Si和SiC功率器件结温提取技术现状及展望
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摘要
对功率半导体器件结温的在线准确提取是实现器件智能控制、性能评估、主动热管理、健康状态评估及优化器件寿命等的重要基础。本文梳理了现有基于温敏参数的Si(硅)和SiC(碳化硅)功率器件结温提取方法的机理和主要特点,从灵敏度、测量频率、侵入性和线性度等指标对已有方法进行了性能评估。在此基础上,结合SiC JFET(结型场效应晶体管)器件的温度特性,提出一种新颖的基于栅-源极间寄生PN结击穿电压的SiC JFET器件非侵入性在线结温提取方法,仿真结果证明了所提出方法的正确性和有效性。
Accurate online extraction of junction temperature for power semiconductor devices is essential for intelligent switching control, performance evaluation, active thermal management, health assessment and device lifetime optimization. The main contribution of this paper is to thoroughly review the extraction theory and main features of the existing junction temperature extraction methods for Si and SiC devices. Furthermore, these methods were evaluated and compared from the criteria of sensitivity, measuring frequency, virulence and linearity. Then, together with the investigation of temperature characteristics of SiC JFET devices, a novel non-invasive junction temperature extraction method was proposed based on the gate reverse breakdown voltage of SiC JFET devices. The simulation results verified the correctness and effectiveness of the proposed method.
Accurate online extraction of junction temperature for power semiconductor devices is essential for intelligent switching control, performance evaluation, active thermal management, health assessment and device lifetime optimization. The main contribution of this paper is to thoroughly review the extraction theory and main features of the existing junction temperature extraction methods for Si and SiC devices. Furthermore, these methods were evaluated and compared from the criteria of sensitivity, measuring frequency, virulence and linearity. Then, together with the investigation of temperature characteristics of SiC JFET devices, a novel non-invasive junction temperature extraction method was proposed based on the gate reverse breakdown voltage of SiC JFET devices. The simulation results verified the correctness and effectiveness of the proposed method.
引文
[1]Yang Shaoyong,Bryant A,Mawby P,et al.An industry based survey of reliability in power electronic converters[J].IEEE Transactions on Industry Applications,2011,47(3):1441-1451.
[2]黄涛,陈民铀,赖伟,等.计及疲劳累积及健康状态的风电变流器可靠性评估模型[J].电工技术学报,2018,33(20):4845-4854.Huang Tao,Chen Minyou,Lai Wei,et al.Reliability evaluation model of wind power converter considering fatigue accumulation and health status[J].Transactions of China Electrotechnical Society,2018,33(20):4845-4854.
[3]王春雷,郑利兵,方化潮,等.键合线失效对于IGBT模块性能的影响分析[J].电工技术学报,2014,29(1):184-191.Wang chunlei,Zheng Libing,Fang Huachao,et al.Analysis of the performance effect with bonding wires lift-off in IGBT modules[J].Transactions of China Electrotechnical Society,2014,29(1):184-191.
[4]汪波,罗毅飞,张烁,等.IGBT极限功耗与热失效机理分析[J].电工技术学报,2016,31(12):135-141.Wang Bo,Luo Yifei,Zhang Shuo,et al.Analysis of limiting power dissipation and thermal failure mechanism[J].Transactions of China Electrotechnical Society,2016,31(12):135-141.
[5]李亚萍,周雒维,孙鹏菊,等.基于特定集电极电流下饱和压降的IGBT模块老化失效状态监测方法[J].电工技术学报,2018,33(14):3202-3212.Li Yaping,Zhou Luowei,Sun Pengju,et al.Condition monitoring for IGBT module aging failure on VCE(on)under certain IC conditions[J].Transactions of China Electrotechnical Society,2018,33(14):3202-3212.
[6]唐勇,汪波,陈明,等.高温下的IGBT可靠性与在线评估[J].电工技术学报,2014,29(6):17-23.Tang Yong,Wang Bo,Chen Ming,et al.Reliability and on-line evaluation of IGBT modules under high temperature[J].Transactions of China Electrotechnical Society,2014,29(6):17-23.
[7]赖伟,陈民铀,冉立,等.老化实验条件下的IGBT寿命预测模型[J].电工技术学报,2016,31(24):173-180.Lai Wei,Chen Minyou,Ran Li,et al.IGBT lifetime model based on aging experiment[J].Transactions of China Electrotechnical Society,2016,31(24):173-180.
