金属离子掺杂全无机铅卤钙钛矿CsPbX_3纳米晶
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摘要
无机铅卤钙钛矿CsPbX_3(X=Cl、Br、I或混合卤素)半导体纳米晶具有优异的光学和光电特性,是构筑照明、显示、光探测和光伏等多种光电器件颇有潜力的核心材料.这类材料在应用中存在的主要问题是如何协同调控或改善性能、提升稳定性并降低有毒铅的量. Pb~(2+)所在格位在决定其电子结构乃至光学和光电性能方面起着重要的作用.因此,最理想的方法是在Pb~(2+)的格位上有效且可控掺杂合适的金属离子.近年来,许多工作报道了CsPbX_3纳米晶的金属离子掺杂特性研究.为了更好地了解掺杂机制,未来开发出性能更优异的掺杂型钙钛矿材料,本文从掺杂离子、驱动力、掺杂策略及掺杂机理4个方面,分别总结了掺杂金属离子的种类及对光学和光电性能的影响,分析了掺杂剂中的阴离子和驱动力的作用,概述了主要的掺杂策略,系统阐述了后合成掺杂机理的核心思想,并指出了它们的不足之处,最后展望了今后在有效可控掺杂研究方面的一些挑战.
Fully inorganic lead trihalide perovskite CsPbX_3 nanocrystals(NCs) have attracted significant attention over the past three years owing to excellent optical and optoelectronic properties, facile synthesis processes, and great potentials for a broad range of applications. As a new class of superstar semiconductors, CsPbX_3 NCs are essential materials for novel lighting, display, photodetector and photovoltaics devices. The simultaneous realization of property control, improving stability and reducing the content of toxic lead remains open questions. Pb~(2+)-site of CsPbX_3 host lattices is of extreme importance to determine its optoelectronic properties. Hence, introducing proper ions in Pb~(2+)-site via an effective and controllable strategy is the best way to solve these problems. In this review, we overview recent progress in understanding and controlling the doping of CsPbX_3 NCs. Firstly, the effects of metal ions doping on its optical and electrical properties are summarized. Then, the roles of anions of dopant and driving forces in dopant incorporation are discussed. In addition, various post-synthetic doping techniques and related mechanisms are highlighted. Finally, we provide suggestions for further research and potential development of doped-CsPbX3 NCs in the future.
Fully inorganic lead trihalide perovskite CsPbX_3 nanocrystals(NCs) have attracted significant attention over the past three years owing to excellent optical and optoelectronic properties, facile synthesis processes, and great potentials for a broad range of applications. As a new class of superstar semiconductors, CsPbX_3 NCs are essential materials for novel lighting, display, photodetector and photovoltaics devices. The simultaneous realization of property control, improving stability and reducing the content of toxic lead remains open questions. Pb~(2+)-site of CsPbX_3 host lattices is of extreme importance to determine its optoelectronic properties. Hence, introducing proper ions in Pb~(2+)-site via an effective and controllable strategy is the best way to solve these problems. In this review, we overview recent progress in understanding and controlling the doping of CsPbX_3 NCs. Firstly, the effects of metal ions doping on its optical and electrical properties are summarized. Then, the roles of anions of dopant and driving forces in dopant incorporation are discussed. In addition, various post-synthetic doping techniques and related mechanisms are highlighted. Finally, we provide suggestions for further research and potential development of doped-CsPbX3 NCs in the future.
引文
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