退火氧分压对AZO薄膜的透光和导电性能的影响
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摘要
在室温下采用射频磁控溅射粉末靶在玻璃基底上制备掺铝氧化锌(AZO)薄膜,采用扫描电镜、X射线衍射仪、紫外可见分光光度计和霍尔效应仪等手段表征和分析了薄膜的微观结构和光电性能,研究了退火氧分压对薄膜光电性能的影响。结果表明:退火后的AZO薄膜仍具有c轴择优取向的六方纤锌矿结构,薄膜的表面致密光滑;随着退火氧分压的降低AZO薄膜光学带隙变窄、透光率有所降低,但是其值均高于80%;随着退火氧分压的降低载流子浓度显著升高,电导特性明显改善,电阻率最低达到2.1×10~(-3)Ω·cm。
The transparent conductive films aluminum doped zinc oxide(AZO) was prepared on a glass substrate by RF magnetron sputtering from powder targets. AZO films were annealed by controlling the temperature and oxygen partial pressure. The morphology and microstructure,as well as the optical and electrical properties of the as-deposited and annealed films were characterized by Scanning electron microscope(SEM),X-ray diffraction(XRD),UV-visible Spectrophotometer and the Hall-effect measurement. The results show that annealed AZO film keep a(002) preferred orientation hexagonal wurtzite structure, and the smooth and compact surface. With the decrease of annealing oxygen partial pressure the optical band gap becomes narrow, and the transmittance of AZO films decreases slightly but still above 80%. As the annealing oxygen partial pressure decreases, the electrical conductivity of AZO films is significantly improved with evident increase of charge carrier concentration. The resistivity is reduced to 2.1×10~(-3)Ω· cm.
The transparent conductive films aluminum doped zinc oxide(AZO) was prepared on a glass substrate by RF magnetron sputtering from powder targets. AZO films were annealed by controlling the temperature and oxygen partial pressure. The morphology and microstructure,as well as the optical and electrical properties of the as-deposited and annealed films were characterized by Scanning electron microscope(SEM),X-ray diffraction(XRD),UV-visible Spectrophotometer and the Hall-effect measurement. The results show that annealed AZO film keep a(002) preferred orientation hexagonal wurtzite structure, and the smooth and compact surface. With the decrease of annealing oxygen partial pressure the optical band gap becomes narrow, and the transmittance of AZO films decreases slightly but still above 80%. As the annealing oxygen partial pressure decreases, the electrical conductivity of AZO films is significantly improved with evident increase of charge carrier concentration. The resistivity is reduced to 2.1×10~(-3)Ω· cm.
引文
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[9] Huang W H, Zhong G W, Su L P, et al. The Properties of the AlDoped ZnO Thin Film Prepared by Magnetron Sputtering[J]. Applied Mechanics and Materials, 2013, 341-342:237
[10] Prepelita P, Craciun V, Garoi F, et al. Effect of annealing treatment on the structural and optical properties of AZO samples[J]. Appl.Surf. Sci., 2015, 352:23
[11] Yu G, Zhao M, Lv A J. Effects of oxygen-argon ratio and annealing temperature on the structure and properties of AZO thin films[J]. Journal of Beijing Institute of Petro-Chemical Technology, 2017, 25(2):1(于舸,赵曼,吕爱君.氧氩比和退火温度对AZO薄膜结构与性能的影响[J].北京石油化工学院学报, 2017, 25(2):1)
[12] Guo D Y, Ju Y, Fu C J, et al.(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method[J]. Materials Science-Poland, 2016, 34(3):555
[13] Oh J H, Kim K K, Seong T Y. Effects of deposition temperatures and annealing conditions on the microstructural, electrical and optical properties of polycrystalline Al-doped ZnO thin films[J]. Appl. Surf. Sci., 2011, 257:2731
[14] Hwang Y, Kim H, Um Y, et al. Structural, electrical, and ellipsometric properties of nitrogen-annealed ZnO:Al films[J]. Curr. Appl. Phys., 2012, 12:576
[15] Gürbüz O, Kurt?,?al??kan S, et al. Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films[J]. Appl. Surf. Sci.,2015, 349:549
[2] Sun Y H, Wang H L, Chen J, Fang L, Wang L. Structural and optoelectronic properties of AZO thin films prepared by RF magnetron sputtering at room temperature[J]. Trans. Nonferrous Met. Soc.China, 2016, 26(6):1655
[3] Cheng J Y, Cao G H, Zong H T, et al. Highly transparent conductive AZO/Zr50Cu50/AZO films in wide range of visible and near infrared wavelength grown by pulsed laser deposition[J]. Results in Physics, 2017, 7:910
[4] Shirahata T, Kawaharamura T, Fujita S, et al. Transparent conductive zinc-oxide-based films grown at low temperature by mist chemical vapor deposition[J]. Thin Solid Films, 2015, 597:30
[5] Inamdar S, Ganbavle V, Shaikh S, et al. Effect of the buffer layer on the metal-semiconductor-metal UV photodetector based on Al-doped and undoped ZnO thin films with different device structures[J].Phys. Status Solidi A, 2015, 212(8):1704
[6] Tabassum S, Yamasue E, Okumura H, et al. Ishihara. Electrical stability of Al-doped ZnO transparent electrode prepared by sol-gel method[J]. Appl. Surf. Sci., 2016, 377:355
[7] Zhang J X, Cao C B, Zhu H S. The crystal structure and photoresponse of ZnO Thin Films fabricated on ITO substrates[J].Chinese journal of Materials Research, 2007, 21(3):235(张金星,曹传宝,朱鹤荪. ITO上磁控溅射ZnO薄膜及其光电性质[J].材料研究学报, 2007, 21(3):235)
[8] Kelly P J, Zhou Y W. Zinc oxide-based transparent conductive oxide films prepared by pulsed magnetron sputtering from powder targets:process features and film properties[J]. J. Vac. Sci. Technol., A, 2006, 24(5):1782
[9] Huang W H, Zhong G W, Su L P, et al. The Properties of the AlDoped ZnO Thin Film Prepared by Magnetron Sputtering[J]. Applied Mechanics and Materials, 2013, 341-342:237
[10] Prepelita P, Craciun V, Garoi F, et al. Effect of annealing treatment on the structural and optical properties of AZO samples[J]. Appl.Surf. Sci., 2015, 352:23
[11] Yu G, Zhao M, Lv A J. Effects of oxygen-argon ratio and annealing temperature on the structure and properties of AZO thin films[J]. Journal of Beijing Institute of Petro-Chemical Technology, 2017, 25(2):1(于舸,赵曼,吕爱君.氧氩比和退火温度对AZO薄膜结构与性能的影响[J].北京石油化工学院学报, 2017, 25(2):1)
[12] Guo D Y, Ju Y, Fu C J, et al.(0 0 2)-oriented growth and morphologies of ZnO thin films prepared by sol-gel method[J]. Materials Science-Poland, 2016, 34(3):555
[13] Oh J H, Kim K K, Seong T Y. Effects of deposition temperatures and annealing conditions on the microstructural, electrical and optical properties of polycrystalline Al-doped ZnO thin films[J]. Appl. Surf. Sci., 2011, 257:2731
[14] Hwang Y, Kim H, Um Y, et al. Structural, electrical, and ellipsometric properties of nitrogen-annealed ZnO:Al films[J]. Curr. Appl. Phys., 2012, 12:576
[15] Gürbüz O, Kurt?,?al??kan S, et al. Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films[J]. Appl. Surf. Sci.,2015, 349:549