[8]Bruckner T,Bernet S.Estimation and measurement of junction temperatures in a three-level voltage source converter[J].IEEE Transactions on Power Electronics,2007,22(1):3-12.
[9]魏克新,杜明星.基于集总参数法的IGBT模块温度预测模型[J].电工技术学报,2011,26(12):79-84.Wei Kexin,Du Mingxing.Temperature prediction model of IGBT modules based on lumped parameters method[J].Transactions of China Electrotechnical Society,2011,26(12):79-84.
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[14]李武华,陈玉香,罗皓泽,等.大容量电力电子器件结温提取原理综述及展望[J].中国电机工程学报,2016,36(13):3546-3557.Li Wuhua,Chen Yuxiang,Luo Haoze,et al.Review and prospect of junction temperature extraction principle of high power semiconductor devices[J].Proceedings of the CSEE,2016,36(13):3546-3557.
[15]杨旭,周雒维,杜雄,等.绝缘栅极型晶体管结温测量方法及其发展[J].电测与仪表,2012,49(554):7-12.Yang Xu,Zhou Luowei,Du Xiong,et al.Review of isolated gate bipolar transistor’s junction temperature measurement[J].Electrical Measurement&Instrumentation,2012,49(554):7-12.
[16]He Niu,Lorenz R D.Sensing power MOSFETjunction temperature using circuit output current ringing decay[J].IEEE Transactions on Industry Applications,2015,51(2):1763-1773.
[17]Yuan Zhang,Yung C L.A simple approach on junction temperature estimation for SiC MOSFETdynamic operation within safe operating area[C]//IEEE Conversion Congress and Exposition,2015,5704-5707.
[18]Perpina X,Serviere J F,Saiz J,et al.Temperature measurement on series resistance and device in power packs based on on-state voltage drop monitoring at high current[J].Microelectronics Reliability,2006,46(9):1506-1510.
[19]Jonathan N D,David A S,Martin P F,et al.Measurement and characterization technique for realtime die temperature prediction of MOSFET-based power electronics[J].IEEE Transactions on Power Electronics,2016,31(6):4378-4388.
[20]Nick B,Laurent D,Stig M,et al.IR camera validation of IGBT junction temperature measurement via peak gate current[J].IEEE Transactions on Power Electronics,2017,32(4):3099-3111.
[21]Yong S K,Seung K S.On-line estimation of IGBTjunction temperature using on-state voltage drop[C]//Conference Record of 1998 IEEE Industry Applications Conference,Thirty-Third IAS Annual Meeting,St.Louis,MO,USA,1998,2:853-859.
[22]Xu Zhuxian,Xu Fan,Wang Fei.Junction temperature measurement of IGBTs using short-circuit current as a temperature-sensitive electrical parameter for converter prototype evaluation[J].IEEE Transactions on Industry Electronics,2015,62(6):3419-3429.
[23]Bernhard U,Alex M.Temperature estimation for wire bonding in power semiconductor devices[C]//18th European Conference on Power Electronics and Applications,Karlsruhe,Germany,2016:1-6.
[24]Laurent D,Yvan A.Preliminary evaluation of thermosensitive electrical parameters based on the forward voltage for online chip temperature measurements of IGBT devices[J].IEEE Transactions on Industry Application,2015,51(6):4688-4698.
[25]Chen Huifeng,Ji Bing,Volker Pickert,et al.Realtime temperature estimation for power MOSFETs considering thermal aging effects[J].IEEE Transactions on Devices and Material Reliability,2014,14(1):220-228.
[26]Ren Lei,Shen Qian,Gong Chunying.Real-time aging monitoring for power MOSFETS using threshold voltage[C]//IECON 2016 42nd Annual Conference of the IEEE Industrial Electronics Society,Florence,Italy,2016:441-446.
[27]Bahun I,Cobanov N,Jakopovic Z.Real-time measurement of IGBT’s operating temperature[J].Automatika Journal for Control Measurement E,2011,52(4):295-305.
[28]Sundaramoorthy V,Bianda E,Bloch R,et al.Online estimation of IGBT junction temperature(Tj)using gate-emitter voltage(Vge)at turn-off[C]//2013 15th European Conference on Power Electronics and Application,Lille,France,2013:1-10.
