808nm垂直腔面发射激光器阵列抽运的全固态激光器研究进展
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摘要
与传统的边发射半导体激光器相比,垂直腔面发射激光器(VCSEL)具有线宽窄、光束质量好、可靠性高和制造成本低等优点。随着808nm VCSEL阵列的输出功率和转换效率的提高,VCSEL阵列成为了固态激光器抽运源的新选择。介绍了VCSEL的性能优势、应用场合及发展现状,综述了VCSEL阵列抽运的固态激光器的研究进展,讨论了其技术缺陷及发展前景。
When compared with the traditional edge-emitting semiconductor lasers,the vertical-cavity surfaceemitting lasers(VCSELs)offer several advantageous properties,including a narrow line width,superior beam quality,high reliability,and low manufacturing cost.Recently,with an increase in the output power and power conversion efficiency of the 808 nm VCSEL arrays,they have become an attractive alternative for the pumping sources of solid-state lasers.In this study,we introduce the performance advantages,applications,and status of the VCSELs.As for the VCSEL-array-pumped solid-state lasers,the research progress is reviewed,and the development prospect as well as their technical shortcomings are discussed.
When compared with the traditional edge-emitting semiconductor lasers,the vertical-cavity surfaceemitting lasers(VCSELs)offer several advantageous properties,including a narrow line width,superior beam quality,high reliability,and low manufacturing cost.Recently,with an increase in the output power and power conversion efficiency of the 808 nm VCSEL arrays,they have become an attractive alternative for the pumping sources of solid-state lasers.In this study,we introduce the performance advantages,applications,and status of the VCSELs.As for the VCSEL-array-pumped solid-state lasers,the research progress is reviewed,and the development prospect as well as their technical shortcomings are discussed.
引文
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[4] Choquette K D,Hou H Q.Vertical-cavity surface emittinglasers:movingfromresearchto manufacturing[J].Proceedings of the IEEE,1997,85(11):1730-1739.
[5] Wang C,Geske J,Garrett H,et al.Large-area high-power VCSEL pump arrays optimized for highenergy lasers[J].Proceedings of SPIE,2015,8381:83811R.
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[7] Moser A,Latta E E.Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs-GaAs laser facets[J].Journal of Applied Physics,1992,71(10):4848-4853.
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[18] van Leeuwen R,Xiong Y H,Watkins L S,et al.High power 808nm VCSEL arrays for pumping of compact pulsed high energy NdYAG lasers operating at 946nm and 1064nm for blue and UV light generation[J].Proceedings of SPIE,2011,7912:79120Z.
[19] van Leeuwen R,Zhao P,Chen T,et al.High power high repetition rate VCSEL array side-pumped pulsed blue laser[J].Proceedings of SPIE,2013,8599:85991I.
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[22] Zhang Y,Ning Y Q,Zhang L S,et al.Design and comparisonofGaAs, GaAsPandInGaAlAs quantum-well active regions for 808-nm VCSELs[J].Optics Express,2011,19(13):12569-12581.
[23] Zhang Y,Ning Y Q,Zhang J S,et al.Structural design of 808nm InGaAlAs vertical-cavity surfaceemitting laser[J].Chinese Journal of Lasers,2011,38(9):0902007.张艳,宁永强,张金胜,等.808nm InGaAlAs垂直腔面发射激光器的结构设计[J].中国激光,2011,38(9):0902007.
[24] Zhang Y.Structural design and fabrication of 808-nm vertical-cavitysurface-emittinglaser[D].Changchun:Graduate University of the Chinese Academy of Sciences,2011:71-72.张艳.808-nm垂直腔面发射激光器的结构设计与研制[D].长春:中国科学院研究生院,2011:71-72.
[25] Zhang J S. Investigations on the high power semiconductor laser structure[D]. Changchun:Graduate University of the Chinese Academy of Sciences,2014:89-92.张金胜.高功率半导体激光器结构研究[D].长春:中国科学院研究生院,2014:89-92.
[26] Hao Y Q,Luo Y,Feng Y,et al.Large aperture vertical cavity surface emitting laser with distributedring contact[J].Applied Optics,2011,50(7):1034-1037.
