Ka波段高功率放大器设计
摘要
介绍了一种具有高输出功率的功率放大器,设计利用的是两路伪差分电路结构,每一条支路都由两级电路构成,第一级电路为驱动级电路,第二级电路为功率级电路。电路的匹配网络由传输线和电容构成,以保证信号能够高效率地传输。用威尔金森功分器将两支路结合在一起,通过调试功率分配器使整体电路到达最优化。功率放大器属于AB类放大器,采用0.13um Si Ge Bi CMOS工艺,在中心频率30GHz时得到整体电路后仿真结果:输出1dB压缩点OP1dB=22.91dBm,功率增益GP=25.52dB。
引文
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[3]Chéron J,Campovecchio M,QuéréR,et al.High-gain over30%PAE power amplifier MMICs in 100 nm Ga N technology at Ka-band frequencies[C].Microwave Integrated Circuits Conference.IEEE,2016:262-264.
[4]Chappidi C R,Sengupta K.20.2 A frequency-reconfigurable mm-Wave power amplifier with active-impedance synthesis in an asymmetrical non-isolated combiner[C]. IEEE International SolidState Circuits Conference.IEEE,2016:344-345.
[5]Xia J,Chung A,Boumaiza S.A wideband millimeter-wave differential stacked-FET power amplifier with 17. 3 d Bm output power and 25%PAE in 45nm SOI CMOS[C].Microwave Symposium.IEEE,2017:1691-1694.
[6]Shakib S,Park H C,Dunworth J,et al.A Highly Efficient and Linear Power Amplifier for 28-GHz 5G Phased Array Radios in28-nm CMOS[J]. IEEE Journal of Solid-State Circuits,2016,51(12):3020-3036.
[7]Mortazavi S Y,Koh K J.A 28-GHz inverse class-F power amplifier with coupled-inductor based harmonic impedance modulator[C].Custom Integrated Circuits Conference. IEEE,2015:1-4.
[8]Liu G. A fully integrated 0.18μm Si Ge Bi CMOS power amplifier[C].IEEE,International Conference on Asic. IEEE,2016:1-4.
[9]Pan R,Gu J,Yeo K S,et al. Si Ge Bi CMOS power amplifiers for 60GHz ISM band applications[C].Soc Design Conference.IEEE,2012:13-16.
[10]Hung C C,Kuo J L,Lin K Y,et al.A 22.5-dB gain,20.1-d Bm output power K-band power amplifier in 0.18-μm CMOS[C].Radio Frequency Integrated Circuits Symposium. IEEE,2010:557-560.