANAMURA M,et al.An over 100 W AlGaN/GaN enhancement-mode HEMT power amplifier with piezoelectric-induced cap structure [J].Phy-sica Status Solidi:C,2009,6(6):1365-1368
[9] KANAMURA M,OHKI T,KIKKAWA T,et al.High current operation of enhancement-mode GaN MIS-HEMTs with triple cap structure using atomic layer deposited Al2O3 gate insulator [C]//Proceedings of Device Research Conference.University Park,PA,USA,2009:165-166.
[10] FENG Z H,ZHOU R,XIE S Y,et al.18-GHz 3.65-W/mm enhancement-mode AlGaN/GaN HFET using fluorine plasma ion implantation [J].IEEE Electron Device Letters,2010,31(12):1386-1388.
[11] 张蓉,马晓华,罗卫军,等.高性能X波段增强型凹栅Al2O3/AlGaN/GaN MIS-HEMT [J].微电子学与计算机,2017,34(11):100-104.ZHANG R,MA X J,LUO W J,et al.high performance enhancement-mode gate-recessed Al2O3/AlGaN/GaN MIS-HEMTs for X-band applications [J].Microelectronics & Computer,2017,34(11):100-104 (in Chinese).