基于石墨烯材料的太赫兹波探测器研究进展
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摘要
太赫兹波具有瞬态性、宽带性、穿透性和低能性等一系列独特性质,使其在材料研究、信息传递、环境检测、国防安全、医疗服务等方面展现了非常广阔的应用前景。作为该领域应用的关键,太赫兹探测器得到科研人员极大的重视。一般来讲,探测器的性能很大程度上依赖于基质材料的特性。石墨烯具有2个非常重要的优势,一是石墨烯具有线性能带结构,使得能够吸收太赫兹波;二是石墨烯具有超高载流子迁移率,能够进行超快探测。因此,石墨烯基有望成为太赫兹频段新一代高性能探测器的基质材料。详细综述了近几年关于石墨烯基太赫兹探测器的发展状况。
Terahertz wave has unique advantages,such as being transient,broadband,penetration and low energy,which shows a very broad application prospect in the research of materials science,information communication,environmental monitoring,national defense,medical services etc.As the key of the application in this field,terahertz detector has attracted much attention.Graphene has two advantages for detector.Firstly,the linear band structure makes it possible to absorb terahertz photon and convert to current or voltage.Secondly,it has ultra high carrier mobility so that it could realize ultrafast detection.Therefore,graphene is expected to be the suitable material for new generation of high performance detectors in the terahertz band.The development of terahertz detectors based on graphene in recent years is summarized in detail.
Terahertz wave has unique advantages,such as being transient,broadband,penetration and low energy,which shows a very broad application prospect in the research of materials science,information communication,environmental monitoring,national defense,medical services etc.As the key of the application in this field,terahertz detector has attracted much attention.Graphene has two advantages for detector.Firstly,the linear band structure makes it possible to absorb terahertz photon and convert to current or voltage.Secondly,it has ultra high carrier mobility so that it could realize ultrafast detection.Therefore,graphene is expected to be the suitable material for new generation of high performance detectors in the terahertz band.The development of terahertz detectors based on graphene in recent years is summarized in detail.
引文
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[20]谢佳林.基于钽酸锂晶体的热释电太赫兹探测系统的设计[D].成都:电子科技大学,2015.(XIE Jialin.A design of a system for pyroelectric terahertz detectors based on lithium tantalite[D].Chengdu,China:University of Electronic Science and Technology of China,2015.)
[21]GOLAY M J E.The theoretical and practical sensitivity of the pneumatic infrared detector[J].Review of Scientific Instruments,1949,20(11):816-820.
[22]SCHELLER M,YARBOROUGH J M,MOLONEY J V,et al.Room temperature continuous wave milliwatt terahertz source[J].Optics Express,2010,18(26):27112-27117.
[23]DYAKONOV M,SHUR M.Shallow water analogy for a ballistic field effect transistor:new mechanism of plasma wave generation by dc current[J].Physical Review Letters,1993,71(15):2465-2468.
[24]杜艳丽,刘晓雯,段智勇,等.太赫兹波探测器的研究进展[J].半导体光电,2009,30(4):481-485.(DU Yanli,LIU Xiaowen,DUAN Zhiyong,et al.Research progresses on terahertz detectors[J].Semiconductor Optoelectronics,2009,30(4):481-485.)
[25]NOVOSELOV K S,GEIM A K,MOROZOV S V,et al.Electric field effect in atomically thin carbon films[J].Science,2004,306(5696):666-669.
[26]BALANDIN A A,GHOSH S,BAO W,et al.Superior thermal conductivity of single-layer graphene[J].Nano Letters,2008,8(3):902-907.
[27]杨正龙,刘芯岩,卜弋龙,等.石墨烯场效应晶体管研究进展[J].固体电子学研究与进展,2014(4):345-349.(YANG Zhenglong,LIU Xinyan,BU Yilong,et al.Reserach progress of graphene based field effect transistor[J].Research&Progress of SSE,2014(4):345-349.)
