SiC单晶切割过程中接触弧长建模与实验
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摘要
Si C单晶具有良好的物理和机械性能,广泛应用于大功率器件和集成电路行业,但因高的硬度和脆性,使其切割、研磨和抛光加工过程成为难点。在固结金刚石磨粒的线锯切割Si C单晶过程中,由于受各种因素的影响,使得切割力呈动态变化,而影响切割力的直接因素就是工件与线锯之间的接触弧长。根据线锯和工件的运动过程,分析接触弧长产生的过程,建立往复式线锯切割过程中接触弧长的数学模型,并对该过程中实验和仿真产生的误差进行了分析。以单颗磨粒的切深为基础,确定模型中的切削深度。仿真和实验结果表明,建立的模型可以较准确地预测不同工艺参数下的接触弧长。
Silicon carbide( Si C) is widely used in high-power devices and IC industry due to its good physical and mechanical properties. However,it is difficult to be processed( cutting,lapping and polishing) because of its high hardness and brittle. In the fixed diamond abrasive wire sawing of Si C monocrystal,the cutting force changes dynamically due to various factors. The effect of direct factor on cutting force is contact arc length between wire saw and workpiece. The moving processes of wire saw and worpiece are analyzed for the generation of contact arc length. A model of wire sawing process with reciprocating movement is established. The simulated and experimental errors are also discussed,and the cutting depth of model is determined based on the single abrasive scratch experiment. The simulation and experimental results show that the proposed model can predict the contact arc length in terms of different processing parameters.
Silicon carbide( Si C) is widely used in high-power devices and IC industry due to its good physical and mechanical properties. However,it is difficult to be processed( cutting,lapping and polishing) because of its high hardness and brittle. In the fixed diamond abrasive wire sawing of Si C monocrystal,the cutting force changes dynamically due to various factors. The effect of direct factor on cutting force is contact arc length between wire saw and workpiece. The moving processes of wire saw and worpiece are analyzed for the generation of contact arc length. A model of wire sawing process with reciprocating movement is established. The simulated and experimental errors are also discussed,and the cutting depth of model is determined based on the single abrasive scratch experiment. The simulation and experimental results show that the proposed model can predict the contact arc length in terms of different processing parameters.
引文
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[2]Ramesh K,Huang H,Yin L.Analytical and experimental investigation of coolant velocity in high speed grinding[J].International Journal of Machine Tools and Manufacture,2004,44(10):1069-1076.
[3]Hecker R L,Liang S Y.Predictive modeling of surface roughness in grinding[J].International Journal of Machine Tools and Manufacture,2003,43(8):755-761.
[4]Hardin C W,Qu J,Shih A J.Fixed abrasive diamond wire saw slicing of single-crystal silicon carbide wafers[J].Materials and Manufacturing Processes,2004,19(2):355-367.
[5]Bhagavat S,Kao I.Theoretical analysis on the effects of crystal anisotropy on wiresawing process and application to wafer slicing[J].International Journal of Machine Tools and Manufacture,2006,46(5):531-541.
[6]Yoshino M,Sivandam A,Kinochi Y.Critical depth of hard brittle materials on nano plastic forming[J].Journal of Advanced Mechanical Design Systems Manufacturing,2008,2(1):59.
[7]Agarwal S,Rao P V.Experimental investigation of surface/subsurface damage formation and material removal mechanisms in Si C grinding[J].International Journal of Machine Tools and Manufacture,2008,48(6):698-710.
[8]Agarwal S,Rao P V.Grinding characteristics,material removal and damage formation mechanisms in high removal rate grinding of silicon carbide[J].International Journal of Machine Tools and Manufacture,2010,50(12):1077-1087.
[9]Ma L J,Gong Y D,Chen X H.Study on surface roughness model and surface forming mechanism of ceramics in quick point grinding[J].International Journal of Machine Tools and Manufacture,2014,77(2):82-92.
[10]Satyarthi M K,Pandey P M.Modeling of material removal rate in electric discharge grinding process[J].International Journal of Machine Tools and Manufacture,2013,74:65-73.
[11]Li S J,Du S,Tang A F,et al.Force modeling and control of Si C monocrystal wafer processing[J].Journal of Manufacturing Science and Engineering,2015,137(6):061003-1-061003-10.
[12]刘永,李淑娟,李言,等.基于中心复合设计试验的Si C单晶片超声振动加工工艺参数优化[J].机械工程学报,2013,49(7):193-198.LIU Yong,LI Shu-juan,LI Yan,et al.Central composite design test based parameters optimizing for compound machining with ultrasonic vibration on Si C wafer[J].Journal of Mechanical Engineering,2013,49(7):193-198.(in Chinese)
[13]李淑娟,刘永,侯晓丽,等.Si C单晶片加工过程中切割力的分析与建模[J].机械工程学报,2015,51(23):189-204.LI Shu-juan,LIU Yong,HOU Xiao-li,et al.Analysis and modeling cutting force for Si C monocrystal wafer processing[J].Journal of Mechanical Engineering,2015,51(23):189-204.(in Chinese)