[29]Harald K,Axel M.On-line junction temperature measurement of IGBTs based sensitive electrical parameters[C]//2009 13th European Conference on Power Electronica and Applications,Barcelona,Spain,2009:1-5.
[30]Li Lei,Ning Puqi,Wen Xuhui,et al.A turn-off delay time measurement and junction temperature estimation method for IGBT[C]//2017 IEEE Applied Power Electronics Conference and Exposition,Tampa,FL,USA,2017:2290-2296.
[31]Barlini D,Ciappa M,Mermet-Guyennet M,et al.Measurement of the transient junction temperature in MOSFET devices under operation conditions[J].Microelectronics Reliability,2007,47(9-11):1707-1712.
[32]Sun Pengfei,Luo Haoze,Dong Yufei,et al.Online junction temperature extraction with turn-off delay time for high power IGBTs[C]//2014 IEEE Energy Conversion Congress and Exposition,Pittsburgh,PA,USA,2014:4016-4021.
[33]He Niu,Lorenz R D.Sensing power MOSFETjunction temperature using gate drive turn-on current transient properties[J].IEEE Transactions on Power Electronics,2016,52(2):1677-1687.
[34]He Niu,Lorenz R D.Sensing IGBT junction temperature using gate drive transient properties[C]//2015 Applied Power Electronics Conference and Exposition,Charlotte,NC,USA,2015:2492-2499.
[35]Angus B,Shaoyong Y,Philip M,et al.Investigation into IGBT dv/dt during turn-off and its temperature dependence[J].IEEE Transactions on Power Electronics,2011,26(10):3019-3031.
[36]刘宾礼,唐勇,罗毅飞,等.基于电压变化率的IGBT结温预测模型研究[J].物理学报,2014,63(17):1-10.Liu Binli,Tang Yong,Luo Yifei,et al.Investigation of the prediction model of IGBT junction temperature based on the rate of voltage change[J].Acta Physica Sinica,2014,63(17):1-10.
[37]Nick B,Marco L,Laurent D,et al.Improved Reliability of power modules:A review of online junction temperature measurement methods[J]IEEEIndustry Electronics Magazines,2014,8(3):17-27.
[38]Chen Y X,Luo Haoze,Li Wuhua,et al.A thermosensitive electrical parameter with maximum dic/dt during turn-off for high power trench/field-stop IGBTmodules[C]//2016 IEEE Applied Electronics Conference and Exposition,Long Beach,CA,USA,2016:499-504.
[39]Luo Haoze,Li Wuhua,He Xiangning.Online highpower P-i-N diode chip temperature extraction and prediction method with maximum recovery current di/dt[J].IEEE Transaction on Power Electronics,2015,30(5):2395-2404.
[40]Serkan D,Hamit D,Bilal A.Remaining useful lifetime estimation for thermally stressed power MOSFETs based on on-state resistance variation[J].IEEE Transactions on Industry Applications,2016,52(3):2554-2563.
[41]Laurent D,Y van A,Pierre-Olivier J.Comparison of junction temperature evaluations in a power IGBTmodule using an IR camera and three thermosensitive electrical parameters[J].IEEE Transactions on Industry Application,2013,49(4):1599-1608.
[42]Hamada K,Nagao M,Ajioka M,et al.SiC-emerging power device technology for next-generation electrically powered environmentally friendly vehicles.IEEE Transactions on Electron Devices,2015,62(2):278-285.
[43]Yvan A,Laurent D,Zoubir K.Temperature measurement of power semiconductor devices by thermosensitive electrical parameters-a review[J].IEEETransaction on Power Electronics,2012,27(6):3081-3092.
[44]Salah B,Tarek K Sofiane,et al.Characterization,modeling and design parameters identification of silicon carbide junction field effect transistor for temperature sensor applications[J].Sensors,2010,10(1):388-399.
[45]Nowak M,Rabkowski J,Barlik R.Measurement of temperature sensitive parameter characteristics of semiconductor silicon and silicon carbide power devices[C]//2008 13th International Power Electronics and Motion Control Conference,Poznan,Poland,2008:84-87.
[46]Zhang Zheyu,Fred Wang,Daniel J C,et al.Online junction temperature monitoring using turn-off delay time for silicon carbide power devices[C]//2016 IEEEEnergy Conversion Congress and Exposition,Milwaukee,WI,USA,2016:1-7.
