压阻式压力传感器灵敏度的仿真方法
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摘要
为了实现对压阻式压力传感器灵敏度的准确预估,针对传统中心点算法的不足,采用了一种基于对敏感薄膜应力分布的有限元仿真分析和路径积分的仿真方法。通过对电阻所在路径线积分计算电阻平均变化率,计算出不同压力下的输出电压。对2种不同的模型四边固支的方形膜模型和底面固支的C型模型,进行仿真分析并将仿真结果和实际值对比。实验结果表明底面固支的C型模型比四面固支的方形模型更接近实际情况。传感器样品的实际灵敏度为0.102 5 mV/kPa,与底面固支的C型模型仿真结果相对误差小于2%。
Sensitivity is one of the important performance indicators of the sensor.In order to accurately predict the sensitivity of the piezoresistive pressure sensor and overcome the insufficiency of the traditional center point calculation method,a simulation method based on the path integration and finite elementanalysis of the stress on the sensitive film was adopted.The output voltage under different pressure was obtained by calculating average change rate of the resistance using the line integration algorithm to the path of the resistor.As for the four-sided fixed square membrane model and the bottom-clamped C-type model,simulation was conducted and the results were compared with the actual value.The experiments show that the result of bottom-clamped C-type model is more accurate than that of four-sided fixed square membrane model,and the actual sensitivity of the sensor sample was 0.102 5 mV/kPa,which possess a relative error of less than 2%.
Sensitivity is one of the important performance indicators of the sensor.In order to accurately predict the sensitivity of the piezoresistive pressure sensor and overcome the insufficiency of the traditional center point calculation method,a simulation method based on the path integration and finite elementanalysis of the stress on the sensitive film was adopted.The output voltage under different pressure was obtained by calculating average change rate of the resistance using the line integration algorithm to the path of the resistor.As for the four-sided fixed square membrane model and the bottom-clamped C-type model,simulation was conducted and the results were compared with the actual value.The experiments show that the result of bottom-clamped C-type model is more accurate than that of four-sided fixed square membrane model,and the actual sensitivity of the sensor sample was 0.102 5 mV/kPa,which possess a relative error of less than 2%.
引文
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[5] 姚宗,梁庭,张迪雅,等.基于SOI的MEMS压阻式高温压力敏感芯片的研制[J].仪表技术与传感器,2017(1):15-18.
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[8] 张瑞,梁庭,熊继军,等.一种大量程SOI压阻式压力传感器[J].传感技术学报,2015(8):1125-1130.
[9] 杨峻松,谭晓兰,刘珍妮,等.硅压阻式传感器的优化分析[J].北方工业大学学报,2011,23(3):29-36.
[2] 付兴铭.汽车用扩散硅压力传感器的设计与封装研究[D].武汉:华中科技大学,2007.
[3] 陈德勇.微机械谐振梁压力传感器研究[D].北京:中国科学院电子学研究所,2002.
[4] 任卫,马炳和,吕海峰.面向动态压力测量的微型压力传感器敏感结构[J].微纳电子技术,2009,46(6):362-365.
[5] 姚宗,梁庭,张迪雅,等.基于SOI的MEMS压阻式高温压力敏感芯片的研制[J].仪表技术与传感器,2017(1):15-18.
[6] 彭杰纲.传感器原理及应用[M].北京:机械工业出版社,2012.
[7] 李旺旺,梁庭,张迪雅,等.SOI压阻式压力传感器敏感结构的优化设计[J].仪表技术与传感器,2016(6):15-18.
[8] 张瑞,梁庭,熊继军,等.一种大量程SOI压阻式压力传感器[J].传感技术学报,2015(8):1125-1130.
[9] 杨峻松,谭晓兰,刘珍妮,等.硅压阻式传感器的优化分析[J].北方工业大学学报,2011,23(3):29-36.