InP高压直拉单晶炉的热场优化设计与分析
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摘要
高压直拉单晶炉的热场对磷化铟(InP)晶体生长过程有重要影响,存在缺陷的热场很难生长出合格的InP单晶,因此对InP晶体生长的热场进行优化设计与分析非常必要。提出了采用新型的碳/碳(C/C)复合材料加热器、复合固化硬毡为保温筒的热场结构,并通过仿真设计优化了InP单晶热场,解决了原有的以石墨加热器和碳纤维软毡为基础的InP单晶热场稳定性和对称性差以及使用寿命短的问题。经过实验测试,加热效率提高了25%,使用寿命达到90炉以上。
The thermal field of high-pressure single crystal furnace has great influence on the growth process of indium phosphide(InP) crystal. It is difficult to grow high quality single crystal in defective thermal field, so it is necessary to optimally design and analyze the thermal field for InP crystal growth. In this paper, the new type of carbon/carbon(C/C) composite heater and composite curing hard felt are used as the thermal field structure of the insulation tube. The thermal field for InP crystal growth is designed and optimized through numerical simulation, which solves the problem that the stability and symmetry of the thermal field for InP single crystal growth based on graphite heater and carbon fiber soft felt are poor and the service life is short. Through actual experiment test, the heating efficiency is improved by 25% and the service life is extended to above 90 times.
The thermal field of high-pressure single crystal furnace has great influence on the growth process of indium phosphide(InP) crystal. It is difficult to grow high quality single crystal in defective thermal field, so it is necessary to optimally design and analyze the thermal field for InP crystal growth. In this paper, the new type of carbon/carbon(C/C) composite heater and composite curing hard felt are used as the thermal field structure of the insulation tube. The thermal field for InP crystal growth is designed and optimized through numerical simulation, which solves the problem that the stability and symmetry of the thermal field for InP single crystal growth based on graphite heater and carbon fiber soft felt are poor and the service life is short. Through actual experiment test, the heating efficiency is improved by 25% and the service life is extended to above 90 times.
引文
[1] HOSSAIN M, NOSAEVA K, JANKE B, et al. A G-band high power frequency doubler in transferred-substrate InP HBT technology[J]. IEEE Microwave & Wireless Components Letters, 2016, 26 (1): 49- 51.
[2] REED TB, RODWELL M, GRIFFITH Z. A 220 GHz InP HBT solid state power amplifier MMIC with 90 mW Pout at 8.2 dB compressed gain[C]. IEEE Compound Semiconductor Integrated Circuit Symposium, 2012: 1- 4.
[3] 孙聂枫, 周晓龙, 陈秉克,等. InP单晶材料现状与展望[J]. 电子工业专用设备, 2005, 34(10): 10-14.SUN N F, ZHOU X L, CHEN B K, et al. Current situation and prospect of InP single crystal materials[J]. Special Equipment for Electronic Industry, 2005, 34(10): 10-14.
[4] NEUBERT M, KWASNIEWSKI A, FORNARI R. Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods[J]. Journal of Crystal Growth, 2008, 310(24): 5270- 5277.
[5] 孙聂枫, 陈旭东, 赵有文,等. 磷化铟晶体材料的应用进展研究[J]. 半导体情报, 1998, 35(4):1- 6.SUN N F, CHEN X D, ZHAO Y W, et al. Application research progress of indium phosphide crystal materials[J]. Semiconductor Intelligence, 1998, 35 (4): 1- 6.
[6] 方敦辅, 王祥熙, 徐涌泉,等. 掺硫低位错磷化铟单晶生长和性质[J]. 应用科学学报, 1983, 1 (3): 51- 58.FANG D P, WANG X X, XU Y Q, et al. The growth and characteristics of S-doped low dislocation InP single crystals[J]. Journal of Applied Sciences, 1983,1 (3): 51- 5- 58.
[7] 吴灵犀, 刘巽琅, 叶式中,等. 高压液封直拉InP单晶的低温光致发光研究[J]. 半导体学报, 1984, 5(2): 132-138.WU L X, LIU X L, YE SH ZH, et.al. Low temperature photoluminescence study on LEC-InP single crystals [J]. Chinese Journal of Semiconductors, 1984, 5(2): 132-138.
[8] SUN T N, SZULIN L, SHUTSENG K. The preparation of semi insulating and low dislocation density InP single crystals[C]. Proceedings of the Second International Conference on Semi-Indulating Ⅲ-ⅤMaterials, 1982: 61- 67.
[9] 张新雨,刘丁,杨文,等. 基于人工鱼群霍夫变换的单晶硅直径检测[J].仪器仪表学报,2014,35 (4): 940-947.ZHANG X Y, LIU D, YANG W, et.al. Diameter detection of single crystal silicon base on artificial fish swarm algorithm-Hough transform[J]. Chinese Journal of Scientific Instrument, 2014, 35 (4): 940-947.