[28]RYZHII V,RYZHII M.Graphene bilayer field-effect phototransistor for terahertz and infrared detection[J].Physical Review B,2009,79(24):245-311.
[29]RYZHII V,RYZHII M,MITIn V,et al.Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures[J].Journal of Applied Physics,2010,107(5):054512-1-054512-7.
[30]VICARELLI L,VITIELLO M S,COQUILLAT D,et al.Graphene field-effect transistors as room-temperature terahertz detectors[J].Nature Materials,2012,11(10):865-871.
[31]MITTENDORFF M,WINNERL S,KAMANN J,et al.Ultrafast graphene-based broadband THz detector[J].Applied Physics Letters,2013,103(2):021113-1-021113-4.
[32]ZAK A,ANDERSSON M A,BAUER M,et al.Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene[J].Nano Letters,2014,14(10):5834-5838.
[33]SUN J,LINDVALL N,COLE M T,et al.Low partial pressure chemical vapor deposition of graphene on copper[J].IEEE Transactions on Nanotechnology,2012,11(2):255-260.
[34]冯德军,宋磊,季伟,等.太赫兹波探测器技术研究进展[J].光通信技术,2014,38(1):5-8.(FENG Dejun,SONG Lei,JI Wei,et al.Research progress of THz wave detection[J].Optical Communication Technology,2014,38(1):5-8.)
[35]RYZHII V,OTSUJI T,RYZHII M,et al.Double graphene-layer plasma resonances terahertz detector[J].Journal of Physics D:Applied Physics,2012,45(30):302001-1-302001-6.
[36]SPIRITO D,COQUILLAT D,DE BONIS S L,et al.High performance bilayer-graphene terahertz detectors[J].Applied Physics Letters,2014,104(6):061111-1-061111-5.
[37]YANG Xinxin,SUN Jiandong,QIN Hua,et al.Room-temperature terahertz detection based on CVD graphene transistor[J].Chinese Physics B,2015,24(4):047206-1-047206-5.
[38]QIN H,SUN J,LIANG S,et al.Room-temperature,low-impedance and high-sensitivity terahertz direct detector based on bilayer graphene field-effect transistor[J].Carbon,2017(116):760-765.
[39]MURAVIEV A V,RUMYANTSEV S L,LIU G,et al.Plasmonic and bolometric terahertz detection by graphene field-effect transistor[J].Applied Physics Letters,2013,103(18):181114-1-181114-4.
[2]杨光鲲,袁斌,谢东彦,等.太赫兹技术在军事领域的应用[J].激光与红外,2011,41(4):376-380.(YANG Guangkun,YUAN Bin,XIE Dongyan,et al.Analysis on the use of THz technology in the military application[J].Laser and Infrared,2011,41(4):376-380.)
[3]赵国忠,申彦春,刘影,等.太赫兹技术在军事和安全领域的应用[J].电子测量与仪器学报,2015(8):1097-1101.(ZHAO Guozhong,SHEN Yanchun,LIU Ying,et al.Application of terahertz technology in military and security field[J].Journal of Electronic Measurement and Instrument,2015(8):1097-1101.)
[4]闵碧波,曾嫦娥,印欣,等.太赫兹技术在军事和航天领域的应用[J].太赫兹科学与电子信息学报,2014,12(3):351-354.(MIN Bibo,ZENG Change,YIN Xin,et al.Application of terahertz techniques in military and space[J].Journal of Terahertz Science and Electronic Information Technology,2014,12(3):351-354.)
[5]郑新,刘超.太赫兹技术的发展及在雷达和通讯系统中的应用(II)[J].微波学报,2011,27(1):1-5.(ZHENG Xin,LIU Chao.Recent development of THz technology and its application in radar and communication system(II)[J].Journal of Microwaves,2011,27(1):1-5.)
[6]KLEINE-OSTMANN T,NAGATSUMA T.A review on terahertz communications research[J].Journal of Infrared,Millimeter,and Terahertz Waves,2011,32(2):143-171.