[47]Jose O,Olayiwola A,Ji Hu,et al.An investigation of temperature-sensitive electrical parameters for SiCpower MOSFETs[J].IEEE Transactions on Power Electronics,2017,32(10):7954-7966.
[48]Cyril B,Remy O,Herve M,et al.Thermal stability of silicon carbide power JFETs[J].IEEE Transactions on Electron Devices,2013,60(12):4191-4198.
[49]王莉娜,邓洁,Muhammad Ali.两种考虑温度影响的SiC JFET仿真模型[J].中国电机工程学报,2018,38(2):562-572.Wang Lina,Deng Jie,Muhammad Ali.Two SiC JFETsimulation model considering temperature influence[J].Proceeding of the CSEE,2018,38(2):562-572.
[2]黄涛,陈民铀,赖伟,等.计及疲劳累积及健康状态的风电变流器可靠性评估模型[J].电工技术学报,2018,33(20):4845-4854.Huang Tao,Chen Minyou,Lai Wei,et al.Reliability evaluation model of wind power converter considering fatigue accumulation and health status[J].Transactions of China Electrotechnical Society,2018,33(20):4845-4854.
[3]王春雷,郑利兵,方化潮,等.键合线失效对于IGBT模块性能的影响分析[J].电工技术学报,2014,29(1):184-191.Wang chunlei,Zheng Libing,Fang Huachao,et al.Analysis of the performance effect with bonding wires lift-off in IGBT modules[J].Transactions of China Electrotechnical Society,2014,29(1):184-191.
[4]汪波,罗毅飞,张烁,等.IGBT极限功耗与热失效机理分析[J].电工技术学报,2016,31(12):135-141.Wang Bo,Luo Yifei,Zhang Shuo,et al.Analysis of limiting power dissipation and thermal failure mechanism[J].Transactions of China Electrotechnical Society,2016,31(12):135-141.
[5]李亚萍,周雒维,孙鹏菊,等.基于特定集电极电流下饱和压降的IGBT模块老化失效状态监测方法[J].电工技术学报,2018,33(14):3202-3212.Li Yaping,Zhou Luowei,Sun Pengju,et al.Condition monitoring for IGBT module aging failure on VCE(on)under certain IC conditions[J].Transactions of China Electrotechnical Society,2018,33(14):3202-3212.
[6]唐勇,汪波,陈明,等.高温下的IGBT可靠性与在线评估[J].电工技术学报,2014,29(6):17-23.Tang Yong,Wang Bo,Chen Ming,et al.Reliability and on-line evaluation of IGBT modules under high temperature[J].Transactions of China Electrotechnical Society,2014,29(6):17-23.
[7]赖伟,陈民铀,冉立,等.老化实验条件下的IGBT寿命预测模型[J].电工技术学报,2016,31(24):173-180.Lai Wei,Chen Minyou,Ran Li,et al.IGBT lifetime model based on aging experiment[J].Transactions of China Electrotechnical Society,2016,31(24):173-180.
[8]Bruckner T,Bernet S.Estimation and measurement of junction temperatures in a three-level voltage source converter[J].IEEE Transactions on Power Electronics,2007,22(1):3-12.
[9]魏克新,杜明星.基于集总参数法的IGBT模块温度预测模型[J].电工技术学报,2011,26(12):79-84.Wei Kexin,Du Mingxing.Temperature prediction model of IGBT modules based on lumped parameters method[J].Transactions of China Electrotechnical Society,2011,26(12):79-84.
[10]周雒维,吴军科,杜雄,等.功率变流器的可靠性研究现状及展望[J].电源学报,2013(1):2-15.Zhou Luowei,Wu Junke,Du Xiong,et al.Status and outlook of power converter’s reliability research[J].Journal of Power Supply,2013(1):2-15.
[11]彭英舟,周雒维,张晏铭,等.基于键合线等效电阻的IGBT模块老化失效研究[J].电工技术学报,2017,32(20):117-132.Peng Yingzhou,Zhou Luowei,Zhang Yanming,et al.Study of IGBT module aging failure base on bond wire equivalent resistance[J].Transactions of China Electrotechnical Society,2017,32(20):117-132.