[10] 石守娟, 吴国新. 面向精密分析仪器的加热炉体温度场分布特征研究[J]. 电子测量与仪器学报, 2017, 31(3): 461- 467.SHI SH J, WU G X. Study on distribution characteristics of temperature field of furnace body for precision analysis equipment furnace body for precision analysis equipment[J]. Journal of Electronic Measurement and Instrumentation, 2017, 31(3): 461- 467.
[11] 周晓龙, 杨克武, 杨瑞霞, 等. 大直径InP单晶生长研究[J]. 半导体技术, 2009, 34 (4): 311-314.ZHOU X L, YANG K W, YANG R X, et al. Large diameter InP single crystal growth research[J]. Semiconductor Technology, 2009, 34 (4): 311-314.
[12] 孙聂枫. INP晶体合成、生长和特性[D]. 天津: 天津大学, 2008.SUN N F. INP crystal synthesis, growth and properties[D]. Tianjin: Tianjin University, 2008.
[13] 李翠云,李辅安. 碳/碳复合材料的应用研究进展[J]. 化工新型材料, 2006, 34(8): 18- 20.LI C Y, LI F AN. application progress of carbon/carbon composites[J]. New Chemical Materials, 2006, 34 (8): 18- 20.
[14] GONIK M A, LOMOKHOVA A V, GONIK M M, et al. Development of a model for on-line control of crystal growth by the AHP method[J]. Journal of Crystal Growth, 2007, 303(1): 180-186.
[15] SMIRNOV A D, KALAEV V V. Development of oxygen transport model in Czochralski growth of silicon crystals[J]. Journal of Crystal Growth, 2008, 310(12): 2970- 2976.
[16] SMIRNOV A D, KALAEV V V, Analysis of impurity transport and deposition processes on the furnace elements during Cz silicon growth[J]. Journal of Crystal Growth, 2009, 311(3): 829- 832.
[17] 李光平, 王寿寅. PL Mapping在SI-GaAs材料与器件性能关系研究中的应用[J]. 现代仪器与医疗, 1999, 5(4): 38- 41.LI G P, WANG SH Y. Study on the application of PL mapping to the relationship between SI-GaAs crystal and device property[J]. Modern Instruments and Medicine, 1999, 5 (4): 38- 41.
[18] WANG SH J, SUN N F, GAO L J, et al. Investigation of morphology evolution of the In-rich inclusions and the corresponding defects in InP single crystals[J]. Crystal Research & Technology, 2015, 50(8) : 668- 675.
[19] SMITH N A, HARRIS I R, COCKAYNE B, et al. The identification of precipitate phases in Fe-doped InP single crystals [J]. Journal of Crystal Growth,1984, 68(2): 517- 522.
[20] FRANZOSI P, SALVIATI G, COCITO M, et al. Inclusion-like defects in Czochralski grown InP single crystals[J]. Journal of Crystal Growth,1984, 69(2- 3): 388- 398.
[21] KOHIRO K, HIRANO R, ODA O, et al. Study on microscopic defects in Fe-Doped InP single crystals[J]. Journal of Electronic Materials,1996, 25(3): 343- 346.
[22] WANG SH J, SUN N F, GAO L J, et al. Morphology of second-phase particles and pores in InP substrates and their elimination by a rapid in situ P injection before crystal growth [J]. Physica Status Solidi (b), 2016, 253(4): 654- 658.
[2] REED TB, RODWELL M, GRIFFITH Z. A 220 GHz InP HBT solid state power amplifier MMIC with 90 mW Pout at 8.2 dB compressed gain[C]. IEEE Compound Semiconductor Integrated Circuit Symposium, 2012: 1- 4.
[3] 孙聂枫, 周晓龙, 陈秉克,等. InP单晶材料现状与展望[J]. 电子工业专用设备, 2005, 34(10): 10-14.SUN N F, ZHOU X L, CHEN B K, et al. Current situation and prospect of InP single crystal materials[J]. Special Equipment for Electronic Industry, 2005, 34(10): 10-14.
[4] NEUBERT M, KWASNIEWSKI A, FORNARI R. Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods[J]. Journal of Crystal Growth, 2008, 310(24): 5270- 5277.
[5] 孙聂枫, 陈旭东, 赵有文,等. 磷化铟晶体材料的应用进展研究[J]. 半导体情报, 1998, 35(4):1- 6.SUN N F, CHEN X D, ZHAO Y W, et al. Application research progress of indium phosphide crystal materials[J]. Semiconductor Intelligence, 1998, 35 (4): 1- 6.