[7]SIEGEL P H.Terahertz technology in biology and medicine[J].IEEE Transactions on Microwave Theory and Techniques,2004,52(10):2438-2447.
[8]周俊,刘盛纲.太赫兹生物医学应用的研究进展[J].现代应用物理,2014,5(2):85-97.(ZHOU Jun,LIU Shenggang.Research progress of terahertz biomedical applications[J].Modern Applied Physics,2014,5(2):85-97.)
[9]陆益敏,汪家春,时家明,等.太赫兹技术在烟尘与风沙探测中的应用[J].红外与激光工程,2010,39(3):487-490.(LU Yimin,WANG Jiachun,SHI Jiaming,et al.Application of THz technology for detection in soot and wind-blown sand[J].Infrared and Laser Engineering,2010,39(3):487-490.)
[10]吕晶.表面微纳结构的太赫兹波谱特性研究[D].北京:北京工业大学,2015.(LYU Jing.Research on terahertz spectroscopy properties of the surface micronano structures[D].Beijing:Beijing University of Technology,2015.)
[11]肖健,高爱华.光电导天线产生太赫兹波的研究[J].应用光学,2010,31(3):395-399.(XIAO Jian,GAO Aihua.Terahertz generation with photoconductive antenna[J].Journal of Applied Optics,2010,31(3):395-399.)
[12]SMITH F W,LE H Q,DIADIUK V,et al.Picosecond Ga As-based photoconductive optoelectronic detectors[J].Applied Physics Letters,1989,54(10):890-892.
[13]李铁元,娄采云,王黎,等.低温生长砷化镓光电导天线产生太赫兹波[J].中国激光,2009,36(4):978-982.(LI Tieyuan,LOU Caiyun,WANG Li,et al.Terahertz wave generation with low-temperature-grown Ga As photoconductive antennas[J].Chinese Journal of Lasers,2009,36(4):978-982.)
[14]邹锶.光电导天线的太赫兹时域光谱的系统的研究[D].武汉:华中科技大学,2013.(ZOU Si.The investigation of terahertz time-domain spectroscopy systems based on photoconductive antennae[D].Wuhan,China:Huazhong University of Science&Technology,2013.)
[15]金飚兵,单文磊,郭旭光,等.太赫兹检测技术[J].物理,2013,42(11):770-780.(JIN Biaobing,SHAN Wenlei,GUO Xuguang,et al.Terahertz detectors[J].Physics,2013,42(11):770-780.)
[16]YAGOUBOV P,KROUG M,MERKEL H,et al.Noise temperature and local oscillator power requirement of Nb N phononcooled hot electron bolometric mixers at terahertz frequencies[J].Applied Physics Letters,1998,73(19):2814-2816.
[17]RICHARDS P L.Bolometers for infrared and millimeter waves[J].Journal of Applied Physics,1994,76(1):1-24.
[18]HOU J W,FAROOQUI K,TIMBIE P T,et al.Monolithic silicon bolometers as sensitive MM-wave detectors[C]//IEEE MTT-S International Microwave Symposium Digest.Orlando,FL,USA:IEEE,1995(3):1347-1350.
[19]罗振飞,周逊,李赜宇,等.基于氧化钒热敏特性的太赫兹探测器[J].太赫兹科学与电子信息学报,2013,11(3):328-331.(LUO Zhenfei,ZHOU Xun,LI Zeyu,et al.Terahertz detectors based on the thermal sensing characteristics of vanadium oxides[J].Journal of Terahertz Science and Electronic Information Technology,2013,11(3):328-331.)
[20]谢佳林.基于钽酸锂晶体的热释电太赫兹探测系统的设计[D].成都:电子科技大学,2015.(XIE Jialin.A design of a system for pyroelectric terahertz detectors based on lithium tantalite[D].Chengdu,China:University of Electronic Science and Technology of China,2015.)
[21]GOLAY M J E.The theoretical and practical sensitivity of the pneumatic infrared detector[J].Review of Scientific Instruments,1949,20(11):816-820.