[27] Feng Y,Feng D W,Hao Y Q,et al.Temperature characteristic of 808nm VCSELs with large aperture[J].Proceedings of SPIE,2015,9521:95210L.
[28] Koechner W.Solid-state laser engineering[M].Berlin:Springer,2005:63-65.
[29] Wu J,Iordache G,Summers H D,et al.Optical characteristics of VCSEL pumped microchip lasers[J].Optics Communications,2001,196:251-256.
[30] Lan Y P,Chen Y F,Huang K F,et al.Oxideconfined vertical-cavity surface-emitting laser pumped NdYVO4 microchip lasers[J].IEEE Photonics Technology Letters,2002,14(3):272-274.
[31] Hao Q,Ma L,Yan L,et al.A fundamental mode NdGdVO4laser pumped by a large aperture 808nm VCSEL[J].Laser Physics Letters,2013,10(5):055003.
[32] Goldberg L, McIntosh C,Cole B. VCSEL endpumped passively Q-switched NdYAG laser with adjustable pulse energy[J].Optics Express,2011,19(5):4261-4267.
[33] Xiong Y H,van Leeuwen R,Watkins L S,et al.High power VCSEL array pumped Q-switched Nd:YAG lasers[J].Proceedings of SPIE,2012,8235:82350M.
[34] Cole B, Hays A, McIntosh C,et al.Compact VCSEL pumped Q-switched NdYAG lasers[J].Proceedings of SPIE,2012,8235:82350O.
[35] Alimohammadian E,Major A.Modeling of a CW NdYVO4laser longitudinally pumped by high power VCSEL modules at 808nm[J].Proceedings of SPIE,2014,8959:89591D.
[36] Li S,Liu L,Chen R Z,et al.Development of a compact vertical-cavity surface-emitting laser endpumped actively Q-switched laser for laser-induced breakdown spectroscopy[J].Review of Scientific Instruments,2016,87(3):033114.
[37] van Leeuwen R,Xu B,Wang Q,et al.Passively Qswitched VCSEL-pumped NdYAG laser with 47mJ pulse energy[J].Proceedings of SPIE,2017,10082:100820L.
[38] Seurin J F,Xu G Y,Miglo A,et al.High-power vertical-cavity surface-emitting lasers for solid-state laser pumping[J].Proceedings of SPIE,2012,8276:827609.
[39] Chen T,Xu B,Leeuwen R V,et al.0.9-W compact UV pulsed lasers using high-power VCSEL array side-pumping[J].Proceedings of SPIE,2013,8599:85991J.
[40] van Leeuwen R,Chen T,Watkins L,etal.1 W frequency-doubled VCSEL-pumped blue laser with high pulse energy[J].Proceedings of SPIE,2015,9342:93420N.
[41] Xie W,Ma X H,Zhu X L,et al.Temperature insensitive high energy Q-switched NdYAG slab laser[J].Laser Physics Letters,2017,14(6):065803.
[42] Crépy B,Le NevéM,Montagne J,et al.Efficient,diode temperature insensitive NdYAG hybrid longitudinal/transversal-pumped zig-zag slab laser:delta concept[C]∥Advanced Solid-State Lasers,February3-6, 2002, QuébecCity, Canada.Washington,D.C.:OSA,2002:TuC4.
[43] van Leeuwen R,Xu B,Chen T,et al.VCSELpumped passively Q-switched monolithic solid-state lasers[J]. Proceedings of SPIE, 2016, 9726:97260U.
[44] Cole B, Hays A, McIntosh C,et al. Wide temperature operation of a VCSEL pumped 355nm frequency tripled NdYAG laser[J].Proceedings of SPIE,2013,8599:85991L.
[45] Wintner E,Kofler H,Srivastava D K,et al.Laser plasma ignition:status,perspectives,solutions[J].Proceedings of SPIE,2013,9065:90650B.
[46] Lu S W,Meng J,Zhao X Q,et al.Temperature insensitive Nd∶GdVO4laser with high peak power and narrow pulse width[J].Chinese Journal of Lasers,2018,45(4):0401009.鲁绍文,孟洁,赵学强,等.高峰值功率窄脉宽宽温Nd∶GdVO4激光器[J].中国激光,2018,45(4):0401009.
