摘要
采用PVT法得到高纯4H-SiC体单晶。研究了0°、1°、4°晶体对晶体台阶流、晶体结晶质量、晶体缺陷、晶体电学性能的影响;晶体台阶流采用奥林巴斯显微镜进行表征,晶体缺陷采用莱卡体系显微镜进行表征,晶体结晶质量采用高分辨XRD进行表征,晶体电学性能采用非接触电阻率测试仪进行表征。实验结果表明:4°籽晶生长的晶体缺陷最少,1°与4°籽晶生长的晶体结晶质量相当,0°籽晶生长的晶体电学性能最均匀。
High purity 4 H-SiC single crystals grown by physical vapor transport were investigated. This paper studied the effects of 0°seed,1°seed and 4°seed on crystal defect,crystal quality,electrical properties.The step flow characterized by Olympus microscope,crystal defect characterized by Leica microscope,crystal quality characterized by high resolution XRD,electrical properties characterized by non-contact electrical resistivity meter. Experiments indicated that 4 H-SiC single crystals grown by 4°seed had minimal defects. 4 H-SiC single crystals grown by 1° seed and 4° seed had similar crystallization quality. 4 H-SiC single crystals grown by 0°seed had the most uniform resistivity.
引文
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