SiC单晶片切割力的广义预测控制
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摘要
Si C单晶因优良的物理和力学性能而大量用于大功率器件和IC行业,但由于材料的高硬度和高脆性,使其加工过程变得困难。基于进给量与切割力的差分方程,设计广义预测控制器控制切割力。结果表明:所设计控制器能够很好地跟踪不同信号,具有良好的鲁棒性;相比与普通的切割过程,能够提高加工效率,并获得较好的加工表面。
Silicon carbide(Si C)monocrystal is widely used in high-power devices and IC industry due to its good physical and mechanical property. However,it is difficult to process because of its high hardness and brittle. Based on the difference equation of given feed and cutting force,this paper designed generalized predictive controller to control the cutting force in cutting process. The experimental results show that the controller can catch the variable singles,and has a good robustness.Compared with normal cutting process,it increases the cutting efficiency and acquires better wafer surface.
Silicon carbide(Si C)monocrystal is widely used in high-power devices and IC industry due to its good physical and mechanical property. However,it is difficult to process because of its high hardness and brittle. Based on the difference equation of given feed and cutting force,this paper designed generalized predictive controller to control the cutting force in cutting process. The experimental results show that the controller can catch the variable singles,and has a good robustness.Compared with normal cutting process,it increases the cutting efficiency and acquires better wafer surface.
引文
[1]HARDIN Craig W,QU Jun,SHIH Albert J.Fixed abrasive diamond wire saw slicing of single-crystal silicon carbide wafers[J].Materials and Manufacturing Processes,2004,19(2):355-367.
[2]CVETKOVI S,MORSBACH C,RISSING L,et al.Ultra-precision dicing and wire sawing of silicon carbide(Si C)[J].Microelectron Eng,2011,88(8):2500-2504.
[3]高伟,窦百香,刘伟.固结磨料金刚石线锯制造方法和切割形式的研究进展[J].金刚石与磨料磨具工程,2008(5):30-34.
[4]张辽远,褚桂君,慕丽.电镀金刚石线锯锯切轨迹的研究[J].兵工学报,2011,32(5):607-612.
[5]崔丹,李淑娟,胡超.Si C单晶片切割过程切割力的建模和预测[J].机械科学与技术,2014,33(8):1161-1166.
[6]刘永,李淑娟,李言.基于中心复合设计试验的Si C单晶片超声振动加工工艺参数优化[J].机械工程学报,2013,49(7):193-198.
[7]HADDAD W,CHELLABOINA V.Nonlinear dynamical systems and control:A lyapunov-based ap-pproach[M].New Jersey:Princeton University Press,2008:178-193.
[8]DU Siming,Li Shujuan,TANG Aofei,et al.Force modeling and control of Si C monocrystal wafer processing[J].Transaction of ASME,Journal of Manufacturing Science and Engineering,2015,137(6):1003-1-1003-10.
[9]DIEHL M,AMRIT R,RAWLINGS J B.A Lyapunov function for economic optimizing model predict control[J].IEEE Trans Automat Contr,2011,56(3):703.
[10]陈虹.模型预测控制[M].北京:科学工业出版社,2013:1-7.
[11]邹涛,丁宝苍,张端.模型预测控制工程应用导论[M].北京:化学工业出版社,2010:181-196.
[12]董朝轶,陈晓艳,李健.煤样燃点检测仪表温度自适应控制系统设计[J].仪器仪表学报,2011,32(9):2114-2120.
[2]CVETKOVI S,MORSBACH C,RISSING L,et al.Ultra-precision dicing and wire sawing of silicon carbide(Si C)[J].Microelectron Eng,2011,88(8):2500-2504.
[3]高伟,窦百香,刘伟.固结磨料金刚石线锯制造方法和切割形式的研究进展[J].金刚石与磨料磨具工程,2008(5):30-34.
[4]张辽远,褚桂君,慕丽.电镀金刚石线锯锯切轨迹的研究[J].兵工学报,2011,32(5):607-612.
[5]崔丹,李淑娟,胡超.Si C单晶片切割过程切割力的建模和预测[J].机械科学与技术,2014,33(8):1161-1166.
[6]刘永,李淑娟,李言.基于中心复合设计试验的Si C单晶片超声振动加工工艺参数优化[J].机械工程学报,2013,49(7):193-198.
[7]HADDAD W,CHELLABOINA V.Nonlinear dynamical systems and control:A lyapunov-based ap-pproach[M].New Jersey:Princeton University Press,2008:178-193.
[8]DU Siming,Li Shujuan,TANG Aofei,et al.Force modeling and control of Si C monocrystal wafer processing[J].Transaction of ASME,Journal of Manufacturing Science and Engineering,2015,137(6):1003-1-1003-10.
[9]DIEHL M,AMRIT R,RAWLINGS J B.A Lyapunov function for economic optimizing model predict control[J].IEEE Trans Automat Contr,2011,56(3):703.
[10]陈虹.模型预测控制[M].北京:科学工业出版社,2013:1-7.
[11]邹涛,丁宝苍,张端.模型预测控制工程应用导论[M].北京:化学工业出版社,2010:181-196.
[12]董朝轶,陈晓艳,李健.煤样燃点检测仪表温度自适应控制系统设计[J].仪器仪表学报,2011,32(9):2114-2120.