[6] 方敦辅, 王祥熙, 徐涌泉,等. 掺硫低位错磷化铟单晶生长和性质[J]. 应用科学学报, 1983, 1 (3): 51- 58.FANG D P, WANG X X, XU Y Q, et al. The growth and characteristics of S-doped low dislocation InP single crystals[J]. Journal of Applied Sciences, 1983,1 (3): 51- 5- 58.
[7] 吴灵犀, 刘巽琅, 叶式中,等. 高压液封直拉InP单晶的低温光致发光研究[J]. 半导体学报, 1984, 5(2): 132-138.WU L X, LIU X L, YE SH ZH, et.al. Low temperature photoluminescence study on LEC-InP single crystals [J]. Chinese Journal of Semiconductors, 1984, 5(2): 132-138.
[8] SUN T N, SZULIN L, SHUTSENG K. The preparation of semi insulating and low dislocation density InP single crystals[C]. Proceedings of the Second International Conference on Semi-Indulating Ⅲ-ⅤMaterials, 1982: 61- 67.
[9] 张新雨,刘丁,杨文,等. 基于人工鱼群霍夫变换的单晶硅直径检测[J].仪器仪表学报,2014,35 (4): 940-947.ZHANG X Y, LIU D, YANG W, et.al. Diameter detection of single crystal silicon base on artificial fish swarm algorithm-Hough transform[J]. Chinese Journal of Scientific Instrument, 2014, 35 (4): 940-947.
[10] 石守娟, 吴国新. 面向精密分析仪器的加热炉体温度场分布特征研究[J]. 电子测量与仪器学报, 2017, 31(3): 461- 467.SHI SH J, WU G X. Study on distribution characteristics of temperature field of furnace body for precision analysis equipment furnace body for precision analysis equipment[J]. Journal of Electronic Measurement and Instrumentation, 2017, 31(3): 461- 467.
[11] 周晓龙, 杨克武, 杨瑞霞, 等. 大直径InP单晶生长研究[J]. 半导体技术, 2009, 34 (4): 311-314.ZHOU X L, YANG K W, YANG R X, et al. Large diameter InP single crystal growth research[J]. Semiconductor Technology, 2009, 34 (4): 311-314.
[12] 孙聂枫. INP晶体合成、生长和特性[D]. 天津: 天津大学, 2008.SUN N F. INP crystal synthesis, growth and properties[D]. Tianjin: Tianjin University, 2008.
[13] 李翠云,李辅安. 碳/碳复合材料的应用研究进展[J]. 化工新型材料, 2006, 34(8): 18- 20.LI C Y, LI F AN. application progress of carbon/carbon composites[J]. New Chemical Materials, 2006, 34 (8): 18- 20.
[14] GONIK M A, LOMOKHOVA A V, GONIK M M, et al. Development of a model for on-line control of crystal growth by the AHP method[J]. Journal of Crystal Growth, 2007, 303(1): 180-186.
[15] SMIRNOV A D, KALAEV V V. Development of oxygen transport model in Czochralski growth of silicon crystals[J]. Journal of Crystal Growth, 2008, 310(12): 2970- 2976.
[16] SMIRNOV A D, KALAEV V V, Analysis of impurity transport and deposition processes on the furnace elements during Cz silicon growth[J]. Journal of Crystal Growth, 2009, 311(3): 829- 832.
[17] 李光平, 王寿寅. PL Mapping在SI-GaAs材料与器件性能关系研究中的应用[J]. 现代仪器与医疗, 1999, 5(4): 38- 41.LI G P, WANG SH Y. Study on the application of PL mapping to the relationship between SI-GaAs crystal and device property[J]. Modern Instruments and Medicine, 1999, 5 (4): 38- 41.
[18] WANG SH J, SUN N F, GAO L J, et al. Investigation of morphology evolution of the In-rich inclusions and the corresponding defects in InP single crystals[J]. Crystal Research & Technology, 2015, 50(8) : 668- 675.
[19] SMITH N A, HARRIS I R, COCKAYNE B, et al. The identification of precipitate phases in Fe-doped InP single crystals [J]. Journal of Crystal Growth,1984, 68(2): 517- 522.
[20] FRANZOSI P, SALVIATI G, COCITO M, et al. Inclusion-like defects in Czochralski grown InP single crystals[J]. Journal of Crystal Growth,1984, 69(2- 3): 388- 398.
[21] KOHIRO K, HIRANO R, ODA O, et al. Study on microscopic defects in Fe-Doped InP single crystals[J]. Journal of Electronic Materials,1996, 25(3): 343- 346.
[22] WANG SH J, SUN N F, GAO L J, et al. Morphology of second-phase particles and pores in InP substrates and their elimination by a rapid in situ P injection before crystal growth [J]. Physica Status Solidi (b), 2016, 253(4): 654- 658.