光刻法图案化石墨烯研究
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摘要
介绍了光刻法石墨烯的制备方法,分析了光刻工艺过后石墨烯方阻升高的不良机理,并给出了相应的优化方案。首先,根据半导体工艺研发制程完成石墨烯图案化工艺方案,并对工艺方案进行有效优化。接着,分析了石墨烯光刻法图案化后方阻升高的机理。最后,通过改善工艺方案,增加金属湿法刻蚀的步骤,解决石墨烯方阻升高的问题。实验结果表明:通过光刻法制得的石墨烯具有更高的图案精细度,关键尺寸可达到5μm。双层石墨烯膜的方阻在光刻法图案化后,通过工艺改善可以保持原始膜最初阻值约330Ω/,甚至可以降低到270Ω/左右。光刻法图案化石墨烯技术,既能保证石墨烯图案尺寸精度,又可以保持甚至降低石墨烯方阻值,适合于量产开发。
The preparation method and square resistance improvement method of patterning graphene by photolithography were introduced.The process and the bad mechanism for increasing square resistance of patterning graphene by photolithography were analyzed.Firstly,the patterning process of graphene was completed and optimized effectively through the development of the semiconductor process.Then,the mechanism for increasing square resistance of patterning graphene by photolithography was analyzed.Finally,the problem on increasing square resistance of patterning graphene by photolithographyg was improved by adjusting the process steps to increase the metal wet etching adjustment.The experimental results show that the dimensional accuracy of patterning graphene can be improved by photolithography,which the critical dimensions can reach 5μm.The initial square resistance of double-layer graphene films after photolithographic patterning can be kept at about 330Ω/□,and even reduced to 270Ω/□by process improvement.Patterning graphene by photolithography can not only ensure the degree of refinement,but also improve the square resistance of graphene film,which is more suitable for mass production and development.
The preparation method and square resistance improvement method of patterning graphene by photolithography were introduced.The process and the bad mechanism for increasing square resistance of patterning graphene by photolithography were analyzed.Firstly,the patterning process of graphene was completed and optimized effectively through the development of the semiconductor process.Then,the mechanism for increasing square resistance of patterning graphene by photolithography was analyzed.Finally,the problem on increasing square resistance of patterning graphene by photolithographyg was improved by adjusting the process steps to increase the metal wet etching adjustment.The experimental results show that the dimensional accuracy of patterning graphene can be improved by photolithography,which the critical dimensions can reach 5μm.The initial square resistance of double-layer graphene films after photolithographic patterning can be kept at about 330Ω/□,and even reduced to 270Ω/□by process improvement.Patterning graphene by photolithography can not only ensure the degree of refinement,but also improve the square resistance of graphene film,which is more suitable for mass production and development.
引文
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[2]陈世琴,陈梦婕,邱龙臻.石墨烯电极有机薄膜晶体管研究[J].液晶与显示,2012,27(5):595-598.CHEN S Q,CHEN M J,QIU L Z.Organic thin-film transistor based on graphene electrodes[J].Chinese Journal of Liquid Crystals and Displays,2012,27(5):595-598.(in Chinese)
[3]肖淑娟,于守武,谭小耀.石墨烯的制备方法及其性能研究[J].化学世界,2015,56(6):378-382.XIAO S J,YU S W,TAN X Y.A study on the preparation and performance of graphene[J].Chemical World,2015,56(6):378-382.(in Chinese)
[4]匡达,胡文彬.石墨烯复合材料的研究进展[J].无机材料学报,2013,28(3):235-246.KUANG D,HU W B.Research progress of graphene composites[J].Journal of Inorganic Materials,2013,28(3):235-246.(in Chinese)
[5]朱宏伟,徐志平,谢丹.石墨烯:结构、制备方法与性能表征[M].北京:清华大学出版社,2011.ZHU H W,XU Z P,XIE D.Graphene:Structure,Preparation and Characterization[M].Beijing:Tsinghua U-niversity Press,2011.(in Chinese)
[6]于桂亮,黄书腾.浅析石墨烯的性质与应用前景[J].科技风,2011(21):91-91.YU G L,HUANG S T.Analysis on the properties and application prospects of grapheme[J].Technology Wind,2011(21):91-91.(in Chinese)
[7]傅强,包信和.石墨烯的化学研究进展[J].科学通报,2009,54(18):2657-2666.FU Q,BAO X H.Progress ingraphene chemistry[J].Chinese Science Bulletin,2009,54(18):2657-2666.(in Chinese)
[8]王敏.石墨烯触摸屏技术应用初探[J].电子世界,2014(13):79-81.WANG M.Application of graphene touch screen technology[J].Electronics World,2014(13):79-81.(in Chinese)
[9]朱振峰,程莎,董晓楠.石墨烯的制备和应用[J].功能材料,2013,44(21):3060-3064,3071.ZHU Z F,CHENG S,DONG X N.The preparation and application of graphene[J].Journal of Functional Materials,2013,44(21):3060-3064,3071.(in Chinese)
[10]胡耀娟,金娟,张卉,等.石墨烯的制备、功能化及在化学中的应用[J].物理化学学报,2010,26(8):2073-2086.YU Y J,JIN J,ZHANG H,et al.Graphene:synthesis,functionalization and applications in chemistry[J].Acta Physico-Chimica Sinica,2010,26(8):2073-2086.(in Chinese)
[11]庞渊源.石墨烯在半导体光电器件中的应用[J].液晶与显示,2011,26(3):296-300.PANG Y Y.Application of graphene in semiconductor optoelectronic devices[J].Chinese Journal of Liquid Crystals and Displays,2011,26(3):296-300.(in Chinese)
[12]许坤,王一帆,解意洋,等.基于石墨烯-ZnO纳米线的复合电极在GaN LED中的应用[J].发光学报,2016,37(12):1554-1559.XU K,WANG Y F,XIE Y Y,et al.Graphene-ZnO nanowires based complex electorde used as transparency conductive layer in GaN LED[J].Chinese Journal of Luminescence,2016,37(12):1554-1559.(in Chinese)
[13]李云飞,陈洋,毕宴钢,等.还原石墨烯氧化物-银纳米线柔性复合电极的制备与性能研究[J].发光学报,2015,36(5):545-551.LI Y F,CHEN Y,BI Y G,et al.Fabrication and characterization of reduced graphene oxide/silver nanowires flexible hybrid electrodes[J].Chinese Journal of Luminescence,2015,36(5):545-551.(in Chinese)
[14]袁明文.石墨烯基电子学研究进展[J].微纳电子技术,2010,47(10):589-594.YUAN M W.Research progress of graphene based electronics[J].Micronanoelectronic Technology,2010,47(10):589-594.(in Chinese)