[47] Yu Z Z,Hou X,Zhou Q L,et al.VCSEL pumped compact wide-temperature Nd∶YAG laser and grazing-incidence amplifier[J].Chinese Journal of Lasers,2013,40(6):0602003.于真真,侯霞,周群立,等.垂直腔面发射激光器抽运小型宽温Nd∶YAG激光器及掠入射式放大器的研究[J].中国激光,2013,40(6):0602003.
[48] Chen S L,Zhang X,Jiang J,et al.VCSEL sidepumped all solid-state lasers[J].Chinese Journal of Lasers,2018,45(10):1001001.陈思露,张鑫,蒋静,等.VCSEL侧面抽运的全固态激光器[J].中国激光,2018,45(10):1001001.
[49] Bai J R,Liu Y,Zhong C Y,et al.Narrow pulse width lasers operating over wide range of low temperature[J].Chinese Journal of Lasers,2019,46(1):0101004.白家荣,刘源,钟朝阳,等.可低温工作的窄脉冲宽温激光器[J].中国激光,2019,46(1):0101004.
[50] Tsunekane M, Taira T. Compact and wide temperature acceptance of VCSEL-pumped microlaser for laser ignition[C]∥Advanced Solid-State Lasers Congress,October 27-November 1,2013,Paris,France. Washington D.C.:OSA,2013:ATu3A.58.
[2] Zhou D L,Seurin J F,Xu G Y,et al.Progress on high-power high-brightness VCSELs and applications[J].Proceedings of SPIE,2015,9381:93810B.
[3] Miller M,Grabherr M,King R,et al.Improved output performance of high-power VCSELs[J].IEEE Journal of Selected Topics in Quantum Electronics,2001,7(2):210-216.
[4] Choquette K D,Hou H Q.Vertical-cavity surface emittinglasers:movingfromresearchto manufacturing[J].Proceedings of the IEEE,1997,85(11):1730-1739.
[5] Wang C,Geske J,Garrett H,et al.Large-area high-power VCSEL pump arrays optimized for highenergy lasers[J].Proceedings of SPIE,2015,8381:83811R.
[6] Guenter J K, Tatum J A, Clark A,et al.CommercializationofHoneywell′sVCSEL technology:further developments[J].Proceedings of SPIE,2015,4286:1-14.
[7] Moser A,Latta E E.Arrhenius parameters for the rate process leading to catastrophic damage of AlGaAs-GaAs laser facets[J].Journal of Applied Physics,1992,71(10):4848-4853.
[8] Zhou D L,Seurin J F,Xu G Y,et al.Progress on vertical-cavity surface-emitting laser arrays for infrared illumination applications[J].Proceedings of SPIE,2014,9001:90010E.
[9] Chen W B,Hou X.Laser in space application[M].Beijing:National Defense Industry Press,2016:206.陈卫标,侯霞.空间应用激光器[M].北京:国防工业出版社,2016:206.
[10] Soda H,Iga K I,Kitahara C,et al.GaInAsP/InP surface emitting injection lasers[J].Japanese Journal of Applied Physics,1979,18(12):2329-2330.
[11] Iga K,Ishikawa S, Ohkouchi S,et al.Roomtemperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laser[J].Applied Physics Letters,1984,45(4):348-350.
[12] Larsson A.Advances in VCSELs for communication and sensing[J].IEEE Journal of Selected Topics in Quantum Electronics,2011,17(6):1552-1567.
[13] Seurin J F, Xu G Y, Wang Q,et al. Highbrightness pump sources using 2DVCSEL arrays[J].Proceedings of SPIE,2010,7615:76150F.
[14] Seurin J F,Ghosh C L,Khalfin V,et al.Highpower high-efficiency 2D VCSEL arrays[J].Proceedings of SPIE,2008,6908:690808.
[15] Seurin J F,Xu G Y,Khalfin V,et al.Progress in high-power high-efficiency VCSEL arrays[J].Proceedings of SPIE,2009,7229:722903.