[22]SCHELLER M,YARBOROUGH J M,MOLONEY J V,et al.Room temperature continuous wave milliwatt terahertz source[J].Optics Express,2010,18(26):27112-27117.
[23]DYAKONOV M,SHUR M.Shallow water analogy for a ballistic field effect transistor:new mechanism of plasma wave generation by dc current[J].Physical Review Letters,1993,71(15):2465-2468.
[24]杜艳丽,刘晓雯,段智勇,等.太赫兹波探测器的研究进展[J].半导体光电,2009,30(4):481-485.(DU Yanli,LIU Xiaowen,DUAN Zhiyong,et al.Research progresses on terahertz detectors[J].Semiconductor Optoelectronics,2009,30(4):481-485.)
[25]NOVOSELOV K S,GEIM A K,MOROZOV S V,et al.Electric field effect in atomically thin carbon films[J].Science,2004,306(5696):666-669.
[26]BALANDIN A A,GHOSH S,BAO W,et al.Superior thermal conductivity of single-layer graphene[J].Nano Letters,2008,8(3):902-907.
[27]杨正龙,刘芯岩,卜弋龙,等.石墨烯场效应晶体管研究进展[J].固体电子学研究与进展,2014(4):345-349.(YANG Zhenglong,LIU Xinyan,BU Yilong,et al.Reserach progress of graphene based field effect transistor[J].Research&Progress of SSE,2014(4):345-349.)
[28]RYZHII V,RYZHII M.Graphene bilayer field-effect phototransistor for terahertz and infrared detection[J].Physical Review B,2009,79(24):245-311.
[29]RYZHII V,RYZHII M,MITIn V,et al.Terahertz and infrared photodetection using p-i-n multiple-graphene-layer structures[J].Journal of Applied Physics,2010,107(5):054512-1-054512-7.
[30]VICARELLI L,VITIELLO M S,COQUILLAT D,et al.Graphene field-effect transistors as room-temperature terahertz detectors[J].Nature Materials,2012,11(10):865-871.
[31]MITTENDORFF M,WINNERL S,KAMANN J,et al.Ultrafast graphene-based broadband THz detector[J].Applied Physics Letters,2013,103(2):021113-1-021113-4.
[32]ZAK A,ANDERSSON M A,BAUER M,et al.Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene[J].Nano Letters,2014,14(10):5834-5838.
[33]SUN J,LINDVALL N,COLE M T,et al.Low partial pressure chemical vapor deposition of graphene on copper[J].IEEE Transactions on Nanotechnology,2012,11(2):255-260.
[34]冯德军,宋磊,季伟,等.太赫兹波探测器技术研究进展[J].光通信技术,2014,38(1):5-8.(FENG Dejun,SONG Lei,JI Wei,et al.Research progress of THz wave detection[J].Optical Communication Technology,2014,38(1):5-8.)
[35]RYZHII V,OTSUJI T,RYZHII M,et al.Double graphene-layer plasma resonances terahertz detector[J].Journal of Physics D:Applied Physics,2012,45(30):302001-1-302001-6.
[36]SPIRITO D,COQUILLAT D,DE BONIS S L,et al.High performance bilayer-graphene terahertz detectors[J].Applied Physics Letters,2014,104(6):061111-1-061111-5.
[37]YANG Xinxin,SUN Jiandong,QIN Hua,et al.Room-temperature terahertz detection based on CVD graphene transistor[J].Chinese Physics B,2015,24(4):047206-1-047206-5.
[38]QIN H,SUN J,LIANG S,et al.Room-temperature,low-impedance and high-sensitivity terahertz direct detector based on bilayer graphene field-effect transistor[J].Carbon,2017(116):760-765.
[39]MURAVIEV A V,RUMYANTSEV S L,LIU G,et al.Plasmonic and bolometric terahertz detection by graphene field-effect transistor[J].Applied Physics Letters,2013,103(18):181114-1-181114-4.