[12]李辉,刘盛权,冉立,等.大功率并网风电机组变流器状态监测技术综述[J].电工技术学报,2016,31(8):1-10.Li Hui,Liu Shengquan,Ran Li,et al.Overview of condition monitoring technologies of power converter for high power grid-connected wind turbine generator system[J].Transactions of China Electrotechnical Society,2016,31(8):1-10.
[13]Wu T,Castellazzi A.Temperature adaptive IGBTgate-driver design[C]//Proceedings of the 2011 14th European Conference on Power Electronics and Applications,Birmingham,UK,2011:1-3.
[14]李武华,陈玉香,罗皓泽,等.大容量电力电子器件结温提取原理综述及展望[J].中国电机工程学报,2016,36(13):3546-3557.Li Wuhua,Chen Yuxiang,Luo Haoze,et al.Review and prospect of junction temperature extraction principle of high power semiconductor devices[J].Proceedings of the CSEE,2016,36(13):3546-3557.
[15]杨旭,周雒维,杜雄,等.绝缘栅极型晶体管结温测量方法及其发展[J].电测与仪表,2012,49(554):7-12.Yang Xu,Zhou Luowei,Du Xiong,et al.Review of isolated gate bipolar transistor’s junction temperature measurement[J].Electrical Measurement&Instrumentation,2012,49(554):7-12.
[16]He Niu,Lorenz R D.Sensing power MOSFETjunction temperature using circuit output current ringing decay[J].IEEE Transactions on Industry Applications,2015,51(2):1763-1773.
[17]Yuan Zhang,Yung C L.A simple approach on junction temperature estimation for SiC MOSFETdynamic operation within safe operating area[C]//IEEE Conversion Congress and Exposition,2015,5704-5707.
[18]Perpina X,Serviere J F,Saiz J,et al.Temperature measurement on series resistance and device in power packs based on on-state voltage drop monitoring at high current[J].Microelectronics Reliability,2006,46(9):1506-1510.
[19]Jonathan N D,David A S,Martin P F,et al.Measurement and characterization technique for realtime die temperature prediction of MOSFET-based power electronics[J].IEEE Transactions on Power Electronics,2016,31(6):4378-4388.
[20]Nick B,Laurent D,Stig M,et al.IR camera validation of IGBT junction temperature measurement via peak gate current[J].IEEE Transactions on Power Electronics,2017,32(4):3099-3111.
[21]Yong S K,Seung K S.On-line estimation of IGBTjunction temperature using on-state voltage drop[C]//Conference Record of 1998 IEEE Industry Applications Conference,Thirty-Third IAS Annual Meeting,St.Louis,MO,USA,1998,2:853-859.
[22]Xu Zhuxian,Xu Fan,Wang Fei.Junction temperature measurement of IGBTs using short-circuit current as a temperature-sensitive electrical parameter for converter prototype evaluation[J].IEEE Transactions on Industry Electronics,2015,62(6):3419-3429.
[23]Bernhard U,Alex M.Temperature estimation for wire bonding in power semiconductor devices[C]//18th European Conference on Power Electronics and Applications,Karlsruhe,Germany,2016:1-6.
[24]Laurent D,Yvan A.Preliminary evaluation of thermosensitive electrical parameters based on the forward voltage for online chip temperature measurements of IGBT devices[J].IEEE Transactions on Industry Application,2015,51(6):4688-4698.
[25]Chen Huifeng,Ji Bing,Volker Pickert,et al.Realtime temperature estimation for power MOSFETs considering thermal aging effects[J].IEEE Transactions on Devices and Material Reliability,2014,14(1):220-228.
[26]Ren Lei,Shen Qian,Gong Chunying.Real-time aging monitoring for power MOSFETS using threshold voltage[C]//IECON 2016 42nd Annual Conference of the IEEE Industrial Electronics Society,Florence,Italy,2016:441-446.
[27]Bahun I,Cobanov N,Jakopovic Z.Real-time measurement of IGBT’s operating temperature[J].Automatika Journal for Control Measurement E,2011,52(4):295-305.
[28]Sundaramoorthy V,Bianda E,Bloch R,et al.Online estimation of IGBT junction temperature(Tj)using gate-emitter voltage(Vge)at turn-off[C]//2013 15th European Conference on Power Electronics and Application,Lille,France,2013:1-10.