[16] Summers H D,Preston J M,Kemp A J,et al.Microchip laser with vertical-cavity surface-emitting laser diode pump[C]∥IEEE Conference on Lasers and Electro-Optics(IEEE Cat.No.99CH37013),May 28-28,1999,Baltimore, MD, USA. New York:IEEE,1999:517-518.
[17] Grabherr M,Miller M,Jaeger R,et al.Commercial VCSELs reach 0.1 W cw output power[J].Proceedings of SPIE,2004,5364:174-182.
[18] van Leeuwen R,Xiong Y H,Watkins L S,et al.High power 808nm VCSEL arrays for pumping of compact pulsed high energy NdYAG lasers operating at 946nm and 1064nm for blue and UV light generation[J].Proceedings of SPIE,2011,7912:79120Z.
[19] van Leeuwen R,Zhao P,Chen T,et al.High power high repetition rate VCSEL array side-pumped pulsed blue laser[J].Proceedings of SPIE,2013,8599:85991I.
[20] van Leeuwen R,Xiong Y H,Seurin J F,et al.High-power vertical-cavity surface-emitting lasers for diode pumped solid-state lasers[J].Proceedings of SPIE,2012,8381:83810I.
[21] Zhou D L,Seurin J F,Xu G Y,et al.Progress on high-power 808 nm VCSELs and applications[J].Proceedings of SPIE,2017,10122:1012206.
[22] Zhang Y,Ning Y Q,Zhang L S,et al.Design and comparisonofGaAs, GaAsPandInGaAlAs quantum-well active regions for 808-nm VCSELs[J].Optics Express,2011,19(13):12569-12581.
[23] Zhang Y,Ning Y Q,Zhang J S,et al.Structural design of 808nm InGaAlAs vertical-cavity surfaceemitting laser[J].Chinese Journal of Lasers,2011,38(9):0902007.张艳,宁永强,张金胜,等.808nm InGaAlAs垂直腔面发射激光器的结构设计[J].中国激光,2011,38(9):0902007.
[24] Zhang Y.Structural design and fabrication of 808-nm vertical-cavitysurface-emittinglaser[D].Changchun:Graduate University of the Chinese Academy of Sciences,2011:71-72.张艳.808-nm垂直腔面发射激光器的结构设计与研制[D].长春:中国科学院研究生院,2011:71-72.
[25] Zhang J S. Investigations on the high power semiconductor laser structure[D]. Changchun:Graduate University of the Chinese Academy of Sciences,2014:89-92.张金胜.高功率半导体激光器结构研究[D].长春:中国科学院研究生院,2014:89-92.
[26] Hao Y Q,Luo Y,Feng Y,et al.Large aperture vertical cavity surface emitting laser with distributedring contact[J].Applied Optics,2011,50(7):1034-1037.
[27] Feng Y,Feng D W,Hao Y Q,et al.Temperature characteristic of 808nm VCSELs with large aperture[J].Proceedings of SPIE,2015,9521:95210L.
[28] Koechner W.Solid-state laser engineering[M].Berlin:Springer,2005:63-65.
[29] Wu J,Iordache G,Summers H D,et al.Optical characteristics of VCSEL pumped microchip lasers[J].Optics Communications,2001,196:251-256.
[30] Lan Y P,Chen Y F,Huang K F,et al.Oxideconfined vertical-cavity surface-emitting laser pumped NdYVO4 microchip lasers[J].IEEE Photonics Technology Letters,2002,14(3):272-274.
[31] Hao Q,Ma L,Yan L,et al.A fundamental mode NdGdVO4laser pumped by a large aperture 808nm VCSEL[J].Laser Physics Letters,2013,10(5):055003.
[32] Goldberg L, McIntosh C,Cole B. VCSEL endpumped passively Q-switched NdYAG laser with adjustable pulse energy[J].Optics Express,2011,19(5):4261-4267.
[33] Xiong Y H,van Leeuwen R,Watkins L S,et al.High power VCSEL array pumped Q-switched Nd:YAG lasers[J].Proceedings of SPIE,2012,8235:82350M.
[34] Cole B, Hays A, McIntosh C,et al.Compact VCSEL pumped Q-switched NdYAG lasers[J].Proceedings of SPIE,2012,8235:82350O.
