金属铬对金刚石单晶生长习性影响研究
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摘要
在高温高压条件下,以Co-Cr为触媒,使用温度梯度法作为金刚石生长驱动力,进行金刚石单晶生长的实验研究。实验室结果表明:随着触媒中金属铬添加量的增加,晶体生长速度明显变慢,当金属触媒中铬的添加量达到3wt.%的时候,生长的晶体内开始产生气泡和包裹物;当金属铬的掺杂量达到6.0wt.%的时候,能明显观察到晶体泛黄绿色;红外测试结果表明,晶体内部的氮浓度呈现出明显的增加趋势,最高浓度达483×10~(-6)。
This paper studied the growth of single crystal diamond by applying Co-Cr as catalytic medium and temperature gradient as a driving force on the condition of high pressure and high temperature.Experiment result indicated that the growth rate of diamond crystal decreased as the content of Cr added in Co-solvent increased.When the addition of Cr exceeded 3wt.% of medium metal,inclusions and micro-defects were readily formed in diamond crystals.With the addition of Cr being 6wt.%,the collected diamond obviously turned yellowish green.FTIR indicated that the nitrogen concentration in diamond structure progressively increased up to 483×10-6.
This paper studied the growth of single crystal diamond by applying Co-Cr as catalytic medium and temperature gradient as a driving force on the condition of high pressure and high temperature.Experiment result indicated that the growth rate of diamond crystal decreased as the content of Cr added in Co-solvent increased.When the addition of Cr exceeded 3wt.% of medium metal,inclusions and micro-defects were readily formed in diamond crystals.With the addition of Cr being 6wt.%,the collected diamond obviously turned yellowish green.FTIR indicated that the nitrogen concentration in diamond structure progressively increased up to 483×10-6.
引文
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[2]臧传义,贾晓鹏,任国仲,等.快速生长优质宝石级金刚石大单晶[J].金刚石与磨料磨具工程,2003(6):12-15.
[3]H.Sumiya,N.Toda,S.Satoh.Growth rate of high-quality large diamond crystals[J].Journal of Crystal Growth,2002,237-239,1281-1285.
[4] Meng Y F,Yan C S,Lai J,et al.Enhanced optical properties of chemical vapor deposited single crystal diamond by low-pressure/high-temperature annealing[J].Appl.Phys.Sci.2008,105,17620-17625.
[5]Alexandre Tallaire,Jocelyn Achard,Francois Silva,Ovidiu Brinza,Alix Gicquel.Growth of large size diamond single crystals by plasma assisted chemical vapour deposition:Recent achievements and remaining challenges[J].C.R.Physique,2013,14,169-184.
[6] Bert Willems,Alexandre Tallaire,Jocelyn Achard.Optical study of defects in thick undoped CVD synthetic diamond layers,Diamond&Related Materials[J].2014,41,25-33.
[7] Y.N.Palyanov,I.N.Kupriyanov,Y.M.Borzdov and Y.V.Bataleva.High-pressure synthesis and characterization of diamond from an Mg–Si–C system[J].CrystEngComm,2015,17,7323-7331.
[8] Yuri N.Palyanov,Yuri M.Borzdov,Igor N.Kupriyanov,et al.Sokol.Diamond Crystallization from an Antimony Carbon System under High Pressure and Temperature[J].Cryst.Growth Des.2015,15,2539-2544.
[9] HUANG Guo Feng,JIA Xiao Peng,LI Shang Sheng,et al.Effects of additive NaN3on the HPHT synthesis of large single crystal diamond grown by TGM[J].SCIENCE CHINA Physics,Mechanics&Astronomy,53,10:1831-1835.
[10]Guo-Feng Huang,You-Jin Zheng,Zhan-Chang Li,et al.Effects of Mg on diamond growth and properties in Fe-C system under high pressure and high temperature condition[J].Chin.Phys.B.2016,25,8:088104.