[29]Harald K,Axel M.On-line junction temperature measurement of IGBTs based sensitive electrical parameters[C]//2009 13th European Conference on Power Electronica and Applications,Barcelona,Spain,2009:1-5.
[30]Li Lei,Ning Puqi,Wen Xuhui,et al.A turn-off delay time measurement and junction temperature estimation method for IGBT[C]//2017 IEEE Applied Power Electronics Conference and Exposition,Tampa,FL,USA,2017:2290-2296.
[31]Barlini D,Ciappa M,Mermet-Guyennet M,et al.Measurement of the transient junction temperature in MOSFET devices under operation conditions[J].Microelectronics Reliability,2007,47(9-11):1707-1712.
[32]Sun Pengfei,Luo Haoze,Dong Yufei,et al.Online junction temperature extraction with turn-off delay time for high power IGBTs[C]//2014 IEEE Energy Conversion Congress and Exposition,Pittsburgh,PA,USA,2014:4016-4021.
[33]He Niu,Lorenz R D.Sensing power MOSFETjunction temperature using gate drive turn-on current transient properties[J].IEEE Transactions on Power Electronics,2016,52(2):1677-1687.
[34]He Niu,Lorenz R D.Sensing IGBT junction temperature using gate drive transient properties[C]//2015 Applied Power Electronics Conference and Exposition,Charlotte,NC,USA,2015:2492-2499.
[35]Angus B,Shaoyong Y,Philip M,et al.Investigation into IGBT dv/dt during turn-off and its temperature dependence[J].IEEE Transactions on Power Electronics,2011,26(10):3019-3031.
[36]刘宾礼,唐勇,罗毅飞,等.基于电压变化率的IGBT结温预测模型研究[J].物理学报,2014,63(17):1-10.Liu Binli,Tang Yong,Luo Yifei,et al.Investigation of the prediction model of IGBT junction temperature based on the rate of voltage change[J].Acta Physica Sinica,2014,63(17):1-10.
[37]Nick B,Marco L,Laurent D,et al.Improved Reliability of power modules:A review of online junction temperature measurement methods[J]IEEEIndustry Electronics Magazines,2014,8(3):17-27.
[38]Chen Y X,Luo Haoze,Li Wuhua,et al.A thermosensitive electrical parameter with maximum dic/dt during turn-off for high power trench/field-stop IGBTmodules[C]//2016 IEEE Applied Electronics Conference and Exposition,Long Beach,CA,USA,2016:499-504.
[39]Luo Haoze,Li Wuhua,He Xiangning.Online highpower P-i-N diode chip temperature extraction and prediction method with maximum recovery current di/dt[J].IEEE Transaction on Power Electronics,2015,30(5):2395-2404.
[40]Serkan D,Hamit D,Bilal A.Remaining useful lifetime estimation for thermally stressed power MOSFETs based on on-state resistance variation[J].IEEE Transactions on Industry Applications,2016,52(3):2554-2563.
[41]Laurent D,Y van A,Pierre-Olivier J.Comparison of junction temperature evaluations in a power IGBTmodule using an IR camera and three thermosensitive electrical parameters[J].IEEE Transactions on Industry Application,2013,49(4):1599-1608.
[42]Hamada K,Nagao M,Ajioka M,et al.SiC-emerging power device technology for next-generation electrically powered environmentally friendly vehicles.IEEE Transactions on Electron Devices,2015,62(2):278-285.
[43]Yvan A,Laurent D,Zoubir K.Temperature measurement of power semiconductor devices by thermosensitive electrical parameters-a review[J].IEEETransaction on Power Electronics,2012,27(6):3081-3092.
[44]Salah B,Tarek K Sofiane,et al.Characterization,modeling and design parameters identification of silicon carbide junction field effect transistor for temperature sensor applications[J].Sensors,2010,10(1):388-399.
[45]Nowak M,Rabkowski J,Barlik R.Measurement of temperature sensitive parameter characteristics of semiconductor silicon and silicon carbide power devices[C]//2008 13th International Power Electronics and Motion Control Conference,Poznan,Poland,2008:84-87.
[46]Zhang Zheyu,Fred Wang,Daniel J C,et al.Online junction temperature monitoring using turn-off delay time for silicon carbide power devices[C]//2016 IEEEEnergy Conversion Congress and Exposition,Milwaukee,WI,USA,2016:1-7.
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