[35] Alimohammadian E,Major A.Modeling of a CW NdYVO4laser longitudinally pumped by high power VCSEL modules at 808nm[J].Proceedings of SPIE,2014,8959:89591D.
[36] Li S,Liu L,Chen R Z,et al.Development of a compact vertical-cavity surface-emitting laser endpumped actively Q-switched laser for laser-induced breakdown spectroscopy[J].Review of Scientific Instruments,2016,87(3):033114.
[37] van Leeuwen R,Xu B,Wang Q,et al.Passively Qswitched VCSEL-pumped NdYAG laser with 47mJ pulse energy[J].Proceedings of SPIE,2017,10082:100820L.
[38] Seurin J F,Xu G Y,Miglo A,et al.High-power vertical-cavity surface-emitting lasers for solid-state laser pumping[J].Proceedings of SPIE,2012,8276:827609.
[39] Chen T,Xu B,Leeuwen R V,et al.0.9-W compact UV pulsed lasers using high-power VCSEL array side-pumping[J].Proceedings of SPIE,2013,8599:85991J.
[40] van Leeuwen R,Chen T,Watkins L,etal.1 W frequency-doubled VCSEL-pumped blue laser with high pulse energy[J].Proceedings of SPIE,2015,9342:93420N.
[41] Xie W,Ma X H,Zhu X L,et al.Temperature insensitive high energy Q-switched NdYAG slab laser[J].Laser Physics Letters,2017,14(6):065803.
[42] Crépy B,Le NevéM,Montagne J,et al.Efficient,diode temperature insensitive NdYAG hybrid longitudinal/transversal-pumped zig-zag slab laser:delta concept[C]∥Advanced Solid-State Lasers,February3-6, 2002, QuébecCity, Canada.Washington,D.C.:OSA,2002:TuC4.
[43] van Leeuwen R,Xu B,Chen T,et al.VCSELpumped passively Q-switched monolithic solid-state lasers[J]. Proceedings of SPIE, 2016, 9726:97260U.
[44] Cole B, Hays A, McIntosh C,et al. Wide temperature operation of a VCSEL pumped 355nm frequency tripled NdYAG laser[J].Proceedings of SPIE,2013,8599:85991L.
[45] Wintner E,Kofler H,Srivastava D K,et al.Laser plasma ignition:status,perspectives,solutions[J].Proceedings of SPIE,2013,9065:90650B.
[46] Lu S W,Meng J,Zhao X Q,et al.Temperature insensitive Nd∶GdVO4laser with high peak power and narrow pulse width[J].Chinese Journal of Lasers,2018,45(4):0401009.鲁绍文,孟洁,赵学强,等.高峰值功率窄脉宽宽温Nd∶GdVO4激光器[J].中国激光,2018,45(4):0401009.
[47] Yu Z Z,Hou X,Zhou Q L,et al.VCSEL pumped compact wide-temperature Nd∶YAG laser and grazing-incidence amplifier[J].Chinese Journal of Lasers,2013,40(6):0602003.于真真,侯霞,周群立,等.垂直腔面发射激光器抽运小型宽温Nd∶YAG激光器及掠入射式放大器的研究[J].中国激光,2013,40(6):0602003.
[48] Chen S L,Zhang X,Jiang J,et al.VCSEL sidepumped all solid-state lasers[J].Chinese Journal of Lasers,2018,45(10):1001001.陈思露,张鑫,蒋静,等.VCSEL侧面抽运的全固态激光器[J].中国激光,2018,45(10):1001001.
[49] Bai J R,Liu Y,Zhong C Y,et al.Narrow pulse width lasers operating over wide range of low temperature[J].Chinese Journal of Lasers,2019,46(1):0101004.白家荣,刘源,钟朝阳,等.可低温工作的窄脉冲宽温激光器[J].中国激光,2019,46(1):0101004.
[50] Tsunekane M, Taira T. Compact and wide temperature acceptance of VCSEL-pumped microlaser for laser ignition[C]∥Advanced Solid-State Lasers Congress,October 27-November 1,2013,Paris,France. Washington D.C.:OSA,2013:ATu3A.58.