基于ANSYS Workbench的铜质研磨盘热结构耦合分析
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摘要
在研磨氧化镓晶片时,由于铜质研磨盘的导热系数和热膨胀率较大,因此研磨盘各个部位的热变形量也会因为温度的不同而不同。通常在加工前需要对研磨盘加工时的变形量进行预测,并对研磨盘表面进行平面补偿。选取了3组不同补偿角的研磨盘,基于ANSYS Workbench对它们分别进行瞬态热结构耦合分析。结果表明:当补偿角为0.003°时铜盘补偿效果最好。该方法为不同研磨工况下研磨盘补偿角的选定提供了参考。
While grinding agallium oxide wafer,since the thermal conductivity and thermal expansion rate of the copper abrasive disc are large,the amount of thermal deformation in each place of the grinding disc changes depending on the temperature.It is usually necessary to predict the amount of deformation during the processing of the grinding disc before machining and to compensate the surface of the grinding disc.In this paper,three sets of grinding discs with different compensation angles when grinding Ga2 O3 wafers were selected.The transient thermal-structure coupling analysis was carried out based on ANSYS Workbench.The results show that the copper disk compensation effect is best when the compensation angle is 0.003°.This method provides a reference for the selection of the compensation angle of the grinding disc under different grinding conditions.
While grinding agallium oxide wafer,since the thermal conductivity and thermal expansion rate of the copper abrasive disc are large,the amount of thermal deformation in each place of the grinding disc changes depending on the temperature.It is usually necessary to predict the amount of deformation during the processing of the grinding disc before machining and to compensate the surface of the grinding disc.In this paper,three sets of grinding discs with different compensation angles when grinding Ga2 O3 wafers were selected.The transient thermal-structure coupling analysis was carried out based on ANSYS Workbench.The results show that the copper disk compensation effect is best when the compensation angle is 0.003°.This method provides a reference for the selection of the compensation angle of the grinding disc under different grinding conditions.
引文
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[2]Nikolaev V I,Maslov V,Stepanov S I,et al.Growth and characterization ofβ-Ga2O3,crystals[J].Journal of Crystal Growth,2016,457:132-136.
[3]Zbigniew Galazka,Klaus Irmscher,Reinhard Uecker,et al.On the bulkβ-Ga2O3single crystals grown by the Czochralski method[J].Journal of Crystal Growth,2014,404:184-191.
[4]刘一泽.反应堆一回路闸阀的中法兰密封性能研究[D].沈阳:东北大学,2015:39-40.
[5]何坤,杜长颉.导流洞进口段温控设计及应力特征分析[J].东北水利水电,2018,36(7):5-10,71.
[6]李尧.双辊薄带振动铸轧过程仿真模拟及实验研究[D].秦皇岛:燕山大学,2011:12-13.
[7]黎清健,王成勇,李胜蓝,等.脆硬材料研磨加工瞬态温度场有限元分析[J].金刚石与磨料磨具工程,2014,34(5):22-28.